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HSM4963

Public Made by Adom

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HUASHUO MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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HSM4963

HUASHUO · MOSFETs · SOP-8

HSM4963 from HUASHUO, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of P-channel MOSFET 1; drain-source voltage rated -20 V.
2 G1 input Gate of P-channel MOSFET 1; gate-source voltage limited to ±12 V.
3 S2 passive Source of P-channel MOSFET 2; drain-source voltage rated -20 V.
4 G2 input Gate of P-channel MOSFET 2; gate-source voltage limited to ±12 V.
5 D2 passive Drain of P-channel MOSFET 2; continuous drain current -6 A at TA=25℃, pulsed -24 A.
6 D2 passive Drain of P-channel MOSFET 2, internally common with pin 5; continuous drain current -6 A at TA=25℃.
7 D1 passive Drain of P-channel MOSFET 1; continuous drain current -6 A at TA=25℃, pulsed -24 A.
8 D1 passive Drain of P-channel MOSFET 1, internally common with pin 7; continuous drain current -6 A at TA=25℃.

Key specifications

Parameter Value
Manufacturer HUASHUO
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS -20 V VGS=0V , ID=-250uA 2
Static Drain-Source On-Resistance RDS(ON) 40 55 mΩ VGS=-4.5V , ID=-6A 2
Static Drain-Source On-Resistance RDS(ON) 50 65 mΩ VGS=-2.5V , ID=-5A 2
Gate Threshold Voltage VGS(th) -0.5 -0.85 -1.2 V VGS=VDS , ID =-250uA 2
Drain-Source Leakage Current IDSS -1 uA VDS=-20V , VGS=0V , TJ=25℃ 2
Drain-Source Leakage Current IDSS -5 uA VDS=-20V , VGS=0V , TJ=55℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±12V , VDS=0V 2
Diode Forward Voltage VSD -1.2 V VGS=0V , IS=-1A , TJ=25℃ 2
Drain-Source Voltage VDS -20 V 1
Gate-Source Voltage VGS -12 12 V 1
Continuous Drain Current ID -6 A TA=25℃, -VGS @ -10V 1
Continuous Drain Current ID -5 A TA=70℃, -VGS @ -10V 1
Pulsed Drain Current IDM -24 A 1
Total Power Dissipation PD 2 W TA=25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-Ambient RθJA 110 ℃/W 1
Thermal Resistance Junction-Case RθJC 50 ℃/W 1
VGS(th) Temperature Coefficient △VGS(th) 4.6 mV/℃ 2
Forward Transconductance gfs 5 S VDS=-5V , ID=-4A 2
Total Gate Charge (-4.5V) Qg 8 nC VDS=-10V , VGS=-4.5V , ID=-4A 2
Gate-Source Charge Qgs 2 nC VDS=-10V , VGS=-4.5V , ID=-4A 2
Gate-Drain Charge Qgd 3 nC VDS=-10V , VGS=-4.5V , ID=-4A 2
Turn-On Delay Time Td(on) 12 ns VDD=-10V , VGS=-4.5V , RL=9.1, ID=-6A, RGEN=1 2
Rise Time Tr 36 ns VDD=-10V , VGS=-4.5V , RL=9.1, ID=-6A, RGEN=1 2
Turn-Off Delay Time Td(off) 30 ns VDD=-10V , VGS=-4.5V , RL=9.1, ID=-6A, RGEN=1 2
Fall Time Tf 10 ns VDD=-10V , VGS=-4.5V , RL=9.1, ID=-6A, RGEN=1 2
Input Capacitance Ciss 740 pF VDS=-10V , VGS=0V , f=1MHz 2
Output Capacitance Coss 275 pF VDS=-10V , VGS=0V , f=1MHz 2
Reverse Transfer Capacitance Crss 195 pF VDS=-10V , VGS=0V , f=1MHz 2

CAD (KiCad official)

  • Symbol: HSM4963
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: hsm4963-etched.step / hsm4963-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hsm4963.step / hsm4963.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HUASHUO datasheet (6 pp, sha256 102ce8f7fd3ee29b, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF