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HSM4006

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HUASHUO MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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HSM4006

HUASHUO · MOSFETs · SOP-8

HSM4006 from HUASHUO, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the N-channel MOSFET; the drawing labels this lower-row pin S, and the part is rated VDS 40 V and ID 12 A at TC=25℃.
2 S passive Source of the N-channel MOSFET, shorted externally with the other source pins; the drawing labels this lower-row pin S.
3 S passive Source of the N-channel MOSFET, shorted externally with the other source pins; the drawing labels this lower-row pin S.
4 G input Gate of the N-channel MOSFET with an absolute maximum VGS of ±20 V and a threshold VGS(th) of 1.0 V min to 2.5 V max at ID=250uA.
5 D passive Drain of the N-channel MOSFET, with VDS 40 V max, and the drawing labels this upper-row pin D.
6 D passive Drain of the N-channel MOSFET, shorted externally with the other drain pins; the drawing labels this upper-row pin D.
7 D passive Drain of the N-channel MOSFET, shorted externally with the other drain pins; the drawing labels this upper-row pin D.
8 D passive Drain of the N-channel MOSFET, shorted externally with the other drain pins; the drawing labels this upper-row pin D.

Key specifications

Parameter Value
Manufacturer HUASHUO
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 40 V VGS=0V , ID=250uA 2
Static Drain-Source On-Resistance RDS(ON) 7.5 mΩ VGS=10V , ID=10A 2
Static Drain-Source On-Resistance RDS(ON) 10 mΩ VGS=4.5V , ID=8A 2
Gate Threshold Voltage VGS(th) 1 1.5 2.5 V VGS=VDS , ID=250uA 2
Drain-Source Leakage Current IDSS 1 uA VDS=32V , VGS=0V , TJ=25℃ 2
Drain-Source Leakage Current IDSS 5 uA VDS=32V , VGS=0V , TJ=55℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V , VDS=0V 2
Continuous Source Current IS 10.5 A VG=VD=0V , Force Current 2
Pulsed Source Current ISM 42 A 2
Diode Forward Voltage VSD 1 V VGS=0V , IS=1A , TJ=25℃ 2
Drain-Source Voltage VDS 40 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 12 A TC=25℃, VGS @ 10V 1
Continuous Drain Current ID 8.3 A TC=100℃, VGS @ 10V 1
Pulsed Drain Current IDM 42 A 1
Single Pulse Avalanche Energy EAS 76 mJ VDD=25V,VGS=10V,L=0.1mH,IAS=39A (note 3) 1
Avalanche Current IAS 39 A 1
Total Power Dissipation PD 1.5 W TC=25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-ambient (Steady State) RθJA 85 ℃/W Steady State; surface mounted on 1 inch FR-4 board, 2OZ copper (note 1) 1
Thermal Resistance Junction-Case RθJC 28 ℃/W 1

CAD (KiCad official)

  • Symbol: HSM4006
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: hsm4006-etched.step / hsm4006-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hsm4006.step / hsm4006.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HUASHUO datasheet (6 pp, sha256 d387d62b25f5632f, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF