component
HSM3206
Public Made by Adomby adom
HUASHUO MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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HSM3206
HUASHUO · MOSFETs · SOP-8
HSM3206 from HUASHUO, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of MOSFET 1; MOSFET rated 30 V VDS, 13 A continuous drain current. |
| 2 | G1 | input | Gate of MOSFET 1; gate-source voltage limited to ±20 V, threshold 1.2 to 2.5 V. |
| 3 | S2 | passive | Source of MOSFET 2; MOSFET rated 30 V VDS, 13 A continuous drain current. |
| 4 | G2 | input | Gate of MOSFET 2; gate-source voltage limited to ±20 V, threshold 1.2 to 2.5 V. |
| 5 | D2 | passive | Drain of MOSFET 2; connected internally with pin 6, 30 V max drain-source voltage. |
| 6 | D2 | passive | Drain of MOSFET 2; connected internally with pin 5, 30 V max drain-source voltage. |
| 7 | D1 | passive | Drain of MOSFET 1; connected internally with pin 8, 30 V max drain-source voltage. |
| 8 | D1 | passive | Drain of MOSFET 1; connected internally with pin 7, 30 V max drain-source voltage. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HUASHUO |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 30 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID@TA=25℃ | 13 | A | VGS @ 10V | 1 | ||
| Continuous Drain Current | ID@TA=70℃ | 10 | A | VGS @ 10V | 1 | ||
| Pulsed Drain Current | IDM | 65 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 105.8 | mJ | VDD=25V, VGS=10V, L=0.1mH, IAS=46A (note 3) | 1 | ||
| Avalanche Current | IAS | 46 | A | 1 | |||
| Total Power Dissipation | PD@TA=25℃ | 1.5 | W | TA=25℃ (limited by 150℃ junction temperature, note 4) | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-ambient | RθJA | 85 | ℃/W | Surface mounted on 1 inch² FR-4 board, 2OZ copper (note 1) | 1 | ||
| Thermal Resistance Junction-Case | RθJC | 25 | ℃/W | Note 1 | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | VGS=0V, ID=250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 8 | mΩ | VGS=10V, ID=12A | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 10 | mΩ | VGS=4.5V, ID=10A | 2 | ||
| Gate Threshold Voltage | VGS(th) | 1.2 | 1.4 | 2.5 | V | VGS=VDS, ID=250uA | 2 |
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=24V, VGS=0V, TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | 5 | uA | VDS=24V, VGS=0V, TJ=55℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Continuous Source Current | IS | 5 | A | VG=VD=0V, Force Current (note 1,5) | 2 | ||
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V, IS=1A, TJ=25℃ | 2 |
CAD (KiCad official)
- Symbol:
HSM3206 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
hsm3206-etched.step/hsm3206-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hsm3206.step/hsm3206.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HUASHUO datasheet (6 pp, sha256
34fd93ae2ad8bd17, retrieved 2026-10-21, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# HSM3206
**HUASHUO** · MOSFETs · SOP-8
HSM3206 from HUASHUO, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of MOSFET 1; MOSFET rated 30 V VDS, 13 A continuous drain current. |
| 2 | G1 | input | Gate of MOSFET 1; gate-source voltage limited to ±20 V, threshold 1.2 to 2.5 V. |
| 3 | S2 | passive | Source of MOSFET 2; MOSFET rated 30 V VDS, 13 A continuous drain current. |
| 4 | G2 | input | Gate of MOSFET 2; gate-source voltage limited to ±20 V, threshold 1.2 to 2.5 V. |
| 5 | D2 | passive | Drain of MOSFET 2; connected internally with pin 6, 30 V max drain-source voltage. |
| 6 | D2 | passive | Drain of MOSFET 2; connected internally with pin 5, 30 V max drain-source voltage. |
| 7 | D1 | passive | Drain of MOSFET 1; connected internally with pin 8, 30 V max drain-source voltage. |
| 8 | D1 | passive | Drain of MOSFET 1; connected internally with pin 7, 30 V max drain-source voltage. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HUASHUO |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | 30 | V | | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Continuous Drain Current | ID@TA=25℃ | | | 13 | A | VGS @ 10V | 1 |
| Continuous Drain Current | ID@TA=70℃ | | | 10 | A | VGS @ 10V | 1 |
| Pulsed Drain Current | IDM | | | 65 | A | | 1 |
| Single Pulse Avalanche Energy | EAS | | | 105.8 | mJ | VDD=25V, VGS=10V, L=0.1mH, IAS=46A (note 3) | 1 |
| Avalanche Current | IAS | | | 46 | A | | 1 |
| Total Power Dissipation | PD@TA=25℃ | | | 1.5 | W | TA=25℃ (limited by 150℃ junction temperature, note 4) | 1 |
| Storage Temperature Range | TSTG | -55 | | 150 | ℃ | | 1 |
| Operating Junction Temperature Range | TJ | -55 | | 150 | ℃ | | 1 |
| Thermal Resistance Junction-ambient | RθJA | | | 85 | ℃/W | Surface mounted on 1 inch² FR-4 board, 2OZ copper (note 1) | 1 |
| Thermal Resistance Junction-Case | RθJC | | | 25 | ℃/W | Note 1 | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 30 | | | V | VGS=0V, ID=250uA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | | 8 | mΩ | VGS=10V, ID=12A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | | 10 | mΩ | VGS=4.5V, ID=10A | 2 |
| Gate Threshold Voltage | VGS(th) | 1.2 | 1.4 | 2.5 | V | VGS=VDS, ID=250uA | 2 |
| Drain-Source Leakage Current | IDSS | | | 1 | uA | VDS=24V, VGS=0V, TJ=25℃ | 2 |
| Drain-Source Leakage Current | IDSS | | | 5 | uA | VDS=24V, VGS=0V, TJ=55℃ | 2 |
| Gate-Source Leakage Current | IGSS | -100 | | 100 | nA | VGS=±20V, VDS=0V | 2 |
| Continuous Source Current | IS | | | 5 | A | VG=VD=0V, Force Current (note 1,5) | 2 |
| Diode Forward Voltage | VSD | | | 1.2 | V | VGS=0V, IS=1A, TJ=25℃ | 2 |
## CAD (KiCad official)
- Symbol: `HSM3206`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `hsm3206-etched.step` / `hsm3206-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `hsm3206.step` / `hsm3206.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [HUASHUO datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8757799039146840064) (6 pp, sha256 `34fd93ae2ad8bd17`, retrieved 2026-10-21, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/hsm3206-datasheet.pdf)