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HSM3206

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HUASHUO MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Generated by kicad-footprint-generator · KiCad file format 20260206
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HSM3206

HUASHUO · MOSFETs · SOP-8

HSM3206 from HUASHUO, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of MOSFET 1; MOSFET rated 30 V VDS, 13 A continuous drain current.
2 G1 input Gate of MOSFET 1; gate-source voltage limited to ±20 V, threshold 1.2 to 2.5 V.
3 S2 passive Source of MOSFET 2; MOSFET rated 30 V VDS, 13 A continuous drain current.
4 G2 input Gate of MOSFET 2; gate-source voltage limited to ±20 V, threshold 1.2 to 2.5 V.
5 D2 passive Drain of MOSFET 2; connected internally with pin 6, 30 V max drain-source voltage.
6 D2 passive Drain of MOSFET 2; connected internally with pin 5, 30 V max drain-source voltage.
7 D1 passive Drain of MOSFET 1; connected internally with pin 8, 30 V max drain-source voltage.
8 D1 passive Drain of MOSFET 1; connected internally with pin 7, 30 V max drain-source voltage.

Key specifications

Parameter Value
Manufacturer HUASHUO
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 30 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID@TA=25℃ 13 A VGS @ 10V 1
Continuous Drain Current ID@TA=70℃ 10 A VGS @ 10V 1
Pulsed Drain Current IDM 65 A 1
Single Pulse Avalanche Energy EAS 105.8 mJ VDD=25V, VGS=10V, L=0.1mH, IAS=46A (note 3) 1
Avalanche Current IAS 46 A 1
Total Power Dissipation PD@TA=25℃ 1.5 W TA=25℃ (limited by 150℃ junction temperature, note 4) 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-ambient RθJA 85 ℃/W Surface mounted on 1 inch² FR-4 board, 2OZ copper (note 1) 1
Thermal Resistance Junction-Case RθJC 25 ℃/W Note 1 1
Drain-Source Breakdown Voltage BVDSS 30 V VGS=0V, ID=250uA 2
Static Drain-Source On-Resistance RDS(ON) 8 mΩ VGS=10V, ID=12A 2
Static Drain-Source On-Resistance RDS(ON) 10 mΩ VGS=4.5V, ID=10A 2
Gate Threshold Voltage VGS(th) 1.2 1.4 2.5 V VGS=VDS, ID=250uA 2
Drain-Source Leakage Current IDSS 1 uA VDS=24V, VGS=0V, TJ=25℃ 2
Drain-Source Leakage Current IDSS 5 uA VDS=24V, VGS=0V, TJ=55℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Continuous Source Current IS 5 A VG=VD=0V, Force Current (note 1,5) 2
Diode Forward Voltage VSD 1.2 V VGS=0V, IS=1A, TJ=25℃ 2

CAD (KiCad official)

  • Symbol: HSM3206
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: hsm3206-etched.step / hsm3206-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hsm3206.step / hsm3206.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HUASHUO datasheet (6 pp, sha256 34fd93ae2ad8bd17, retrieved 2026-10-21, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF