# HSM1641

**HUASHUO** · MOSFETs · SOP-8

HSM1641 from HUASHUO, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of MOSFET 1 (shown as the N-channel device in the pin diagram, VDS 40 V, ID 9 A). |
| 2 | G1 | input | Gate of MOSFET 1 (N-channel, VGS rated ±20 V, threshold 1.0 to 2.5 V). |
| 3 | S2 | passive | Source of MOSFET 2 (shown as the P-channel device in the pin diagram, VDS -40 V, ID -9 A). |
| 4 | G2 | input | Gate of MOSFET 2 (P-channel, VGS rated ±20 V, threshold -1.0 to -2.5 V). |
| 5 | D2 | passive | Drain of MOSFET 2 (P-channel), tied to pin 6, rated VDS -40 V and ID -9 A. |
| 6 | D2 | passive | Drain of MOSFET 2 (P-channel), tied to pin 5, rated VDS -40 V and ID -9 A. |
| 7 | D1 | passive | Drain of MOSFET 1 (N-channel), tied to pin 8, rated VDS 40 V and ID 9 A. |
| 8 | D1 | passive | Drain of MOSFET 1 (N-channel), tied to pin 7, rated VDS 40 V and ID 9 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HUASHUO |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| N-Ch Drain-Source Voltage | VDS |  |  | 40 | V |  | 1 |
| P-Ch Drain-Source Voltage | VDS | -40 |  |  | V |  | 1 |
| N-Ch Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| P-Ch Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| N-Ch Continuous Drain Current | ID@TA=25℃ |  |  | 9 | A | TA=25℃, VGS @ 10V | 1 |
| P-Ch Continuous Drain Current | ID@TA=25℃ | -9 |  |  | A | TA=25℃, VGS @ 10V | 1 |
| N-Ch Continuous Drain Current | ID@TA=70℃ |  |  | 6 | A | TA=70℃, VGS @ 10V | 1 |
| P-Ch Continuous Drain Current | ID@TA=70℃ | -6 |  |  | A | TA=70℃, VGS @ 10V | 1 |
| N-Ch Pulsed Drain Current | IDM |  |  | 23 | A |  | 1 |
| P-Ch Pulsed Drain Current | IDM | -22 |  |  | A |  | 1 |
| N-Ch Single Pulse Avalanche Energy | EAS |  |  | 16.2 | mJ |  | 1 |
| P-Ch Single Pulse Avalanche Energy | EAS |  |  | 39 | mJ |  | 1 |
| N-Ch Avalanche Current | IAS |  |  | 18 | A |  | 1 |
| P-Ch Avalanche Current | IAS | -28 |  |  | A |  | 1 |
| N-Ch Total Power Dissipation | PD@TA=25℃ |  |  | 1.67 | W | TA=25℃ | 1 |
| P-Ch Total Power Dissipation | PD@TA=25℃ |  |  | 1.67 | W | TA=25℃ | 1 |
| Storage Temperature Range (N-Ch and P-Ch) | TSTG | -55 |  | 150 | ℃ |  | 1 |
| Operating Junction Temperature Range (N-Ch and P-Ch) | TJ | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance Junction-Ambient | RθJA |  |  | 75 | ℃/W |  | 1 |
| Thermal Resistance Junction-Case | RθJC |  |  | 30 | ℃/W |  | 1 |
| N-Ch Drain-Source Breakdown Voltage | BVDSS | 40 |  |  | V | VGS=0V, ID=250uA | 2 |
| N-Ch Static Drain-Source On-Resistance | RDS(ON) |  |  | 20 | mΩ | VGS=10V, ID=5A | 2 |
| N-Ch Static Drain-Source On-Resistance | RDS(ON) |  |  | 25 | mΩ | VGS=4.5V, ID=4A | 2 |
| N-Ch Gate Threshold Voltage | VGS(th) | 1 | 1.5 | 2.5 | V | VGS=VDS, ID=250uA | 2 |
| N-Ch Drain-Source Leakage Current | IDSS |  |  | 1 | uA | VDS=32V, VGS=0V, TJ=25℃ | 2 |
| N-Ch Drain-Source Leakage Current | IDSS |  |  | 5 | uA | VDS=32V, VGS=0V, TJ=55℃ | 2 |
| N-Ch Gate-Source Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±20V, VDS=0V | 2 |
| N-Ch Continuous Source Current | IS |  |  | 6.1 | A | VG=VD=0V, Force Current | 2 |
| N-Ch Pulsed Source Current | ISM |  |  | 23 | A |  | 2 |
| N-Ch Diode Forward Voltage | VSD |  |  | 1.2 | V | VGS=0V, IS=1A, TJ=25℃ | 2 |
| P-Ch Drain-Source Breakdown Voltage | BVDSS | -40 |  |  | V | VGS=0V, ID=-250uA | 3 |
| P-Ch Static Drain-Source On-Resistance | RDS(ON) |  |  | 32 | mΩ | VGS=-10V, ID=-6A | 3 |
| P-Ch Static Drain-Source On-Resistance | RDS(ON) |  |  | 46 | mΩ | VGS=-4.5V, ID=-3A | 3 |
| P-Ch Gate Threshold Voltage | VGS(th) | -1 | -1.7 | -2.5 | V | VGS=VDS, ID=-250uA | 3 |
| P-Ch Drain-Source Leakage Current | IDSS |  |  | 1 | uA | VDS=-32V, VGS=0V, TJ=25℃ | 3 |
| P-Ch Drain-Source Leakage Current | IDSS |  |  | 5 | uA | VDS=-32V, VGS=0V, TJ=55℃ | 3 |
| P-Ch Gate-Source Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±20V, VDS=0V | 3 |
| P-Ch Continuous Source Current | IS |  |  | -6 | A | VG=VD=0V, Force Current | 3 |
| P-Ch Pulsed Source Current | ISM |  |  | -22 | A |  | 3 |
| P-Ch Diode Forward Voltage | VSD |  |  | -1.2 | V | VGS=0V, IS=-1A, TJ=25℃ | 3 |

## CAD (KiCad official)

- Symbol: `HSM1641`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `hsm1641-etched.step` / `hsm1641-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `hsm1641.step` / `hsm1641.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HUASHUO datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8757801606111354880) (9 pp, sha256 `ad03de016cabb559`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/hsm1641-datasheet.pdf)