component
HSM1641
Public Made by Adomby adom
HUASHUO MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownHSM1641
HUASHUO · MOSFETs · SOP-8
HSM1641 from HUASHUO, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of MOSFET 1 (shown as the N-channel device in the pin diagram, VDS 40 V, ID 9 A). |
| 2 | G1 | input | Gate of MOSFET 1 (N-channel, VGS rated ±20 V, threshold 1.0 to 2.5 V). |
| 3 | S2 | passive | Source of MOSFET 2 (shown as the P-channel device in the pin diagram, VDS -40 V, ID -9 A). |
| 4 | G2 | input | Gate of MOSFET 2 (P-channel, VGS rated ±20 V, threshold -1.0 to -2.5 V). |
| 5 | D2 | passive | Drain of MOSFET 2 (P-channel), tied to pin 6, rated VDS -40 V and ID -9 A. |
| 6 | D2 | passive | Drain of MOSFET 2 (P-channel), tied to pin 5, rated VDS -40 V and ID -9 A. |
| 7 | D1 | passive | Drain of MOSFET 1 (N-channel), tied to pin 8, rated VDS 40 V and ID 9 A. |
| 8 | D1 | passive | Drain of MOSFET 1 (N-channel), tied to pin 7, rated VDS 40 V and ID 9 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HUASHUO |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| N-Ch Drain-Source Voltage | VDS | 40 | V | 1 | |||
| P-Ch Drain-Source Voltage | VDS | -40 | V | 1 | |||
| N-Ch Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| P-Ch Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| N-Ch Continuous Drain Current | ID@TA=25℃ | 9 | A | TA=25℃, VGS @ 10V | 1 | ||
| P-Ch Continuous Drain Current | ID@TA=25℃ | -9 | A | TA=25℃, VGS @ 10V | 1 | ||
| N-Ch Continuous Drain Current | ID@TA=70℃ | 6 | A | TA=70℃, VGS @ 10V | 1 | ||
| P-Ch Continuous Drain Current | ID@TA=70℃ | -6 | A | TA=70℃, VGS @ 10V | 1 | ||
| N-Ch Pulsed Drain Current | IDM | 23 | A | 1 | |||
| P-Ch Pulsed Drain Current | IDM | -22 | A | 1 | |||
| N-Ch Single Pulse Avalanche Energy | EAS | 16.2 | mJ | 1 | |||
| P-Ch Single Pulse Avalanche Energy | EAS | 39 | mJ | 1 | |||
| N-Ch Avalanche Current | IAS | 18 | A | 1 | |||
| P-Ch Avalanche Current | IAS | -28 | A | 1 | |||
| N-Ch Total Power Dissipation | PD@TA=25℃ | 1.67 | W | TA=25℃ | 1 | ||
| P-Ch Total Power Dissipation | PD@TA=25℃ | 1.67 | W | TA=25℃ | 1 | ||
| Storage Temperature Range (N-Ch and P-Ch) | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range (N-Ch and P-Ch) | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-Ambient | RθJA | 75 | ℃/W | 1 | |||
| Thermal Resistance Junction-Case | RθJC | 30 | ℃/W | 1 | |||
| N-Ch Drain-Source Breakdown Voltage | BVDSS | 40 | V | VGS=0V, ID=250uA | 2 | ||
| N-Ch Static Drain-Source On-Resistance | RDS(ON) | 20 | mΩ | VGS=10V, ID=5A | 2 | ||
| N-Ch Static Drain-Source On-Resistance | RDS(ON) | 25 | mΩ | VGS=4.5V, ID=4A | 2 | ||
| N-Ch Gate Threshold Voltage | VGS(th) | 1 | 1.5 | 2.5 | V | VGS=VDS, ID=250uA | 2 |
| N-Ch Drain-Source Leakage Current | IDSS | 1 | uA | VDS=32V, VGS=0V, TJ=25℃ | 2 | ||
| N-Ch Drain-Source Leakage Current | IDSS | 5 | uA | VDS=32V, VGS=0V, TJ=55℃ | 2 | ||
| N-Ch Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| N-Ch Continuous Source Current | IS | 6.1 | A | VG=VD=0V, Force Current | 2 | ||
| N-Ch Pulsed Source Current | ISM | 23 | A | 2 | |||
| N-Ch Diode Forward Voltage | VSD | 1.2 | V | VGS=0V, IS=1A, TJ=25℃ | 2 | ||
| P-Ch Drain-Source Breakdown Voltage | BVDSS | -40 | V | VGS=0V, ID=-250uA | 3 | ||
| P-Ch Static Drain-Source On-Resistance | RDS(ON) | 32 | mΩ | VGS=-10V, ID=-6A | 3 | ||
| P-Ch Static Drain-Source On-Resistance | RDS(ON) | 46 | mΩ | VGS=-4.5V, ID=-3A | 3 | ||
| P-Ch Gate Threshold Voltage | VGS(th) | -1 | -1.7 | -2.5 | V | VGS=VDS, ID=-250uA | 3 |
| P-Ch Drain-Source Leakage Current | IDSS | 1 | uA | VDS=-32V, VGS=0V, TJ=25℃ | 3 | ||
| P-Ch Drain-Source Leakage Current | IDSS | 5 | uA | VDS=-32V, VGS=0V, TJ=55℃ | 3 | ||
| P-Ch Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 3 | |
| P-Ch Continuous Source Current | IS | -6 | A | VG=VD=0V, Force Current | 3 | ||
| P-Ch Pulsed Source Current | ISM | -22 | A | 3 | |||
| P-Ch Diode Forward Voltage | VSD | -1.2 | V | VGS=0V, IS=-1A, TJ=25℃ | 3 |
CAD (KiCad official)
- Symbol:
HSM1641 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
hsm1641-etched.step/hsm1641-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hsm1641.step/hsm1641.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HUASHUO datasheet (9 pp, sha256
ad03de016cabb559, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).