# HSH4119

**HUASHUO** · MOSFETs · TO-263

HSH4119 from HUASHUO, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the P-channel MOSFET, with a maximum gate-source voltage of ±20 V. |
| 2 | D | passive | Drain terminal, connected to the TO-263 tab, rated for a drain-source voltage of -40 V and a continuous drain current of -150 A at TC=25℃ (package limited). |
| 3 | S | passive | Source terminal of the P-channel MOSFET, with a continuous source (body-diode) current of up to -150 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HUASHUO |
| Package | TO-263 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | -40 | V |  | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Continuous Drain Current, TC=25℃ | ID |  |  | -150 | A | VGS @ -10V | 1 |
| Continuous Drain Current, TC=100℃ | ID |  |  | -103 | A | VGS @ -10V | 1 |
| Pulsed Drain Current | IDM |  |  | -580 | A |  | 1 |
| Single Pulse Avalanche Energy | EAS |  |  | 1250 | mJ | VDD=-40V, VGS=-10V, L=0.5mH, IAS=-70A (note 3) | 1 |
| Avalanche Current | IAS |  |  | -70 | A |  | 1 |
| Total Power Dissipation | PD |  |  | 200 | W | TC=25℃ (note 4) | 1 |
| Storage Temperature Range | TSTG | -55 |  | 150 | ℃ |  | 1 |
| Operating Junction Temperature Range | TJ | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance Junction-ambient | RθJA |  |  | 62 | ℃/W | Steady State; surface mounted on 1 inch² FR-4 board, 2OZ copper (note 1) | 1 |
| Thermal Resistance Junction-case | RθJC |  |  | 0.95 | ℃/W | (note 1) | 1 |
| Drain-Source Breakdown Voltage | BVDSS | -40 |  |  | V | VGS=0V, ID=-250uA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 3.9 | 4.5 | mΩ | VGS=-10V, ID=-30A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 4.9 | 5.6 | mΩ | VGS=-4.5V, ID=-20A | 2 |
| Gate Threshold Voltage | VGS(th) | -1 | -1.7 | -2.5 | V | VGS=VDS, ID=-250uA | 2 |
| Drain-Source Leakage Current | IDSS |  |  | -1 | uA | VDS=-40V, VGS=0V, TJ=25℃ | 2 |
| Drain-Source Leakage Current | IDSS |  |  | -100 | uA | VDS=-40V, VGS=0V, TJ=125℃ | 2 |
| Gate-Source Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±20V, VDS=0V | 2 |
| Continuous Source Current | IS |  |  | -150 | A | VG=VD=0V, Force Current (notes 1,5) | 2 |
| Diode Forward Voltage | VSD |  |  | -1.2 | V | VGS=0V, IS=-20A, TJ=25℃ | 2 |

## CAD (KiCad official)

- Symbol: `HSH4119`
- Footprint: `Package_TO_SOT_SMD:TO-263-2`
- 3D model: TO-263 (KiCad packages3D, STEP)
- 3D model files: `hsh4119-etched.step` / `hsh4119-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `hsh4119.step` / `hsh4119.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HUASHUO datasheet](docs/hsh4119-datasheet.pdf) (6 pp, sha256 `9a4d123bd7f50a5e`, retrieved 2026-11-05, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/hsh4119-datasheet.pdf)