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HSH4119

HUASHUO · MOSFETs · TO-263

HSH4119 from HUASHUO, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal of the P-channel MOSFET, with a maximum gate-source voltage of ±20 V.
2 D passive Drain terminal, connected to the TO-263 tab, rated for a drain-source voltage of -40 V and a continuous drain current of -150 A at TC=25℃ (package limited).
3 S passive Source terminal of the P-channel MOSFET, with a continuous source (body-diode) current of up to -150 A.

Key specifications

Parameter Value
Manufacturer HUASHUO
Package TO-263
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -40 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current, TC=25℃ ID -150 A VGS @ -10V 1
Continuous Drain Current, TC=100℃ ID -103 A VGS @ -10V 1
Pulsed Drain Current IDM -580 A 1
Single Pulse Avalanche Energy EAS 1250 mJ VDD=-40V, VGS=-10V, L=0.5mH, IAS=-70A (note 3) 1
Avalanche Current IAS -70 A 1
Total Power Dissipation PD 200 W TC=25℃ (note 4) 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-ambient RθJA 62 ℃/W Steady State; surface mounted on 1 inch² FR-4 board, 2OZ copper (note 1) 1
Thermal Resistance Junction-case RθJC 0.95 ℃/W (note 1) 1
Drain-Source Breakdown Voltage BVDSS -40 V VGS=0V, ID=-250uA 2
Static Drain-Source On-Resistance RDS(ON) 3.9 4.5 mΩ VGS=-10V, ID=-30A 2
Static Drain-Source On-Resistance RDS(ON) 4.9 5.6 mΩ VGS=-4.5V, ID=-20A 2
Gate Threshold Voltage VGS(th) -1 -1.7 -2.5 V VGS=VDS, ID=-250uA 2
Drain-Source Leakage Current IDSS -1 uA VDS=-40V, VGS=0V, TJ=25℃ 2
Drain-Source Leakage Current IDSS -100 uA VDS=-40V, VGS=0V, TJ=125℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Continuous Source Current IS -150 A VG=VD=0V, Force Current (notes 1,5) 2
Diode Forward Voltage VSD -1.2 V VGS=0V, IS=-20A, TJ=25℃ 2

CAD (KiCad official)

  • Symbol: HSH4119
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: TO-263 (KiCad packages3D, STEP)
  • 3D model files: hsh4119-etched.step / hsh4119-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hsh4119.step / hsh4119.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HUASHUO datasheet (6 pp, sha256 9a4d123bd7f50a5e, retrieved 2026-11-05, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF