component
HSH3024
Public Made by Adomby adom
HUASHUO MOSFETs, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 3h ago |
| viewers | 3h ago |
| hsh3024-etched.glb | 3h ago |
| hsh3024-etched.step | 3h ago |
| hsh3024-hero.glb | 3h ago |
| hsh3024-hero.overlay.json | 3h ago |
| hsh3024.glb | 3h ago |
| hsh3024.kicad_mod | 3h ago |
| hsh3024.kicad_sym | 3h ago |
| hsh3024.lbr | 3h ago |
| hsh3024.step | 3h ago |
| package.json | 3h ago |
| page.json | 3h ago |
| README.md | 3h ago |
HSH3024
HUASHUO · MOSFETs · TO-263
HSH3024 from HUASHUO, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±20 V, with threshold VGS(th) of 1 V min to 2.5 V max at 250 uA. |
| 2 | D | passive | Drain (middle pin, also the exposed tab); VDS rating 30 V and continuous drain current 230 A at TC=25℃. |
| 3 | S | passive | Source; body-diode continuous current up to 230 A with VSD of 1.2 V max at IS=20A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HUASHUO |
| Package | TO-263 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 30 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID@TC=25℃ | 230 | A | VGS @ 10V | 1 | ||
| Continuous Drain Current | ID@TC=100℃ | 142 | A | VGS @ 10V | 1 | ||
| Pulsed Drain Current | IDM | 928 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 1156 | mJ | 1 | |||
| Maximum Power Dissipation | PD@TC=25℃ | 144 | W | 1 | |||
| Maximum Power Dissipation | PD@TC=100℃ | 57 | W | 1 | |||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-Ambient | RθJA | 62 | ℃/W | 1 | |||
| Thermal Resistance Junction-Case | RθJC | 0.68 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | VGS=0V, ID=250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 1.3 | 1.7 | mΩ | VGS=10V, ID=20A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 2.1 | 2.8 | mΩ | VGS=4.5V, ID=20A | 2 | |
| Gate Threshold Voltage | VGS(th) | 1 | 1.4 | 2.5 | V | VGS=VDS, ID=250uA | 2 |
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=30V, VGS=0V, TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | 100 | uA | VDS=30V, VGS=0V, TJ=125℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Source-Drain Current (Body Diode) | ISD | 230 | A | VG=VD=0V, Force Current | 2 | ||
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V, IS=20A, TJ=25℃ | 2 |
CAD (KiCad official)
- Symbol:
HSH3024 - Footprint:
Package_TO_SOT_SMD:TO-263-2 - 3D model: TO-263 (KiCad packages3D, STEP)
- 3D model files:
hsh3024-etched.step/hsh3024-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hsh3024.step/hsh3024.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HUASHUO datasheet (6 pp, sha256
542fd85922787220, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).