# HSD60N10

**HUAKE** · MOSFETs · TO-252

HSD60N10 from HUAKE, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; drive with VGS up to ±20 V maximum, threshold 1.2 to 2.8 V at ID=250 µA, RDS(on) specified at VGS=10 V and 6 V. |
| 2 | D | passive | Drain (middle lead, internally connected to the mounting tab); VDSS 100 V, continuous ID 60 A at Tc=25C, pulsed 240 A. |
| 3 | S | passive | Source; continuous body-diode forward current 60 A, pulsed 240 A, VSD max 1.3 V at IS=30 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HUAKE |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS |  |  | 100 | V |  | 1 |
| Drain Current - Continuous | ID |  |  | 60 | A | Tc=25C | 1 |
| Drain Current - Continuous | ID |  |  | 37.9 | A | Tc=100C | 1 |
| Drain Current - Pulsed | IDM |  |  | 240 | A |  | 1 |
| Gate-Source Voltage | VGSS | -20 |  | 20 | V |  | 1 |
| Single Pulsed Avalanche Energy (Limit Reference Value) | EAS |  |  | 175 | mJ | Limit Reference Value (Note5) | 1 |
| Power Dissipation | PD |  |  | 91 | W | TC =25C | 1 |
| Power Dissipation derating | PD |  |  | 0.73 | W/C | Derate above 25°C | 1 |
| Operating Junction Temperature | Tj |  |  | 150 | C |  | 1 |
| Storage Temperature Range | Tstg | -55 |  | 150 | C |  | 1 |
| Thermal Resistance, Junction to Case | RθJC |  |  | 1.37 | C /W | Note2: Surface Mounted on FR4 Board, t ≤ 10 sec | 1 |
| Drain-source Breakdown Voltage | BVDSS | 100 |  |  | V | VGS=0V, ID=250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | μA | VDS=100V, VGS=0V | 2 |
| Gate-Body Leakage Current, Forward | IGSSF |  |  | 100 | nA | VGS=+20V, VDS=0V | 2 |
| Gate-Body Leakage Current, Reverse | IGSSR |  |  | -100 | nA | VGS=-20V, VDS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | 1.2 | 2 | 2.8 | V | VDS= VGS, ID=250μA | 2 |
| Static Drain-Source On-Resistance | RDS(on) |  | 8.5 | 12 | mΩ | VGS=10 V, ID=30A | 2 |
| Static Drain-Source On-Resistance | RDS(on) |  | 10.5 | 15 | mΩ | VGS=6 V, ID=30A | 2 |
| Maximum Continuous Drain-Source Diode Forward Current | IS |  |  | 60 | A | (Note2) | 2 |
| Maximum Pulsed Drain-Source Diode Forward Current | ISM |  |  | 240 | A |  | 2 |
| Drain-Source Diode Forward Voltage | VSD |  |  | 1.3 | V | VGS =0V, IS=30A (Note3) | 2 |

## CAD (KiCad official)

- Symbol: `HSD60N10`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `hsd60n10-etched.step` / `hsd60n10-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `hsd60n10.step` / `hsd60n10.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HUAKE datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8597552948386156544) (6 pp, sha256 `5bf7f5e70a278170`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/hsd60n10-datasheet.pdf)