component
HSD60N10
Public Made by Adomby adom
HUAKE MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownHSD60N10
HUAKE · MOSFETs · TO-252
HSD60N10 from HUAKE, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; drive with VGS up to ±20 V maximum, threshold 1.2 to 2.8 V at ID=250 µA, RDS(on) specified at VGS=10 V and 6 V. |
| 2 | D | passive | Drain (middle lead, internally connected to the mounting tab); VDSS 100 V, continuous ID 60 A at Tc=25C, pulsed 240 A. |
| 3 | S | passive | Source; continuous body-diode forward current 60 A, pulsed 240 A, VSD max 1.3 V at IS=30 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HUAKE |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 100 | V | 1 | |||
| Drain Current - Continuous | ID | 60 | A | Tc=25C | 1 | ||
| Drain Current - Continuous | ID | 37.9 | A | Tc=100C | 1 | ||
| Drain Current - Pulsed | IDM | 240 | A | 1 | |||
| Gate-Source Voltage | VGSS | -20 | 20 | V | 1 | ||
| Single Pulsed Avalanche Energy (Limit Reference Value) | EAS | 175 | mJ | Limit Reference Value (Note5) | 1 | ||
| Power Dissipation | PD | 91 | W | TC =25C | 1 | ||
| Power Dissipation derating | PD | 0.73 | W/C | Derate above 25°C | 1 | ||
| Operating Junction Temperature | Tj | 150 | C | 1 | |||
| Storage Temperature Range | Tstg | -55 | 150 | C | 1 | ||
| Thermal Resistance, Junction to Case | RθJC | 1.37 | C /W | Note2: Surface Mounted on FR4 Board, t ≤ 10 sec | 1 | ||
| Drain-source Breakdown Voltage | BVDSS | 100 | V | VGS=0V, ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=100V, VGS=0V | 2 | ||
| Gate-Body Leakage Current, Forward | IGSSF | 100 | nA | VGS=+20V, VDS=0V | 2 | ||
| Gate-Body Leakage Current, Reverse | IGSSR | -100 | nA | VGS=-20V, VDS=0V | 2 | ||
| Gate Threshold Voltage | VGS(th) | 1.2 | 2 | 2.8 | V | VDS= VGS, ID=250μA | 2 |
| Static Drain-Source On-Resistance | RDS(on) | 8.5 | 12 | mΩ | VGS=10 V, ID=30A | 2 | |
| Static Drain-Source On-Resistance | RDS(on) | 10.5 | 15 | mΩ | VGS=6 V, ID=30A | 2 | |
| Maximum Continuous Drain-Source Diode Forward Current | IS | 60 | A | (Note2) | 2 | ||
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | 240 | A | 2 | |||
| Drain-Source Diode Forward Voltage | VSD | 1.3 | V | VGS =0V, IS=30A (Note3) | 2 |
CAD (KiCad official)
- Symbol:
HSD60N10 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
hsd60n10-etched.step/hsd60n10-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hsd60n10.step/hsd60n10.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HUAKE datasheet (6 pp, sha256
5bf7f5e70a278170, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).