component
HSCTWA60N12G24AG
Public Made by Adomby adom
HXY MOSFET Silicon Carbide Field Effect Transistor (MOSFET), TO-247-4L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
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{
"schema_version": 1,
"type": "component",
"slug": "hsctwa60n12g24ag",
"title": "HSCTWA60N12G24AG",
"brief": "HXY MOSFET Silicon Carbide Field Effect Transistor (MOSFET), TO-247-4L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
"version": "0.1.0",
"license": "CC-BY-SA-4.0",
"tags": [
"component",
"silicon carbide (sic) devices",
"hsctwa60n12g24ag",
"factory-2.0.0",
"extractor-text"
],
"component": {
"mpn": "HSCTWA60N12G24AG",
"manufacturer": "HXY MOSFET",
"package": "TO-247-4L",
"pin_count": 4,
"category": "Silicon Carbide (SiC) Devices",
"subcategory": "Silicon Carbide Field Effect Transistor (MOSFET)",
"datasheet": "https://datasheet.lcsc.com/datasheet/pdf/02578a2abbd84f294f92e294ce4e8a83.pdf",
"parts": {
"symbol": "hsctwa60n12g24ag.kicad_sym",
"footprint": "hsctwa60n12g24ag.kicad_mod",
"model_3d": "hsctwa60n12g24ag-hero.glb",
"model_3d_plain": "hsctwa60n12g24ag-etched.glb",
"model_3d_step": "hsctwa60n12g24ag-etched.step",
"model_3d_step_plain": "hsctwa60n12g24ag.step",
"lbr": "hsctwa60n12g24ag.lbr"
},
"distributor_links": {
"lcsc": "C42389100"
},
"distributor_check": {
"checked_at": "2026-11-04T12:53:08Z",
"source": "Component Ocean /api/assign-pns",
"digikey": {
"pn": null,
"status": "no match"
},
"mouser": {
"pn": null,
"status": "no match"
}
},
"pins": [
{
"number": "1",
"name": "Drain",
"type": "passive",
"description": "Drain terminal, also the metal tab; rated VDSmax 1200 V at VGS = 0 V and ID = 100 μA, with continuous ID of 63 A at VGS = 15 V and TC = 25 ˚C."
},
{
"number": "2",
"name": "Power Source",
"type": "passive",
"description": "Power source terminal carrying the main switching current, kept separate from the driver source pin per the package feature list."
},
{
"number": "3",
"name": "Driver Source",
"type": "passive",
"description": "Separate driver source pin for the gate drive return, provided to reduce switching losses and minimize gate ringing."
},
{
"number": "4",
"name": "Gate",
"type": "input",
"description": "Gate input with static limits of -4/+15 V (MOSFET can also safely operate at 0/+15 V) and dynamic limits of -8/+19 V for AC f > 1 Hz, or -4/+19 V when using the body diode."
}
],
"provenance": {
"extractor": "extract_pins 0.3",
"factory_chain": {
"factory": "2.0.0",
"extractor": "extract_pins 0.3",
"primary_model": "claude-haiku-5-5",
"primary_mode": "text",
"consensus_model": "claude-sonnet-5-5",
"consensus": "agreed",
"guards": "pin_guards 0.1: passed",
"guard_notes": [
"extractor flagged: The ordering table on page 1 gives the pin functions and numbers for TO-247H-4L. The package dimensi; The pin types (passive for drain and source pins, input for gate) are KiCad-class assignments inferr"
],
"pages_sent": 11,
"cost_usd": 0.0476,
"at": "2026-11-04T12:52:59"
},
"datasheet": {
"url": "https://datasheet.lcsc.com/datasheet/pdf/02578a2abbd84f294f92e294ce4e8a83.pdf",
"pages": 11,
"sha256": "3f54410f0dd08f7c",
"source_tier": "lcsc"
},
"cad": "KiCad official (CC-BY-SA 4.0)",
"pins": {
"total": 4,
"described": 4,
"cites_pages": true,
"refuses_to_fabricate": true
}
},
"viewers": {
"symbol": "viewers/symbol.html",
"footprint": "viewers/footprint.html"
},
"models_3d": [
{
"file": "hsctwa60n12g24ag.step",
"role": "plain",
"up": "Z",
"units": "mm",
"origin": "footprint origin = pad-pattern centre",
"seat": "body on z = 0, through-hole leads below",
"extents_mm": [
15.9,
5.03,
41.1
],
"zmin_mm": -15.83,
"centre_offset_mm": 0.414,
"footprint_binding": "identity",
"sha256": "976ae560ee073c7450ef39d3d2fc3006e5eed9c51132093905f3e98066a0fc8d",
"checked": "2026-11-04",
"checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
},
{
"file": "hsctwa60n12g24ag-etched.step",
"role": "eda",
"up": "Z",
"units": "mm",
"origin": "footprint origin = pad-pattern centre",
"seat": "body on z = 0, through-hole leads below",
"extents_mm": [
15.9,
5.03,
41.1
],
"zmin_mm": -15.83,
"centre_offset_mm": 0.414,
"footprint_binding": "identity",
"sha256": "8847f5e398da22e0ae97c7870c7a4f1ee9cc14802a3875e239def18ccf570f62",
"checked": "2026-11-04",
"checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
}
]
},
"metadata": {
"specs": {
"Manufacturer": "HXY MOSFET",
"Package": "TO-247-4L",
"Category": "Silicon Carbide (SiC) Devices",
"Pins": "4"
},
"characteristics": {
"version": 1,
"source": "datasheet",
"datasheet_sha256": "3f54410f0dd08f7c0a40c201ebfd5ad097ddb753c9b5c8c2fb8b01fd740bbfd5",
"rows": [
{
"name": "Drain-Source Voltage",
"symbol": "VDSmax",
"kind": "absolute_maximum",
"unit": "V",
"min": null,
"typ": null,
"max": 1200,
"conditions": "VGS = 0 V, ID = 100 μA",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Gate-Source Voltage (dynamic)",
"symbol": "VGSmax",
"kind": "absolute_maximum",
"unit": "V",
"min": -8,
"typ": null,
"max": 19,
"conditions": "AC (f >1 Hz) Note 1",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Gate-Source Voltage (static)",
"symbol": "VGSop",
"kind": "absolute_maximum",
"unit": "V",
"min": -4,
"typ": null,
"max": 15,
"conditions": "Static Note 2",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Continuous Drain Current",
"symbol": "ID",
"kind": "absolute_maximum",
"unit": "A",
"min": null,
"typ": null,
"max": 63,
"conditions": "VGS = 15 V, TC = 25˚C",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Continuous Drain Current",
"symbol": "ID",
"kind": "absolute_maximum",
"unit": "A",
"min": null,
"typ": null,
"max": 48,
"conditions": "VGS = 15 V, TC = 100˚C",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Pulsed Drain Current",
"symbol": "ID(pulse)",
"kind": "absolute_maximum",
"unit": "A",
"min": null,
"typ": null,
"max": 120,
"conditions": "Pulse width tP limited by Tjmax",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Power Dissipation",
"symbol": "PD",
"kind": "absolute_maximum",
"unit": "W",
"min": null,
"typ": null,
"max": 283,
"conditions": "TC =25˚C, TJ = 175 ˚C",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Operating Junction and Storage Temperature",
"symbol": "TJ, Tstg",
"kind": "absolute_maximum",
"unit": "˚C",
"min": -40,
"typ": null,
"max": 175,
"conditions": "",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Solder Temperature",
"symbol": "TL",
"kind": "absolute_maximum",
"unit": "˚C",
"min": null,
"typ": null,
"max": 260,
"conditions": "1.6mm (0.063”) from case for 10s",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Drain-Source Breakdown Voltage",
"symbol": "V(BR)DSS",
"kind": "electrical",
"unit": "V",
"min": 1200,
"typ": null,
"max": null,
"conditions": "VGS = 0 V, ID = 100 μA",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Gate Threshold Voltage",
"symbol": "VGS(th)",
"kind": "electrical",
"unit": "V",
"min": 1.8,
"typ": 2.5,
"max": 3.6,
"conditions": "VDS = VGS, ID = 11.5 mA",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Gate Threshold Voltage (TJ = 175ºC)",
"symbol": "VGS(th)",
"kind": "electrical",
"unit": "V",
"min": 2,
"typ": null,
"max": null,
"conditions": "VDS = VGS, ID = 11.5 mA, TJ = 175ºC",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Zero Gate Voltage Drain Current",
"symbol": "IDSS",
"kind": "electrical",
"unit": "μA",
"min": null,
"typ": 1,
"max": 50,
"conditions": "VDS = 1200 V, VGS = 0 V",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Gate-Source Leakage Current",
"symbol": "IGSS",
"kind": "electrical",
"unit": "nA",
"min": null,
"typ": 10,
"max": 250,
"conditions": "VGS = 15 V, VDS = 0 V",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Drain-Source On-State Resistance",
"symbol": "RDS(on)",
"kind": "electrical",
"unit": "mΩ",
"min": 23,
"typ": 32,
"max": 43,
"conditions": "VGS = 15 V, ID = 40 A",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Drain-Source On-State Resistance (TJ = 175ºC)",
"symbol": "RDS(on)",
"kind": "electrical",
"unit": "mΩ",
"min": null,
"typ": 57.6,
"max": null,
"conditions": "VGS = 15 V, ID = 40 A, TJ = 175ºC",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Transconductance",
"symbol": "gfs",
"kind": "electrical",
"unit": "S",
"min": null,
"typ": 27,
"max": null,
"conditions": "VDS= 20 V, IDS= 40 A",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Transconductance (TJ = 175ºC)",
"symbol": "gfs",
"kind": "electrical",
"unit": "S",
"min": null,
"typ": 22,
"max": null,
"conditions": "VDS= 20 V, IDS= 40 A, TJ = 175ºC",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Input Capacitance",
"symbol": "Ciss",
"kind": "electrical",
"unit": "pF",
"min": null,
"typ": 3357,
"max": null,
"conditions": "VGS = 0 V, VDS = 1000 V, f=100kHz, VAC = 25 mV",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Output Capacitance",
"symbol": "Coss",
"kind": "electrical",
"unit": "pF",
"min": null,
"typ": 129,
"max": null,
"conditions": "VGS = 0 V, VDS = 1000 V, f=100kHz, VAC = 25 mV",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Reverse Transfer Capacitance",
"symbol": "Crss",
"kind": "electrical",
"unit": "pF",
"min": null,
"typ": 8,
"max": null,
"conditions": "VGS = 0 V, VDS = 1000 V, f=100kHz, VAC = 25 mV",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Coss Stored Energy",
"symbol": "Eoss",
"kind": "electrical",
"unit": "μJ",
"min": null,
"typ": 76,
"max": null,
"conditions": "Fig. 16",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Turn-On Switching Energy (SiC Diode FWD)",
"symbol": "EON",
"kind": "electrical",
"unit": "μJ",
"min": null,
"typ": 367,
"max": null,
"conditions": "VDS = 800 V, VGS = -4 V/+15 V, ID = 40 A, RG(ext) = 2.5Ω, L= 65.7 μH, Tj = 175ºC",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Turn Off Switching Energy (SiC Diode FWD)",
"symbol": "EOFF",
"kind": "electrical",
"unit": "μJ",
"min": null,
"typ": 123,
"max": null,
"conditions": "VDS = 800 V, VGS = -4 V/+15 V, ID = 40 A, RG(ext) = 2.5Ω, L= 65.7 μH, Tj = 175ºC",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Turn-On Switching Energy (Body Diode FWD)",
"symbol": "EON",
"kind": "electrical",
"unit": "μJ",
"min": null,
"typ": 955,
"max": null,
"conditions": "VDS = 800 V, VGS = -4 V/+15 V, ID = 40 A, RG(ext) = 2.5Ω, L= 65.7 μH, Tj = 175ºC",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Turn Off Switching Energy (Body Diode FWD)",
"symbol": "EOFF",
"kind": "electrical",
"unit": "μJ",
"min": null,
"typ": 107,
"max": null,
"conditions": "VDS = 800 V, VGS = -4 V/+15 V, ID = 40 A, RG(ext) = 2.5Ω, L= 65.7 μH, Tj = 175ºC",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Turn-On Delay Time",
"symbol": "td(on)",
"kind": "timing",
"unit": "ns",
"min": null,
"typ": 25,
"max": null,
"conditions": "VDD = 800 V, VGS = -4 V/15 V, RG(ext) = 2.5 Ω, ID = 40 A, L= 65.7 μH, inductive load",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Rise Time",
"symbol": "tr",
"kind": "timing",
"unit": "ns",
"min": null,
"typ": 18,
"max": null,
"conditions": "VDD = 800 V, VGS = -4 V/15 V, RG(ext) = 2.5 Ω, ID = 40 A, L= 65.7 μH, inductive load",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Turn-Off Delay Time",
"symbol": "td(off)",
"kind": "timing",
"unit": "ns",
"min": null,
"typ": 32,
"max": null,
"conditions": "VDD = 800 V, VGS = -4 V/15 V, RG(ext) = 2.5 Ω, ID = 40 A, L= 65.7 μH, inductive load",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Fall Time",
"symbol": "tf",
"kind": "timing",
"unit": "ns",
"min": null,
"typ": 9,
"max": null,
"conditions": "VDD = 800 V, VGS = -4 V/15 V, RG(ext) = 2.5 Ω, ID = 40 A, L= 65.7 μH, inductive load",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Internal Gate Resistance",
"symbol": "RG(int)",
"kind": "electrical",
"unit": "Ω",
"min": null,
"typ": 1.7,
"max": null,
"conditions": "f = 1 MHz, VAC = 25 mV",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Gate to Source Charge",
"symbol": "Qgs",
"kind": "electrical",
"unit": "nC",
"min": null,
"typ": 40,
"max": null,
"conditions": "VDS = 800 V, VGS = -4 V/15 V, ID = 40 A",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Gate to Drain Charge",
"symbol": "Qgd",
"kind": "electrical",
"unit": "nC",
"min": null,
"typ": 34,
"max": null,
"conditions": "VDS = 800 V, VGS = -4 V/15 V, ID = 40 A",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Total Gate Charge",
"symbol": "Qg",
"kind": "electrical",
"unit": "nC",
"min": null,
"typ": 118,
"max": null,
"conditions": "VDS = 800 V, VGS = -4 V/15 V, ID = 40 A",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Diode Forward Voltage (TJ = 25 °C)",
"symbol": "VSD",
"kind": "electrical",
"unit": "V",
"min": null,
"typ": 4.6,
"max": null,
"conditions": "VGS = -4 V, ISD = 20 A, TJ = 25 °C",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Diode Forward Voltage (TJ = 175 °C)",
"symbol": "VSD",
"kind": "electrical",
"unit": "V",
"min": null,
"typ": 4.2,
"max": null,
"conditions": "VGS = -4 V, ISD = 20 A, TJ = 175 °C",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Continuous Diode Forward Current",
"symbol": "IS",
"kind": "electrical",
"unit": "A",
"min": null,
"typ": 62,
"max": null,
"conditions": "VGS = -4 V, TC = 25˚C",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Diode Pulse Current",
"symbol": "IS, pulse",
"kind": "electrical",
"unit": "A",
"min": null,
"typ": null,
"max": 120,
"conditions": "VGS = -4 V, pulse width tP limited by Tjmax",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Reverse Recovery Time",
"symbol": "trr",
"kind": "timing",
"unit": "ns",
"min": null,
"typ": 27,
"max": null,
"conditions": "VGS = -4 V, ISD = 40 A, VR = 800 V, dif/dt = 2250 A/µs, TJ = 175 °C",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Reverse Recovery Charge",
"symbol": "Qrr",
"kind": "electrical",
"unit": "nC",
"min": null,
"typ": 478,
"max": null,
"conditions": "VGS = -4 V, ISD = 40 A, VR = 800 V, dif/dt = 2250 A/µs, TJ = 175 °C",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Peak Reverse Recovery Current",
"symbol": "Irrm",
"kind": "electrical",
"unit": "A",
"min": null,
"typ": 27,
"max": null,
"conditions": "VGS = -4 V, ISD = 40 A, VR = 800 V, dif/dt = 2250 A/µs, TJ = 175 °C",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Thermal Resistance from Junction to Case",
"symbol": "RθJC",
"kind": "thermal",
"unit": "°C/W",
"min": null,
"typ": 0.45,
"max": null,
"conditions": "Fig. 21",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Thermal Resistance From Junction to Ambient",
"symbol": "RθJA",
"kind": "thermal",
"unit": "°C/W",
"min": null,
"typ": 40,
"max": null,
"conditions": "",
"source_page": 2,
"source": "datasheet"
}
]
}
},
"variants": [],
"sections": [
"hero",
"viewers",
"readme",
"breadcrumbs",
"info"
],
"discovery_triggers": [
"hsctwa60n12g24ag"
],
"discovery_pitch": "HSCTWA60N12G24AG (HXY MOSFET) component page: datasheet pinout, KiCad symbol, footprint and 3D.",
"author": {
"name": "Ray",
"email": "[email protected]"
},
"dependencies": {},
"hero": {
"type": "image",
"path": "docs/hero.png"
},
"files": [
"page.json",
"README.md",
"hsctwa60n12g24ag.kicad_sym",
"hsctwa60n12g24ag.kicad_mod",
"hsctwa60n12g24ag.glb",
"hsctwa60n12g24ag.step",
"hsctwa60n12g24ag.lbr",
"docs/hero.png",
"docs/hsctwa60n12g24ag-datasheet.pdf",
"viewers/symbol.html",
"viewers/footprint.html",
"hsctwa60n12g24ag-hero.glb",
"hsctwa60n12g24ag-hero.overlay.json",
"hsctwa60n12g24ag-etched.glb"
],
"visibility": {
"public": true
}
}