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HSCTWA60N12G24AG

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HXY MOSFET Silicon Carbide Field Effect Transistor (MOSFET), TO-247-4L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componentsilicon carbide (sic) deviceshsctwa60n12g24agfactory-2.0.0extractor-text

Changed since verified HSCTWA60N12G24AG

by Ray · last 4 Nov 2026 · 1 record · files changed since
SymbolFootprint3D modelPins

Verification log 1 record

4 Nov 2026RayPublished by the parts factory: tier lcsc, 4 pinschanged since
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: HSCTWA60N12G24AG · TO-247-4L · 4 pins
  • ✓copper: 4 copper pads, none touching another net
  • ✓datasheet: all 4 pin names found in the 11-page datasheet
  • •distributor (warn): no ['digikey', 'mouser'] number
  • ✓family: TO-247-4_Vertical
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-qc1zhjqa/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • •package_fit (skip): no component.package_dims on the page: the model is unchecked against the datasheet drawing
  • ✓pads: 4 pins = 4 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 4 pins agree
  • ✓visibility: public, source open
Evidencedatasheet
Verified files! hsctwa60n12g24ag.kicad_sym✓ hsctwa60n12g24ag.kicad_mod✓ hsctwa60n12g24ag.step
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Ray Publish 0.1.0 6284782 19h ago

HSCTWA60N12G24AG

HXY MOSFET · Silicon Carbide Field Effect Transistor (MOSFET) · TO-247-4L

HSCTWA60N12G24AG from HXY MOSFET, in a TO-247-4L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Drain passive Drain terminal, also the metal tab; rated VDSmax 1200 V at VGS = 0 V and ID = 100 μA, with continuous ID of 63 A at VGS = 15 V and TC = 25 ˚C.
2 Power Source passive Power source terminal carrying the main switching current, kept separate from the driver source pin per the package feature list.
3 Driver Source passive Separate driver source pin for the gate drive return, provided to reduce switching losses and minimize gate ringing.
4 Gate input Gate input with static limits of -4/+15 V (MOSFET can also safely operate at 0/+15 V) and dynamic limits of -8/+19 V for AC f > 1 Hz, or -4/+19 V when using the body diode.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package TO-247-4L
Category Silicon Carbide (SiC) Devices
Pins 4

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSmax 1200 V VGS = 0 V, ID = 100 μA 1
Gate-Source Voltage (dynamic) VGSmax -8 19 V AC (f >1 Hz) Note 1 1
Gate-Source Voltage (static) VGSop -4 15 V Static Note 2 1
Continuous Drain Current ID 63 A VGS = 15 V, TC = 25˚C 1
Continuous Drain Current ID 48 A VGS = 15 V, TC = 100˚C 1
Pulsed Drain Current ID(pulse) 120 A Pulse width tP limited by Tjmax 1
Power Dissipation PD 283 W TC =25˚C, TJ = 175 ˚C 1
Operating Junction and Storage Temperature TJ, Tstg -40 175 ˚C 1
Solder Temperature TL 260 ˚C 1.6mm (0.063”) from case for 10s 1
Drain-Source Breakdown Voltage V(BR)DSS 1200 V VGS = 0 V, ID = 100 μA 2
Gate Threshold Voltage VGS(th) 1.8 2.5 3.6 V VDS = VGS, ID = 11.5 mA 2
Gate Threshold Voltage (TJ = 175ºC) VGS(th) 2 V VDS = VGS, ID = 11.5 mA, TJ = 175ºC 2
Zero Gate Voltage Drain Current IDSS 1 50 μA VDS = 1200 V, VGS = 0 V 2
Gate-Source Leakage Current IGSS 10 250 nA VGS = 15 V, VDS = 0 V 2
Drain-Source On-State Resistance RDS(on) 23 32 43 mΩ VGS = 15 V, ID = 40 A 2
Drain-Source On-State Resistance (TJ = 175ºC) RDS(on) 57.6 mΩ VGS = 15 V, ID = 40 A, TJ = 175ºC 2
Transconductance gfs 27 S VDS= 20 V, IDS= 40 A 2
Transconductance (TJ = 175ºC) gfs 22 S VDS= 20 V, IDS= 40 A, TJ = 175ºC 2
Input Capacitance Ciss 3357 pF VGS = 0 V, VDS = 1000 V, f=100kHz, VAC = 25 mV 2
Output Capacitance Coss 129 pF VGS = 0 V, VDS = 1000 V, f=100kHz, VAC = 25 mV 2
Reverse Transfer Capacitance Crss 8 pF VGS = 0 V, VDS = 1000 V, f=100kHz, VAC = 25 mV 2
Coss Stored Energy Eoss 76 μJ Fig. 16 2
Turn-On Switching Energy (SiC Diode FWD) EON 367 μJ VDS = 800 V, VGS = -4 V/+15 V, ID = 40 A, RG(ext) = 2.5Ω, L= 65.7 μH, Tj = 175ºC 2
Turn Off Switching Energy (SiC Diode FWD) EOFF 123 μJ VDS = 800 V, VGS = -4 V/+15 V, ID = 40 A, RG(ext) = 2.5Ω, L= 65.7 μH, Tj = 175ºC 2
Turn-On Switching Energy (Body Diode FWD) EON 955 μJ VDS = 800 V, VGS = -4 V/+15 V, ID = 40 A, RG(ext) = 2.5Ω, L= 65.7 μH, Tj = 175ºC 2
Turn Off Switching Energy (Body Diode FWD) EOFF 107 μJ VDS = 800 V, VGS = -4 V/+15 V, ID = 40 A, RG(ext) = 2.5Ω, L= 65.7 μH, Tj = 175ºC 2
Turn-On Delay Time td(on) 25 ns VDD = 800 V, VGS = -4 V/15 V, RG(ext) = 2.5 Ω, ID = 40 A, L= 65.7 μH, inductive load 2
Rise Time tr 18 ns VDD = 800 V, VGS = -4 V/15 V, RG(ext) = 2.5 Ω, ID = 40 A, L= 65.7 μH, inductive load 2
Turn-Off Delay Time td(off) 32 ns VDD = 800 V, VGS = -4 V/15 V, RG(ext) = 2.5 Ω, ID = 40 A, L= 65.7 μH, inductive load 2
Fall Time tf 9 ns VDD = 800 V, VGS = -4 V/15 V, RG(ext) = 2.5 Ω, ID = 40 A, L= 65.7 μH, inductive load 2
Internal Gate Resistance RG(int) 1.7 Ω f = 1 MHz, VAC = 25 mV 2
Gate to Source Charge Qgs 40 nC VDS = 800 V, VGS = -4 V/15 V, ID = 40 A 2
Gate to Drain Charge Qgd 34 nC VDS = 800 V, VGS = -4 V/15 V, ID = 40 A 2
Total Gate Charge Qg 118 nC VDS = 800 V, VGS = -4 V/15 V, ID = 40 A 2
Diode Forward Voltage (TJ = 25 °C) VSD 4.6 V VGS = -4 V, ISD = 20 A, TJ = 25 °C 2
Diode Forward Voltage (TJ = 175 °C) VSD 4.2 V VGS = -4 V, ISD = 20 A, TJ = 175 °C 2
Continuous Diode Forward Current IS 62 A VGS = -4 V, TC = 25˚C 2
Diode Pulse Current IS, pulse 120 A VGS = -4 V, pulse width tP limited by Tjmax 2
Reverse Recovery Time trr 27 ns VGS = -4 V, ISD = 40 A, VR = 800 V, dif/dt = 2250 A/µs, TJ = 175 °C 2
Reverse Recovery Charge Qrr 478 nC VGS = -4 V, ISD = 40 A, VR = 800 V, dif/dt = 2250 A/µs, TJ = 175 °C 2
Peak Reverse Recovery Current Irrm 27 A VGS = -4 V, ISD = 40 A, VR = 800 V, dif/dt = 2250 A/µs, TJ = 175 °C 2
Thermal Resistance from Junction to Case RθJC 0.45 °C/W Fig. 21 2
Thermal Resistance From Junction to Ambient RθJA 40 °C/W 2

CAD (KiCad official)

  • Symbol: HSCTWA60N12G24AG
  • Footprint: Package_TO_SOT_THT:TO-247-4_Vertical
  • 3D model: TO-247-4L (KiCad packages3D, STEP)
  • 3D model files: hsctwa60n12g24ag-etched.step / hsctwa60n12g24ag-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hsctwa60n12g24ag.step / hsctwa60n12g24ag.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (11 pp, sha256 3f54410f0dd08f7c, retrieved 2026-11-04, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF