# HSCT20N120

**HXY MOSFET** · Silicon Carbide Field Effect Transistor (MOSFET) · TO-247

HSCT20N120 from HXY MOSFET, in a TO-247. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; drive limits are -4/+18 V recommended and -8/+22 V absolute maximum dynamic, with a typical threshold of 3.1 V (2 V min, 4 V max at ID=2.3 mA). |
| 2 | D | passive | Drain; rated for 1200 V VDS and 17 A continuous at TC=25°C (12 A at 100°C), 34 A pulsed. |
| 3 | S | passive | Source; power source terminal connected to the body diode anode in the symbol, with the datasheet giving 1.29 °C/W RthJC. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | TO-247 |
| Category | Silicon Carbide (SiC) Devices |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDS |  |  | 1200 | V |  | 1 |
| Continuous drain current | ID |  |  | 17 | A | TC = 25°C | 1 |
| Continuous drain current | ID |  |  | 12 | A | TC = 100°C | 1 |
| Pulsed drain current | ID pulse |  |  | 34 | A | TC = 25°C, tp limited by Tjmax | 1 |
| Gate-Source voltage | VGS | -4 |  | 18 | V |  | 1 |
| Gate-Source voltage (dynamic, absolute maximum values) | VGSmax | -8 |  | 22 | V |  | 1 |
| Power dissipation | Ptot |  |  | 116 | W | TC = 25°C | 1 |
| Avalanche energy, single pulse | EAS |  |  | 1000 | mJ | L = 10mH | 1 |
| Operating junction and storage temperature | Tj, Tstg | -55 |  | 175 | °C |  | 1 |
| Thermal resistance, junction to case | RthJC |  |  | 1.29 | °C/W |  | 2 |
| Thermal resistance, junction to ambient | RthJA |  |  | 40 | °C/W |  | 2 |
| Drain-source breakdown voltage | BVDSS | 1200 |  |  | V | VGS=0V, ID=100uA | 2 |

## CAD (KiCad official)

- Symbol: `HSCT20N120`
- Footprint: `Package_TO_SOT_THT:TO-247-3_Vertical`
- 3D model: TO-247 (KiCad packages3D, STEP)
- 3D model files: `hsct20n120-etched.step` / `hsct20n120-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `hsct20n120.step` / `hsct20n120.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HXY MOSFET datasheet](docs/hsct20n120-datasheet.pdf) (9 pp, sha256 `88321a9ae660513a`, retrieved 2026-11-07, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/hsct20n120-datasheet.pdf)