component
HSCT20N120
Public Made by Adomby adom
HXY MOSFET Silicon Carbide Field Effect Transistor (MOSFET), TO-247. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 2h ago |
| viewers | 2h ago |
| hsct20n120-etched.glb | 2h ago |
| hsct20n120-etched.step | 2h ago |
| hsct20n120-hero.glb | 2h ago |
| hsct20n120-hero.overlay.json | 2h ago |
| hsct20n120.glb | 2h ago |
| hsct20n120.kicad_mod | 2h ago |
| hsct20n120.kicad_sym | 2h ago |
| hsct20n120.lbr | 2h ago |
| hsct20n120.step | 2h ago |
| package.json | 2h ago |
| page.json | 2h ago |
| README.md | 2h ago |
| verification.json | 2h ago |
HSCT20N120
HXY MOSFET · Silicon Carbide Field Effect Transistor (MOSFET) · TO-247
HSCT20N120 from HXY MOSFET, in a TO-247. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; drive limits are -4/+18 V recommended and -8/+22 V absolute maximum dynamic, with a typical threshold of 3.1 V (2 V min, 4 V max at ID=2.3 mA). |
| 2 | D | passive | Drain; rated for 1200 V VDS and 17 A continuous at TC=25°C (12 A at 100°C), 34 A pulsed. |
| 3 | S | passive | Source; power source terminal connected to the body diode anode in the symbol, with the datasheet giving 1.29 °C/W RthJC. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | TO-247 |
| Category | Silicon Carbide (SiC) Devices |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDS | 1200 | V | 1 | |||
| Continuous drain current | ID | 17 | A | TC = 25°C | 1 | ||
| Continuous drain current | ID | 12 | A | TC = 100°C | 1 | ||
| Pulsed drain current | ID pulse | 34 | A | TC = 25°C, tp limited by Tjmax | 1 | ||
| Gate-Source voltage | VGS | -4 | 18 | V | 1 | ||
| Gate-Source voltage (dynamic, absolute maximum values) | VGSmax | -8 | 22 | V | 1 | ||
| Power dissipation | Ptot | 116 | W | TC = 25°C | 1 | ||
| Avalanche energy, single pulse | EAS | 1000 | mJ | L = 10mH | 1 | ||
| Operating junction and storage temperature | Tj, Tstg | -55 | 175 | °C | 1 | ||
| Thermal resistance, junction to case | RthJC | 1.29 | °C/W | 2 | |||
| Thermal resistance, junction to ambient | RthJA | 40 | °C/W | 2 | |||
| Drain-source breakdown voltage | BVDSS | 1200 | V | VGS=0V, ID=100uA | 2 |
CAD (KiCad official)
- Symbol:
HSCT20N120 - Footprint:
Package_TO_SOT_THT:TO-247-3_Vertical - 3D model: TO-247 (KiCad packages3D, STEP)
- 3D model files:
hsct20n120-etched.step/hsct20n120-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hsct20n120.step/hsct20n120.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (9 pp, sha256
88321a9ae660513a, retrieved 2026-11-07, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).