# HSCT055W65G34AG

**HXY MOSFET** · Silicon Carbide Field Effect Transistor (MOSFET) · TO-247-4L

HSCT055W65G34AG from HXY MOSFET, in a TO-247-4L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Drain | passive | Drain terminal, which is also the mounting tab, with a drain-source voltage rating of 650 V at TC = 25 ˚C. |
| 2 | Power Source | passive | Power source terminal for the MOSFET main current path, separate from the driver source pin. |
| 3 | Driver Source | passive | Separate driver source pin, provided so the package has a source connection distinct from the power source pin. |
| 4 | Gate | input | Gate input with a recommended turn-on voltage of 15 V and turn-off voltage of -4 V, and transient limits of -8/+19 V under events shorter than 100 ns. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | TO-247-4L |
| Category | Silicon Carbide (SiC) Devices |
| Pins | 4 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V(BR)DSS | 650 |  |  | V | VGS = 0 V, ID = 100 μA | 2 |
| Gate Threshold Voltage | VGS(th) | 1.8 | 2.3 | 3.6 | V | VDS = VGS, ID = 5 mA | 2 |
| Zero Gate Voltage Drain Current | IDSS |  | 1 | 50 | μA | VDS = 650 V, VGS = 0 V | 2 |
| Gate-Source Leakage Current | IGSS |  | 10 | 250 | nA | VGS = 15 V, VDS = 0 V | 2 |
| Drain-Source On-State Resistance | RDS(on) | 42 | 60 | 79 | mΩ | VGS = 15 V, ID = 13.2 A | 2 |
| Gate-Source Recommended Turn-On Voltage | VGSon |  | 15 |  | V |  | 2 |
| Gate-Source Recommended Turn-Off Voltage | VGSoff |  | -4 |  | V |  | 2 |
| Drain-Source Voltage | VDSS |  |  | 650 | V | TC = 25 ˚C | 1 |
| Gate-Source Voltage (transient) | VGS | -8 |  | 19 | V | Under transient events < 100 ns | 1 |
| Continuous Drain Current | ID |  |  | 37 | A | VGS = 15 V, TC = 25˚C | 1 |
| Continuous Drain Current | ID |  |  | 27 | A | VGS = 15 V, TC = 100˚C | 1 |
| Pulsed Drain Current | ID(pulse) |  |  | 99 | A | Pulse width tP limited by Tjmax | 1 |
| Power Dissipation | PD |  |  | 150 | W | TC = 25˚C, TJ = 175 ˚C | 1 |
| Operating Junction and Storage Temperature | TJ, Tstg | -40 |  | 175 | ˚C |  | 1 |
| Solder Temperature | TL |  |  | 260 | ˚C | 1.6 mm (0.063") from case for 10 s | 1 |
| Mounting Torque | Md |  |  | 1 | Nm | M3 or 6-32 screw | 1 |
| Mounting Torque | Md |  |  | 8.8 | lbf-in | M3 or 6-32 screw | 1 |
| Thermal Resistance from Junction to Case | RθJC |  | 0.99 |  | °C/W |  | 3 |
| Thermal Resistance from Junction to Ambient | RθJA |  | 40 |  | °C/W |  | 3 |

## CAD (KiCad official)

- Symbol: `HSCT055W65G34AG`
- Footprint: `Package_TO_SOT_THT:TO-247-4_Vertical`
- 3D model: TO-247-4L (KiCad packages3D, STEP)
- 3D model files: `hsct055w65g34ag-etched.step` / `hsct055w65g34ag-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `hsct055w65g34ag.step` / `hsct055w65g34ag.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HXY MOSFET datasheet](docs/hsct055w65g34ag-datasheet.pdf) (12 pp, sha256 `333e4104e6f55775`, retrieved 2026-11-04, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/hsct055w65g34ag-datasheet.pdf)