component

HSCT055W65G34AG

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by adom

HXY MOSFET Silicon Carbide Field Effect Transistor (MOSFET), TO-247-4L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componentsilicon carbide (sic) deviceshsct055w65g34agfactory-2.0.0extractor-text

Changed since verified HSCT055W65G34AG

by Ray · last 4 Nov 2026 · 1 record · files changed since
SymbolFootprint3D modelPins

Verification log 1 record

4 Nov 2026RayPublished by the parts factory: tier lcsc, 4 pinschanged since
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: HSCT055W65G34AG · TO-247-4L · 4 pins
  • ✓copper: 4 copper pads, none touching another net
  • ✓datasheet: all 4 pin names found in the 12-page datasheet
  • •distributor (warn): no ['digikey', 'mouser'] number
  • ✓family: TO-247-4_Vertical
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-enpxk0l1/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • •package_fit (skip): no component.package_dims on the page: the model is unchecked against the datasheet drawing
  • ✓pads: 4 pins = 4 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 4 pins agree
  • ✓visibility: public, source open
Evidencedatasheet
Verified files! hsct055w65g34ag.kicad_sym✓ hsct055w65g34ag.kicad_mod✓ hsct055w65g34ag.step
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Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 16h ago
viewers hsct055w65g34ag: symbol repaired (body fitted to the names) · Ray 6h ago
hsct055w65g34ag-etched.glb Publish 0.1.0 · Ray 16h ago
hsct055w65g34ag-etched.step hsct055w65g34ag: factory component page (tier=lcsc) · Ray 16h ago
hsct055w65g34ag-hero.glb hsct055w65g34ag: hero GLB from the etched model (keeps the MPN mark) · Ray 16h ago
hsct055w65g34ag-hero.overlay.json Publish 0.1.0 · Ray 16h ago
hsct055w65g34ag.glb Publish 0.1.0 · Ray 16h ago
hsct055w65g34ag.kicad_mod Publish 0.1.0 · Ray 16h ago
hsct055w65g34ag.kicad_sym hsct055w65g34ag: symbol repaired (body fitted to the names) · Ray 6h ago
hsct055w65g34ag.lbr hsct055w65g34ag: symbol repaired (body fitted to the names) · Ray 6h ago
hsct055w65g34ag.step Publish 0.1.0 · Ray 16h ago
package.json Publish 0.1.0 · Ray 16h ago
page.json Set visibility: public · Ray 16h ago
README.md Publish 0.1.0 · Ray 16h ago
verification.json Verified: Published by the parts factory: tier lcsc, 4 pins · Ray 16h ago

HSCT055W65G34AG

HXY MOSFET · Silicon Carbide Field Effect Transistor (MOSFET) · TO-247-4L

HSCT055W65G34AG from HXY MOSFET, in a TO-247-4L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Drain passive Drain terminal, which is also the mounting tab, with a drain-source voltage rating of 650 V at TC = 25 ˚C.
2 Power Source passive Power source terminal for the MOSFET main current path, separate from the driver source pin.
3 Driver Source passive Separate driver source pin, provided so the package has a source connection distinct from the power source pin.
4 Gate input Gate input with a recommended turn-on voltage of 15 V and turn-off voltage of -4 V, and transient limits of -8/+19 V under events shorter than 100 ns.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package TO-247-4L
Category Silicon Carbide (SiC) Devices
Pins 4

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage V(BR)DSS 650 V VGS = 0 V, ID = 100 μA 2
Gate Threshold Voltage VGS(th) 1.8 2.3 3.6 V VDS = VGS, ID = 5 mA 2
Zero Gate Voltage Drain Current IDSS 1 50 μA VDS = 650 V, VGS = 0 V 2
Gate-Source Leakage Current IGSS 10 250 nA VGS = 15 V, VDS = 0 V 2
Drain-Source On-State Resistance RDS(on) 42 60 79 mΩ VGS = 15 V, ID = 13.2 A 2
Gate-Source Recommended Turn-On Voltage VGSon 15 V 2
Gate-Source Recommended Turn-Off Voltage VGSoff -4 V 2
Drain-Source Voltage VDSS 650 V TC = 25 ˚C 1
Gate-Source Voltage (transient) VGS -8 19 V Under transient events < 100 ns 1
Continuous Drain Current ID 37 A VGS = 15 V, TC = 25˚C 1
Continuous Drain Current ID 27 A VGS = 15 V, TC = 100˚C 1
Pulsed Drain Current ID(pulse) 99 A Pulse width tP limited by Tjmax 1
Power Dissipation PD 150 W TC = 25˚C, TJ = 175 ˚C 1
Operating Junction and Storage Temperature TJ, Tstg -40 175 ˚C 1
Solder Temperature TL 260 ˚C 1.6 mm (0.063") from case for 10 s 1
Mounting Torque Md 1 Nm M3 or 6-32 screw 1
Mounting Torque Md 8.8 lbf-in M3 or 6-32 screw 1
Thermal Resistance from Junction to Case RθJC 0.99 °C/W 3
Thermal Resistance from Junction to Ambient RθJA 40 °C/W 3

CAD (KiCad official)

  • Symbol: HSCT055W65G34AG
  • Footprint: Package_TO_SOT_THT:TO-247-4_Vertical
  • 3D model: TO-247-4L (KiCad packages3D, STEP)
  • 3D model files: hsct055w65g34ag-etched.step / hsct055w65g34ag-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hsct055w65g34ag.step / hsct055w65g34ag.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (12 pp, sha256 333e4104e6f55775, retrieved 2026-11-04, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF