HPJSD03LCFN2

HXY MOSFET · ESD And Surge Protection (TVS/ESD) · DFN1006-2L

HPJSD03LCFN2 from HXY MOSFET, in a DFN1006-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	1	passive	Terminal 1 of an unpolarised bidirectional ESD/TVS diode; either orientation.
2	2	passive	Terminal 2 of an unpolarised bidirectional ESD/TVS diode; either orientation.

Key specifications

Parameter	Value
Manufacturer	HXY MOSFET
Package	DFN1006-2L
Category	Circuit Protection
Pins	2

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Peak pulse power	PPP			100	W	tp = 8/20 μs	1
Maximum lead temperature for soldering	TL			260	°C	during 10 s	1
Storage temperature range	Tstg	-55		150	°C		1
Operating temperature range	Top	-55		150	°C		1
Maximum junction temperature	Tj			150	°C		1
ESD IEC61000-4-2 air discharge		-30		30	KV	IEC61000-4-2 (ESD) air discharge	1
ESD IEC61000-4-2 contact discharge		-30		30	KV	IEC61000-4-2 (ESD) contact discharge	1
EFT IEC61000-4-4 current				40	A	IEC61000-4-4 (EFT)	1
Peak pulse power (surge per Figure 1)	PPK			100	W	Surge current waveform per Figure 1 (Note 2)	2
Reverse stand-off voltage	VRWM			3.3	V		2
Breakdown voltage (min)	VBR	5			V	IT = 1.0 mA; VBR measured with pulse test current at 25 °C (Note 1)	2
Reverse leakage current	IR			0.05	A	@ VRWM	2
Clamping voltage at maximum IPP	VC			11	V	@ maximum IPP (Note 2)	2
Dynamic resistance	RDYN		0.2		Ω	@ tp = 100 ns (TLP)	2
Capacitance	C		15		pF		2

CAD (KiCad official)

Symbol: HPJSD03LCFN2
Footprint: Diode_SMD:D_SOD-882
3D model: DFN1006-2L (KiCad packages3D, STEP)
3D model files: hpjsd03lcfn2-etched.step / hpjsd03lcfn2-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hpjsd03lcfn2.step / hpjsd03lcfn2.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: HXY MOSFET datasheet (4 pp, sha256 36b228c235748ae5, retrieved 2026-10-14, tier: lcsc)
Extractor: parts-factory 2.0.0 / extract_pins, primary two-terminal convention (convention), consensus off (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF

# HPJSD03LCFN2

**HXY MOSFET** · ESD And Surge Protection (TVS/ESD) · DFN1006-2L

HPJSD03LCFN2 from HXY MOSFET, in a DFN1006-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | 1 | passive | Terminal 1 of an unpolarised bidirectional ESD/TVS diode; either orientation. |
| 2 | 2 | passive | Terminal 2 of an unpolarised bidirectional ESD/TVS diode; either orientation. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | DFN1006-2L |
| Category | Circuit Protection |
| Pins | 2 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Peak pulse power | PPP |  |  | 100 | W | tp = 8/20 μs | 1 |
| Maximum lead temperature for soldering | TL |  |  | 260 | °C | during 10 s | 1 |
| Storage temperature range | Tstg | -55 |  | 150 | °C |  | 1 |
| Operating temperature range | Top | -55 |  | 150 | °C |  | 1 |
| Maximum junction temperature | Tj |  |  | 150 | °C |  | 1 |
| ESD IEC61000-4-2 air discharge |  | -30 |  | 30 | KV | IEC61000-4-2 (ESD) air discharge | 1 |
| ESD IEC61000-4-2 contact discharge |  | -30 |  | 30 | KV | IEC61000-4-2 (ESD) contact discharge | 1 |
| EFT IEC61000-4-4 current |  |  |  | 40 | A | IEC61000-4-4 (EFT) | 1 |
| Peak pulse power (surge per Figure 1) | PPK |  |  | 100 | W | Surge current waveform per Figure 1 (Note 2) | 2 |
| Reverse stand-off voltage | VRWM |  |  | 3.3 | V |  | 2 |
| Breakdown voltage (min) | VBR | 5 |  |  | V | IT = 1.0 mA; VBR measured with pulse test current at 25 °C (Note 1) | 2 |
| Reverse leakage current | IR |  |  | 0.05 | A | @ VRWM | 2 |
| Clamping voltage at maximum IPP | VC |  |  | 11 | V | @ maximum IPP (Note 2) | 2 |
| Dynamic resistance | RDYN |  | 0.2 |  | Ω | @ tp = 100 ns (TLP) | 2 |
| Capacitance | C |  | 15 |  | pF |  | 2 |

## CAD (KiCad official)

- Symbol: `HPJSD03LCFN2`
- Footprint: `Diode_SMD:D_SOD-882`
- 3D model: DFN1006-2L (KiCad packages3D, STEP)
- 3D model files: `hpjsd03lcfn2-etched.step` / `hpjsd03lcfn2-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `hpjsd03lcfn2.step` / `hpjsd03lcfn2.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HXY MOSFET datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603009259210747904) (4 pp, sha256 `36b228c235748ae5`, retrieved 2026-10-14, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins`, primary `two-terminal convention` (convention), consensus `off` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/hpjsd03lcfn2-datasheet.pdf)