component
HPJSD03LCFN2
Public Made by Adomby adom
HXY MOSFET ESD And Surge Protection (TVS/ESD), DFN1006-2L. Unpolarised two-terminal part: the datasheet prints no pin numbers, so pins 1 and 2 follow the library convention, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownHPJSD03LCFN2
HXY MOSFET · ESD And Surge Protection (TVS/ESD) · DFN1006-2L
HPJSD03LCFN2 from HXY MOSFET, in a DFN1006-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | 1 | passive | Terminal 1 of an unpolarised bidirectional ESD/TVS diode; either orientation. |
| 2 | 2 | passive | Terminal 2 of an unpolarised bidirectional ESD/TVS diode; either orientation. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | DFN1006-2L |
| Category | Circuit Protection |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Peak pulse power | PPP | 100 | W | tp = 8/20 μs | 1 | ||
| Maximum lead temperature for soldering | TL | 260 | °C | during 10 s | 1 | ||
| Storage temperature range | Tstg | -55 | 150 | °C | 1 | ||
| Operating temperature range | Top | -55 | 150 | °C | 1 | ||
| Maximum junction temperature | Tj | 150 | °C | 1 | |||
| ESD IEC61000-4-2 air discharge | -30 | 30 | KV | IEC61000-4-2 (ESD) air discharge | 1 | ||
| ESD IEC61000-4-2 contact discharge | -30 | 30 | KV | IEC61000-4-2 (ESD) contact discharge | 1 | ||
| EFT IEC61000-4-4 current | 40 | A | IEC61000-4-4 (EFT) | 1 | |||
| Peak pulse power (surge per Figure 1) | PPK | 100 | W | Surge current waveform per Figure 1 (Note 2) | 2 | ||
| Reverse stand-off voltage | VRWM | 3.3 | V | 2 | |||
| Breakdown voltage (min) | VBR | 5 | V | IT = 1.0 mA; VBR measured with pulse test current at 25 °C (Note 1) | 2 | ||
| Reverse leakage current | IR | 0.05 | A | @ VRWM | 2 | ||
| Clamping voltage at maximum IPP | VC | 11 | V | @ maximum IPP (Note 2) | 2 | ||
| Dynamic resistance | RDYN | 0.2 | Ω | @ tp = 100 ns (TLP) | 2 | ||
| Capacitance | C | 15 | pF | 2 |
CAD (KiCad official)
- Symbol:
HPJSD03LCFN2 - Footprint:
Diode_SMD:D_SOD-882 - 3D model: DFN1006-2L (KiCad packages3D, STEP)
- 3D model files:
hpjsd03lcfn2-etched.step/hpjsd03lcfn2-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hpjsd03lcfn2.step/hpjsd03lcfn2.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (4 pp, sha256
36b228c235748ae5, retrieved 2026-10-14, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins, primarytwo-terminal convention(convention), consensusoff(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).