# HPESDWC2FD5VB

**HXY MOSFET** · Electrostatic And Surge Protection (TVS/ESD) · DFN1006-2L

HPESDWC2FD5VB from HXY MOSFET, in a DFN1006-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | 1 | passive | One terminal of the bi-directional ESD protection diode, connected to the protected line or ground, with 5 V stand-off voltage (VRWM) and 2.5 pF typical capacitance. |
| 2 | 2 | passive | Second terminal of the bi-directional ESD protection diode, connected to the protected line or ground, with 5 V stand-off voltage (VRWM) and IEC61000-4-2 protection of ±15 kV contact and ±10 kV air. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | DFN1006-2L |
| Category | Circuit Protection |
| Pins | 2 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Reverse Stand-Off Voltage | VRWM |  |  | 5 | V |  | 2 |
| Reverse Leakage Current | IR |  |  | 1 | μA | @ VRWM | 2 |
| Breakdown Voltage | VBR | 5.5 |  |  | V | @ IT = 1mA | 2 |
| Peak Pulse Current | IPP |  |  | 2.5 | A |  | 2 |
| Clamping Voltage | VC |  |  | 8.5 | V | @ IPP = 1A | 2 |
| Peak Pulse Power | PPK |  |  | 30 | W |  | 2 |
| Peak Pulse Power | PPP |  |  | 30 | W | tp = 8/20 μs | 1 |
| Maximum lead temperature for soldering | TL |  |  | 260 | °C | during 10s | 1 |
| Storage Temperature Range | Tstg | -55 |  | 150 | °C |  | 1 |
| Operating Temperature Range | Top | -55 |  | 150 | °C |  | 1 |
| Maximum junction temperature | Tj |  |  | 150 | °C |  | 1 |
| IEC61000-4-2 ESD air discharge | KV | -15 |  | 15 | kV | air discharge | 1 |
| IEC61000-4-2 ESD contact discharge | KV | -10 |  | 10 | kV | contact discharge | 1 |
| Capacitance | C |  | 2.5 |  | pF | VR=0V, f=1MHz | 2 |

## CAD (KiCad official)

- Symbol: `HPESDWC2FD5VB`
- Footprint: `Diode_SMD:D_SOD-882`
- 3D model: DFN1006-2L (KiCad packages3D, STEP)
- 3D model files: `hpesdwc2fd5vb-etched.step` / `hpesdwc2fd5vb-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `hpesdwc2fd5vb.step` / `hpesdwc2fd5vb.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HXY MOSFET datasheet](docs/hpesdwc2fd5vb-datasheet.pdf) (5 pp, sha256 `632e4eae0745f737`, retrieved 2026-10-27, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/hpesdwc2fd5vb-datasheet.pdf)