component
HPESDWC2FD5VB
Public Made by Adomby adom
HXY MOSFET Electrostatic And Surge Protection (TVS/ESD), DFN1006-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 13d ago |
| viewers | 5d ago |
| hpesdwc2fd5vb-etched.glb | 13d ago |
| hpesdwc2fd5vb-etched.step | 13d ago |
| hpesdwc2fd5vb-hero.glb | 13d ago |
| hpesdwc2fd5vb-hero.overlay.json | 13d ago |
| hpesdwc2fd5vb.glb | 13d ago |
| hpesdwc2fd5vb.kicad_mod | 13d ago |
| hpesdwc2fd5vb.kicad_sym | 5d ago |
| hpesdwc2fd5vb.lbr | 5d ago |
| hpesdwc2fd5vb.step | 13d ago |
| package.json | 13d ago |
| page.json | 13d ago |
| README.md | 13d ago |
HPESDWC2FD5VB
HXY MOSFET · Electrostatic And Surge Protection (TVS/ESD) · DFN1006-2L
HPESDWC2FD5VB from HXY MOSFET, in a DFN1006-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | 1 | passive | One terminal of the bi-directional ESD protection diode, connected to the protected line or ground, with 5 V stand-off voltage (VRWM) and 2.5 pF typical capacitance. |
| 2 | 2 | passive | Second terminal of the bi-directional ESD protection diode, connected to the protected line or ground, with 5 V stand-off voltage (VRWM) and IEC61000-4-2 protection of ±15 kV contact and ±10 kV air. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | DFN1006-2L |
| Category | Circuit Protection |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Reverse Stand-Off Voltage | VRWM | 5 | V | 2 | |||
| Reverse Leakage Current | IR | 1 | μA | @ VRWM | 2 | ||
| Breakdown Voltage | VBR | 5.5 | V | @ IT = 1mA | 2 | ||
| Peak Pulse Current | IPP | 2.5 | A | 2 | |||
| Clamping Voltage | VC | 8.5 | V | @ IPP = 1A | 2 | ||
| Peak Pulse Power | PPK | 30 | W | 2 | |||
| Peak Pulse Power | PPP | 30 | W | tp = 8/20 μs | 1 | ||
| Maximum lead temperature for soldering | TL | 260 | °C | during 10s | 1 | ||
| Storage Temperature Range | Tstg | -55 | 150 | °C | 1 | ||
| Operating Temperature Range | Top | -55 | 150 | °C | 1 | ||
| Maximum junction temperature | Tj | 150 | °C | 1 | |||
| IEC61000-4-2 ESD air discharge | KV | -15 | 15 | kV | air discharge | 1 | |
| IEC61000-4-2 ESD contact discharge | KV | -10 | 10 | kV | contact discharge | 1 | |
| Capacitance | C | 2.5 | pF | VR=0V, f=1MHz | 2 |
CAD (KiCad official)
- Symbol:
HPESDWC2FD5VB - Footprint:
Diode_SMD:D_SOD-882 - 3D model: DFN1006-2L (KiCad packages3D, STEP)
- 3D model files:
hpesdwc2fd5vb-etched.step/hpesdwc2fd5vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hpesdwc2fd5vb.step/hpesdwc2fd5vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (5 pp, sha256
632e4eae0745f737, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).