component
HPESD5V0V1BL
Public Made by Adomby adom
HXY MOSFET ESD And Surge Protection (TVS/ESD), DFN1006-2L. Unpolarised two-terminal part: the datasheet prints no pin numbers, so pins 1 and 2 follow the library convention, KiCad symbol/footprint/3D.
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HPESD5V0V1BL
HXY MOSFET · ESD And Surge Protection (TVS/ESD) · DFN1006-2L
HPESD5V0V1BL from HXY MOSFET, in a DFN1006-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | 1 | passive | Terminal 1 of an unpolarised bidirectional ESD/TVS diode; either orientation. |
| 2 | 2 | passive | Terminal 2 of an unpolarised bidirectional ESD/TVS diode; either orientation. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | DFN1006-2L |
| Category | Circuit Protection |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Peak Pulse Power (tp = 8/20μs) | PPP | 66 | tp = 8/20μs | 1 | |||
| Maximum lead temperature for soldering | TL | 260 | °C | during 10s | 1 | ||
| Storage Temperature Range | Tstg | -55 | 150 | °C | 1 | ||
| Operating Temperature Range | Top | -40 | 125 | °C | 1 | ||
| Maximum junction temperature | Tj | 150 | °C | 1 | |||
| IEC61000-4-2 (ESD) air discharge | -25 | 25 | KV | IEC61000-4-2 air discharge | 1 | ||
| IEC61000-4-2 (ESD) contact discharge | -20 | 20 | KV | IEC61000-4-2 contact discharge | 1 | ||
| Reverse leakage current | IR1 | 0.5 | A | @ VRWM | 2 | ||
| Reverse leakage current | IR2 | 0.3 | A | @ VR = 3.5V | 2 | ||
| Breakdown voltage | VBR | 5.6 | V | @ IT = 1.0 mA; pulse test at 25°C (Note 2) | 2 | ||
| Clamping voltage | VC | 8 | V | @ IPP = 1 A (Note 3) | 2 | ||
| Clamping voltage at max IPP | VC | 12 | V | @ MAX IPP (Note 3) | 2 | ||
| Peak pulse current | IPP | 5.5 | A | (Note 3) | 2 | ||
| Peak pulse power | PPK | 66 | W | (Note 3) | 2 |
CAD (KiCad official)
- Symbol:
HPESD5V0V1BL - Footprint:
Diode_SMD:D_SOD-882 - 3D model: DFN1006-2L (KiCad packages3D, STEP)
- 3D model files:
hpesd5v0v1bl-etched.step/hpesd5v0v1bl-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hpesd5v0v1bl.step/hpesd5v0v1bl.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (4 pp, sha256
83ba15f92cb2b402, retrieved 2026-10-15, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins, primarytwo-terminal convention(convention), consensusoff(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# HPESD5V0V1BL
**HXY MOSFET** · ESD And Surge Protection (TVS/ESD) · DFN1006-2L
HPESD5V0V1BL from HXY MOSFET, in a DFN1006-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | 1 | passive | Terminal 1 of an unpolarised bidirectional ESD/TVS diode; either orientation. |
| 2 | 2 | passive | Terminal 2 of an unpolarised bidirectional ESD/TVS diode; either orientation. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | DFN1006-2L |
| Category | Circuit Protection |
| Pins | 2 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Peak Pulse Power (tp = 8/20μs) | PPP | | | 66 | | tp = 8/20μs | 1 |
| Maximum lead temperature for soldering | TL | | | 260 | °C | during 10s | 1 |
| Storage Temperature Range | Tstg | -55 | | 150 | °C | | 1 |
| Operating Temperature Range | Top | -40 | | 125 | °C | | 1 |
| Maximum junction temperature | Tj | | | 150 | °C | | 1 |
| IEC61000-4-2 (ESD) air discharge | | -25 | | 25 | KV | IEC61000-4-2 air discharge | 1 |
| IEC61000-4-2 (ESD) contact discharge | | -20 | | 20 | KV | IEC61000-4-2 contact discharge | 1 |
| Reverse leakage current | IR1 | | | 0.5 | A | @ VRWM | 2 |
| Reverse leakage current | IR2 | | | 0.3 | A | @ VR = 3.5V | 2 |
| Breakdown voltage | VBR | 5.6 | | | V | @ IT = 1.0 mA; pulse test at 25°C (Note 2) | 2 |
| Clamping voltage | VC | | | 8 | V | @ IPP = 1 A (Note 3) | 2 |
| Clamping voltage at max IPP | VC | | | 12 | V | @ MAX IPP (Note 3) | 2 |
| Peak pulse current | IPP | | | 5.5 | A | (Note 3) | 2 |
| Peak pulse power | PPK | | | 66 | W | (Note 3) | 2 |
## CAD (KiCad official)
- Symbol: `HPESD5V0V1BL`
- Footprint: `Diode_SMD:D_SOD-882`
- 3D model: DFN1006-2L (KiCad packages3D, STEP)
- 3D model files: `hpesd5v0v1bl-etched.step` / `hpesd5v0v1bl-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `hpesd5v0v1bl.step` / `hpesd5v0v1bl.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [HXY MOSFET datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603008926111571968) (4 pp, sha256 `83ba15f92cb2b402`, retrieved 2026-10-15, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins`, primary `two-terminal convention` (convention), consensus `off` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/hpesd5v0v1bl-datasheet.pdf)