component
HPESD5V0V1BL
Public Made by Adomby adom
HXY MOSFET ESD And Surge Protection (TVS/ESD), DFN1006-2L. Unpolarised two-terminal part: the datasheet prints no pin numbers, so pins 1 and 2 follow the library convention, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownHPESD5V0V1BL
HXY MOSFET · ESD And Surge Protection (TVS/ESD) · DFN1006-2L
HPESD5V0V1BL from HXY MOSFET, in a DFN1006-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | 1 | passive | Terminal 1 of an unpolarised bidirectional ESD/TVS diode; either orientation. |
| 2 | 2 | passive | Terminal 2 of an unpolarised bidirectional ESD/TVS diode; either orientation. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | DFN1006-2L |
| Category | Circuit Protection |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Peak Pulse Power (tp = 8/20μs) | PPP | 66 | tp = 8/20μs | 1 | |||
| Maximum lead temperature for soldering | TL | 260 | °C | during 10s | 1 | ||
| Storage Temperature Range | Tstg | -55 | 150 | °C | 1 | ||
| Operating Temperature Range | Top | -40 | 125 | °C | 1 | ||
| Maximum junction temperature | Tj | 150 | °C | 1 | |||
| IEC61000-4-2 (ESD) air discharge | -25 | 25 | KV | IEC61000-4-2 air discharge | 1 | ||
| IEC61000-4-2 (ESD) contact discharge | -20 | 20 | KV | IEC61000-4-2 contact discharge | 1 | ||
| Reverse leakage current | IR1 | 0.5 | A | @ VRWM | 2 | ||
| Reverse leakage current | IR2 | 0.3 | A | @ VR = 3.5V | 2 | ||
| Breakdown voltage | VBR | 5.6 | V | @ IT = 1.0 mA; pulse test at 25°C (Note 2) | 2 | ||
| Clamping voltage | VC | 8 | V | @ IPP = 1 A (Note 3) | 2 | ||
| Clamping voltage at max IPP | VC | 12 | V | @ MAX IPP (Note 3) | 2 | ||
| Peak pulse current | IPP | 5.5 | A | (Note 3) | 2 | ||
| Peak pulse power | PPK | 66 | W | (Note 3) | 2 |
CAD (KiCad official)
- Symbol:
HPESD5V0V1BL - Footprint:
Diode_SMD:D_SOD-882 - 3D model: DFN1006-2L (KiCad packages3D, STEP)
- 3D model files:
hpesd5v0v1bl-etched.step/hpesd5v0v1bl-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hpesd5v0v1bl.step/hpesd5v0v1bl.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (4 pp, sha256
83ba15f92cb2b402, retrieved 2026-10-15, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins, primarytwo-terminal convention(convention), consensusoff(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).