# HNX138BKWX

**HXY MOSFET** · MOSFETs · SOT-323-3

HNX138BKWX from HXY MOSFET, in a SOT-323-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the N-channel enhancement MOSFET, with gate-source voltage limited to ±20 V. |
| 2 | D | passive | Drain terminal, rated for a drain-source voltage of 60 V and a continuous drain current of 0.115 A. |
| 3 | S | passive | Source terminal, the reference for the gate-source voltage rating of ±20 V. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOT-323-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | 60 | V |  | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Drain Current-Continuous | ID |  |  | 0.115 | A |  | 1 |
| Maximum Power Dissipation | PD |  |  | 0.2 | W |  | 1 |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance, Junction-to-Ambient (Note 2) | RθJA |  |  | 625 | ℃/W |  | 1 |
| Drain-Source Breakdown Voltage | V(BR)DSS | 60 |  |  | V | VGS=0 V, ID=250 µA | 2 |
| Gate-Threshold Voltage | V(GS)th | 1 | 1.6 | 2.5 | V | VDS=VGS, ID=250 µA | 2 |
| Gate-body Leakage | IGSS | -80 |  | 80 | nA | VDS=0 V, VGS=±20 V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 80 | nA | VDS=60 V, VGS=0 V | 2 |
| On-state Drain Current | ID(on) | 500 |  |  | mA | VGS=10 V, VDS=7 V | 2 |
| Drain-Source On-Resistance | RDS(on) |  | 1.3 | 3 | Ω | VGS=10 V, ID=115mA | 2 |
| Drain-Source On-Resistance | RDS(on) |  | 2 | 5 | Ω | VGS=4.5V, ID=50mA | 2 |
| Forward Transconductance | gfs | 80 |  | 500 | ms | VDS=10 V, ID=200mA | 2 |
| Drain-source on-voltage | VDS(on) |  | 0.5 | 3.75 | V | VGS=10V, ID=500mA | 2 |
| Drain-source on-voltage | VDS(on) |  | 0.05 | 0.375 | V | VGS=5V, ID=50mA | 2 |
| Diode Forward Voltage | VSD |  | 0.55 | 1.2 | V | IS=115mA, VGS=0 V | 2 |

## CAD (KiCad official)

- Symbol: `HNX138BKWX`
- Footprint: `Package_TO_SOT_SMD:SOT-323_SC-70`
- 3D model: SOT-323-3 (KiCad packages3D, STEP)
- 3D model files: `hnx138bkwx-etched.step` / `hnx138bkwx-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `hnx138bkwx.step` / `hnx138bkwx.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HXY MOSFET datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8604438415173693440) (5 pp, sha256 `2278073d4ea39cbc`, retrieved 2026-10-16, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/hnx138bkwx-datasheet.pdf)