component
HNX138BKWX
Public Made by Adomby adom
HXY MOSFET MOSFETs, SOT-323-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownHNX138BKWX
HXY MOSFET · MOSFETs · SOT-323-3
HNX138BKWX from HXY MOSFET, in a SOT-323-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the N-channel enhancement MOSFET, with gate-source voltage limited to ±20 V. |
| 2 | D | passive | Drain terminal, rated for a drain-source voltage of 60 V and a continuous drain current of 0.115 A. |
| 3 | S | passive | Source terminal, the reference for the gate-source voltage rating of ±20 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOT-323-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 60 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Drain Current-Continuous | ID | 0.115 | A | 1 | |||
| Maximum Power Dissipation | PD | 0.2 | W | 1 | |||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance, Junction-to-Ambient (Note 2) | RθJA | 625 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage | V(BR)DSS | 60 | V | VGS=0 V, ID=250 µA | 2 | ||
| Gate-Threshold Voltage | V(GS)th | 1 | 1.6 | 2.5 | V | VDS=VGS, ID=250 µA | 2 |
| Gate-body Leakage | IGSS | -80 | 80 | nA | VDS=0 V, VGS=±20 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 80 | nA | VDS=60 V, VGS=0 V | 2 | ||
| On-state Drain Current | ID(on) | 500 | mA | VGS=10 V, VDS=7 V | 2 | ||
| Drain-Source On-Resistance | RDS(on) | 1.3 | 3 | Ω | VGS=10 V, ID=115mA | 2 | |
| Drain-Source On-Resistance | RDS(on) | 2 | 5 | Ω | VGS=4.5V, ID=50mA | 2 | |
| Forward Transconductance | gfs | 80 | 500 | ms | VDS=10 V, ID=200mA | 2 | |
| Drain-source on-voltage | VDS(on) | 0.5 | 3.75 | V | VGS=10V, ID=500mA | 2 | |
| Drain-source on-voltage | VDS(on) | 0.05 | 0.375 | V | VGS=5V, ID=50mA | 2 | |
| Diode Forward Voltage | VSD | 0.55 | 1.2 | V | IS=115mA, VGS=0 V | 2 |
CAD (KiCad official)
- Symbol:
HNX138BKWX - Footprint:
Package_TO_SOT_SMD:SOT-323_SC-70 - 3D model: SOT-323-3 (KiCad packages3D, STEP)
- 3D model files:
hnx138bkwx-etched.step/hnx138bkwx-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hnx138bkwx.step/hnx138bkwx.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (5 pp, sha256
2278073d4ea39cbc, retrieved 2026-10-16, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).