component
HNVH4L075N065SC1
Public Made by Adomby adom
HXY MOSFET Silicon Carbide Field Effect Transistor (MOSFET), TO-247-4L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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{
"schema_version": 1,
"type": "component",
"slug": "hnvh4l075n065sc1",
"title": "HNVH4L075N065SC1",
"brief": "HXY MOSFET Silicon Carbide Field Effect Transistor (MOSFET), TO-247-4L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
"version": "0.1.0",
"license": "CC-BY-SA-4.0",
"tags": [
"component",
"silicon carbide (sic) devices",
"hnvh4l075n065sc1",
"factory-2.0.0",
"extractor-text"
],
"component": {
"mpn": "HNVH4L075N065SC1",
"manufacturer": "HXY MOSFET",
"package": "TO-247-4L",
"pin_count": 4,
"category": "Silicon Carbide (SiC) Devices",
"subcategory": "Silicon Carbide Field Effect Transistor (MOSFET)",
"datasheet": "https://datasheet.lcsc.com/datasheet/pdf/1e2fc51e05edbdf5e165a0e07a950235.pdf",
"parts": {
"symbol": "hnvh4l075n065sc1.kicad_sym",
"footprint": "hnvh4l075n065sc1.kicad_mod",
"model_3d": "hnvh4l075n065sc1-hero.glb",
"model_3d_plain": "hnvh4l075n065sc1-etched.glb",
"model_3d_step": "hnvh4l075n065sc1-etched.step",
"model_3d_step_plain": "hnvh4l075n065sc1.step",
"lbr": "hnvh4l075n065sc1.lbr"
},
"distributor_links": {
"lcsc": "C42389102"
},
"distributor_check": {
"checked_at": "2026-11-04T12:58:23Z",
"source": "Component Ocean /api/assign-pns",
"digikey": {
"pn": null,
"status": "no match"
},
"mouser": {
"pn": null,
"status": "no match"
}
},
"pins": [
{
"number": "1",
"name": "Drain",
"type": "passive",
"description": "Drain terminal, also connected to the metal tab; the device is rated for VDSS = 650 V at TC = 25 ˚C and ID = 37 A continuous at VGS = 15 V, TC = 25 ˚C."
},
{
"number": "2",
"name": "Power Source",
"type": "passive",
"description": "Power source terminal carrying the main drain current return path; the datasheet gives no separate limit for this pin beyond the device ratings."
},
{
"number": "3",
"name": "Driver Source",
"type": "passive",
"description": "Separate source terminal for the gate driver return, provided so the gate drive is not referenced through the power source pin (the datasheet lists this as an optimized-package feature)."
},
{
"number": "4",
"name": "Gate",
"type": "input",
"description": "Gate input with recommended turn-on voltage of 15 V and turn-off voltage of -4 V, and a transient VGS limit of -8/+19 V under events shorter than 100 ns."
}
],
"provenance": {
"extractor": "extract_pins 0.3",
"factory_chain": {
"factory": "2.0.0",
"extractor": "extract_pins 0.3",
"primary_model": "claude-haiku-5-5",
"primary_mode": "text",
"consensus_model": "claude-sonnet-5-5",
"consensus": "agreed",
"guards": "pin_guards 0.1: passed",
"guard_notes": [
"extractor flagged: The part is listed as TO-247H-4L in the datasheet; the package hint said TO-247-4L. The pinout here ; Pin types are assigned by KiCad ERC conventions (drain and source as passive, gate as input) because; The datasheet gives pin names and a pin-number diagram on page 1 only, with no dedicated pinout tabl"
],
"pages_sent": 12,
"cost_usd": 0.0493,
"at": "2026-11-04T12:58:15"
},
"datasheet": {
"url": "https://datasheet.lcsc.com/datasheet/pdf/1e2fc51e05edbdf5e165a0e07a950235.pdf",
"pages": 12,
"sha256": "cbaa6e93b1948552",
"source_tier": "lcsc"
},
"cad": "KiCad official (CC-BY-SA 4.0)",
"pins": {
"total": 4,
"described": 4,
"cites_pages": true,
"refuses_to_fabricate": true
}
},
"viewers": {
"symbol": "viewers/symbol.html",
"footprint": "viewers/footprint.html"
},
"models_3d": [
{
"file": "hnvh4l075n065sc1.step",
"role": "plain",
"up": "Z",
"units": "mm",
"origin": "footprint origin = pad-pattern centre",
"seat": "body on z = 0, through-hole leads below",
"extents_mm": [
15.9,
5.03,
41.1
],
"zmin_mm": -15.83,
"centre_offset_mm": 0.414,
"footprint_binding": "identity",
"sha256": "976ae560ee073c7450ef39d3d2fc3006e5eed9c51132093905f3e98066a0fc8d",
"checked": "2026-11-04",
"checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
},
{
"file": "hnvh4l075n065sc1-etched.step",
"role": "eda",
"up": "Z",
"units": "mm",
"origin": "footprint origin = pad-pattern centre",
"seat": "body on z = 0, through-hole leads below",
"extents_mm": [
15.9,
5.03,
41.1
],
"zmin_mm": -15.83,
"centre_offset_mm": 0.414,
"footprint_binding": "identity",
"sha256": "e47dbeddeacab3e44c1bd08c4d9699bfe8446aefa1281757838e5303cad9227a",
"checked": "2026-11-04",
"checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
}
]
},
"metadata": {
"specs": {
"Manufacturer": "HXY MOSFET",
"Package": "TO-247-4L",
"Category": "Silicon Carbide (SiC) Devices",
"Pins": "4"
},
"characteristics": {
"version": 1,
"source": "datasheet",
"datasheet_sha256": "cbaa6e93b1948552b19e766c707a2034067216aac65108472305353b93810701",
"rows": [
{
"name": "Drain - Source Voltage",
"symbol": "VDSS",
"kind": "absolute_maximum",
"unit": "V",
"min": null,
"typ": null,
"max": 650,
"conditions": "TC = 25 ˚C",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Gate - Source voltage (transient)",
"symbol": "VGS",
"kind": "absolute_maximum",
"unit": "V",
"min": -8,
"typ": null,
"max": 19,
"conditions": "Under transient events < 100 ns",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Continuous Drain Current",
"symbol": "ID",
"kind": "absolute_maximum",
"unit": "A",
"min": null,
"typ": null,
"max": 37,
"conditions": "VGS = 15 V, TC = 25˚C",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Continuous Drain Current",
"symbol": "ID",
"kind": "absolute_maximum",
"unit": "A",
"min": null,
"typ": null,
"max": 27,
"conditions": "VGS = 15 V, TC = 100˚C",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Pulsed Drain Current",
"symbol": "ID(pulse)",
"kind": "absolute_maximum",
"unit": "A",
"min": null,
"typ": null,
"max": 99,
"conditions": "Pulse width tP limited by Tjmax",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Power Dissipation",
"symbol": "PD",
"kind": "absolute_maximum",
"unit": "W",
"min": null,
"typ": null,
"max": 150,
"conditions": "TC=25˚C, TJ = 175 ˚C",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Operating Junction and Storage Temperature",
"symbol": "TJ, Tstg",
"kind": "absolute_maximum",
"unit": "˚C",
"min": -40,
"typ": null,
"max": 175,
"conditions": "",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Solder Temperature",
"symbol": "TL",
"kind": "absolute_maximum",
"unit": "˚C",
"min": null,
"typ": null,
"max": 260,
"conditions": "1.6mm (0.063”) from case for 10s",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Gate-Source Threshold Voltage",
"symbol": "VGS(th)",
"kind": "electrical",
"unit": "V",
"min": 1.8,
"typ": 2.3,
"max": 3.6,
"conditions": "VDS = VGS, ID = 5 mA",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Zero Gate Voltage Drain Current",
"symbol": "IDSS",
"kind": "electrical",
"unit": "μA",
"min": null,
"typ": 1,
"max": 50,
"conditions": "VDS = 650 V, VGS = 0 V",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Gate-Source Leakage Current",
"symbol": "IGSS",
"kind": "electrical",
"unit": "nA",
"min": null,
"typ": 10,
"max": 250,
"conditions": "VGS = 15 V, VDS = 0 V",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Drain-Source On-State Resistance",
"symbol": "RDS(on)",
"kind": "electrical",
"unit": "mΩ",
"min": 42,
"typ": 60,
"max": 79,
"conditions": "VGS = 15 V, ID = 13.2 A",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Thermal Resistance from Junction to Case",
"symbol": "RθJC",
"kind": "thermal",
"unit": "°C/W",
"min": null,
"typ": 0.99,
"max": null,
"conditions": "Fig. 21",
"source_page": 3,
"source": "datasheet"
},
{
"name": "Thermal Resistance From Junction to Ambient",
"symbol": "RθJA",
"kind": "thermal",
"unit": "°C/W",
"min": null,
"typ": 40,
"max": null,
"conditions": "",
"source_page": 3,
"source": "datasheet"
}
]
}
},
"variants": [],
"sections": [
"hero",
"viewers",
"readme",
"breadcrumbs",
"info"
],
"discovery_triggers": [
"hnvh4l075n065sc1"
],
"discovery_pitch": "HNVH4L075N065SC1 (HXY MOSFET) component page: datasheet pinout, KiCad symbol, footprint and 3D.",
"author": {
"name": "Ray",
"email": "[email protected]"
},
"dependencies": {},
"hero": {
"type": "image",
"path": "docs/hero.png"
},
"files": [
"page.json",
"README.md",
"hnvh4l075n065sc1.kicad_sym",
"hnvh4l075n065sc1.kicad_mod",
"hnvh4l075n065sc1.glb",
"hnvh4l075n065sc1.step",
"hnvh4l075n065sc1.lbr",
"docs/hero.png",
"docs/hnvh4l075n065sc1-datasheet.pdf",
"viewers/symbol.html",
"viewers/footprint.html",
"hnvh4l075n065sc1-hero.glb",
"hnvh4l075n065sc1-hero.overlay.json",
"hnvh4l075n065sc1-etched.glb"
],
"visibility": {
"public": true
}
}