component

HNVH4L075N065SC1

Public Made by Adom

by adom

HXY MOSFET Silicon Carbide Field Effect Transistor (MOSFET), TO-247-4L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componentsilicon carbide (sic) deviceshnvh4l075n065sc1factory-2.0.0extractor-text

Changed since verified HNVH4L075N065SC1

by Ray · last 4 Nov 2026 · 1 record · files changed since
SymbolFootprint3D modelPins

Verification log 1 record

4 Nov 2026RayPublished by the parts factory: tier lcsc, 4 pinschanged since
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: HNVH4L075N065SC1 · TO-247-4L · 4 pins
  • ✓copper: 4 copper pads, none touching another net
  • ✓datasheet: all 4 pin names found in the 12-page datasheet
  • •distributor (warn): no ['digikey', 'mouser'] number
  • ✓family: TO-247-4_Vertical
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-3_1e20l6/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • •package_fit (skip): no component.package_dims on the page: the model is unchecked against the datasheet drawing
  • ✓pads: 4 pins = 4 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 4 pins agree
  • ✓visibility: public, source open
Evidencedatasheet
Verified files! hnvh4l075n065sc1.kicad_sym✓ hnvh4l075n065sc1.kicad_mod✓ hnvh4l075n065sc1.step
Spot something wrong? Report it as an issue Propose a fix Records are signed by members of adom.
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity

3D Model

Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

Symbol & Footprint

Schematic Symbol

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

PCB Footprint

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

Datasheet

Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Download PDF
Contents

README

markdown

HNVH4L075N065SC1

HXY MOSFET · Silicon Carbide Field Effect Transistor (MOSFET) · TO-247-4L

HNVH4L075N065SC1 from HXY MOSFET, in a TO-247-4L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Drain passive Drain terminal, also connected to the metal tab; the device is rated for VDSS = 650 V at TC = 25 ˚C and ID = 37 A continuous at VGS = 15 V, TC = 25 ˚C.
2 Power Source passive Power source terminal carrying the main drain current return path; the datasheet gives no separate limit for this pin beyond the device ratings.
3 Driver Source passive Separate source terminal for the gate driver return, provided so the gate drive is not referenced through the power source pin (the datasheet lists this as an optimized-package feature).
4 Gate input Gate input with recommended turn-on voltage of 15 V and turn-off voltage of -4 V, and a transient VGS limit of -8/+19 V under events shorter than 100 ns.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package TO-247-4L
Category Silicon Carbide (SiC) Devices
Pins 4

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain - Source Voltage VDSS 650 V TC = 25 ˚C 1
Gate - Source voltage (transient) VGS -8 19 V Under transient events < 100 ns 1
Continuous Drain Current ID 37 A VGS = 15 V, TC = 25˚C 1
Continuous Drain Current ID 27 A VGS = 15 V, TC = 100˚C 1
Pulsed Drain Current ID(pulse) 99 A Pulse width tP limited by Tjmax 1
Power Dissipation PD 150 W TC=25˚C, TJ = 175 ˚C 1
Operating Junction and Storage Temperature TJ, Tstg -40 175 ˚C 1
Solder Temperature TL 260 ˚C 1.6mm (0.063”) from case for 10s 1
Gate-Source Threshold Voltage VGS(th) 1.8 2.3 3.6 V VDS = VGS, ID = 5 mA 2
Zero Gate Voltage Drain Current IDSS 1 50 μA VDS = 650 V, VGS = 0 V 2
Gate-Source Leakage Current IGSS 10 250 nA VGS = 15 V, VDS = 0 V 2
Drain-Source On-State Resistance RDS(on) 42 60 79 mΩ VGS = 15 V, ID = 13.2 A 2
Thermal Resistance from Junction to Case RθJC 0.99 °C/W Fig. 21 3
Thermal Resistance From Junction to Ambient RθJA 40 °C/W 3

CAD (KiCad official)

  • Symbol: HNVH4L075N065SC1
  • Footprint: Package_TO_SOT_THT:TO-247-4_Vertical
  • 3D model: TO-247-4L (KiCad packages3D, STEP)
  • 3D model files: hnvh4l075n065sc1-etched.step / hnvh4l075n065sc1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hnvh4l075n065sc1.step / hnvh4l075n065sc1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (12 pp, sha256 cbaa6e93b1948552, retrieved 2026-11-04, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF