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HMMDT39467F

Public Made by Adom

by adom

HXY MOSFET Bipolar (BJT), SOT-363. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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HMMDT39467F

HXY MOSFET · Bipolar (BJT) · SOT-363

HMMDT39467F from HXY MOSFET, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 E1 passive Emitter of the NPN 3904-type transistor (Q1); VEBO max 5 V, IC max 200 mA.
2 B1 passive Base of the NPN 3904-type transistor (Q1); VEBO max 5 V.
3 C2 passive Collector of the PNP 3906-type transistor (Q2); VCEO -40 V, IC max -200 mA.
4 E2 passive Emitter of the PNP 3906-type transistor (Q2); VEBO -5 V max.
5 B2 passive Base of the PNP 3906-type transistor (Q2); VEBO -5 V max.
6 C1 passive Collector of the NPN 3904-type transistor (Q1); VCEO 40 V, VCBO 60 V, IC max 200 mA.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOT-363
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
NPN Collector-Base Voltage VCBO 60 V Ta=25°C 1
NPN Collector-Emitter Voltage VCEO 40 V Ta=25°C 1
NPN Emitter-Base Voltage VEBO 5 V Ta=25°C 1
NPN Collector Current IC 200 mA Ta=25°C 1
NPN Collector Power Dissipation PC 200 mW Ta=25°C 1
NPN Thermal Resistance Junction to Ambient RΘJA 625 ℃/W 1
NPN Operation Junction and Storage Temperature Range TJ, Tstg -55 150 ℃ 1
NPN Collector-base breakdown voltage V(BR)CBO 60 V IC=10µA, IE=0 1
NPN Collector-emitter breakdown voltage V(BR)CEO 40 V IC=1mA, IB=0 1
NPN Emitter-base breakdown voltage V(BR)EBO 5 V IE=10µA, IC=0 1
NPN Collector cut-off current ICEO 50 nA VCE=30V, IB=0 1
NPN Emitter cut-off current IEBO 50 nA VEB=5V, IC=0 1
NPN DC current gain(1) hFE(1) 40 VCE=1V, IC=100μA 1
NPN DC current gain(2) hFE(2) 70 VCE=1V, IC=1mA 1
NPN DC current gain(3) hFE(3) 100 300 VCE=1V, IC=10mA 1
NPN DC current gain(4) hFE(4) 60 VCE=1V, IC=50mA 1
NPN DC current gain(5) hFE(5) 30 VCE=1V, IC=100mA 1
NPN Collector-emitter saturation voltage VCE(sat) 0.2 V IC=10mA, IB=1mA 1
NPN Collector-emitter saturation voltage VCE(sat) 0.3 V IC=50mA, IB=5mA 1
NPN Base-emitter saturation voltage VBE(sat) 0.65 0.85 V IC=10mA, IB=1mA 1
NPN Base-emitter saturation voltage VBE(sat) 0.95 V IC=50mA, IB=5mA 1
NPN Transition frequency fT 300 MHz VCE=20V, IC=10mA, f=100MHz 1
NPN Collector output capacitance Cob 4 pF VCB=5V, IE=0, f=1MHz 1
NPN Noise figure NF 5 dB VCE=5V,Ic=0.1mA,f=1kHz,Rg=1KΩ 1
NPN Delay time td 35 ns VCC=3V, VBE(off)=0.5V, IC=10mA, IB1=IB2=1mA 1
NPN Rise time tr 35 ns VCC=3V, VBE(off)=0.5V, IC=10mA, IB1=IB2=1mA 1
NPN Storage time ts 225 ns VCC=3V, IC=10mA, IB1=IB2=1mA 1
NPN Fall time tf 75 ns VCC=3V, IC=10mA, IB1=IB2=1mA 1
PNP Collector-Base Voltage VCBO -40 V Ta=25°C 2
PNP Collector-Emitter Voltage VCEO -40 V Ta=25°C 2
PNP Emitter-Base Voltage VEBO -5 V Ta=25°C 2
PNP Collector Current IC -200 mA Ta=25°C 2
PNP Collector Power Dissipation PC 200 mW Ta=25°C 2
PNP Thermal Resistance Junction to Ambient RΘJA 625 ℃/W 2
PNP Operation Junction and Storage Temperature Range TJ, Tstg -55 150 ℃ 2
PNP Collector-base breakdown voltage V(BR)CBO -40 V IC=-10µA, IE=0 2
PNP Collector-emitter breakdown voltage V(BR)CEO -40 V IC=-1mA, IB=0 2
PNP Emitter-base breakdown voltage V(BR)EBO -5 V IE=-10µA, IC=0 2
PNP Collector cut-off current ICEX -50 nA VCE=-30V, VEB(off)=-3V 2
PNP Base cut-off current IEBO -50 nA VEB=-5V,IE=0 2
PNP DC current gain(1) hFE(1) 60 VCE=-1V, IC=-100μA 2
PNP DC current gain(2) hFE(2) 80 VCE=-1V, IC=-1mA 2
PNP DC current gain(3) hFE(3) 100 300 VCE=-1V, IC=-10mA 2
PNP DC current gain(4) hFE(4) 60 VCE=-1V, IC=-50mA 2
PNP DC current gain(5) hFE(5) 30 VCE=-1V, IC=-100mA 2
PNP Collector-emitter saturation voltage VCE(sat) -0.25 V IC=-10mA, IB=-1mA 2
PNP Collector-emitter saturation voltage VCE(sat) -0.4 V IC=-50mA, IB=-5mA 2
PNP Base-emitter saturation voltage VBE(sat) -0.65 -0.85 V IC=-10mA, IB=-1mA 2
PNP Base-emitter saturation voltage VBE(sat) -0.95 V IC=-50mA, IB=-5mA 2
PNP Transition frequency fT 250 MHz VCE=-20V, IC=-10mA, f=100MHz 2
PNP Collector output capacitance Cob 4.5 pF VCB=-5V, IE=0, f=1MHz 2
PNP Noise figure NF 4 dB VCE=-5V,Ic=-0.1mA,f=1kHz,Rg=1KΩ 2
PNP Delay time td 35 ns VCC=-3V, VBE(off)=-0.5V, IC=-10mA, IB1=IB2=-1mA 2
PNP Rise time tr 35 ns VCC=-3V, VBE(off)=-0.5V, IC=-10mA, IB1=IB2=-1mA 2
PNP Storage time ts 225 ns VCC=-3V, IC=-10mA, IB1=IB2=-1mA 2
PNP Fall time tf 75 ns VCC=-3V, IC=-10mA, IB1=IB2=-1mA 2

CAD (KiCad official)

  • Symbol: HMMDT39467F
  • Footprint: Package_TO_SOT_SMD:SOT-363_SC-70-6
  • 3D model: SOT-363 (KiCad packages3D, STEP)
  • 3D model files: hmmdt39467f-etched.step / hmmdt39467f-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hmmdt39467f.step / hmmdt39467f.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (4 pp, sha256 a6d678dbd0665f04, retrieved 2026-10-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF