component
HMMDT39467F
Public Made by Adomby adom
HXY MOSFET Bipolar (BJT), SOT-363. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownHMMDT39467F
HXY MOSFET · Bipolar (BJT) · SOT-363
HMMDT39467F from HXY MOSFET, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | E1 | passive | Emitter of the NPN 3904-type transistor (Q1); VEBO max 5 V, IC max 200 mA. |
| 2 | B1 | passive | Base of the NPN 3904-type transistor (Q1); VEBO max 5 V. |
| 3 | C2 | passive | Collector of the PNP 3906-type transistor (Q2); VCEO -40 V, IC max -200 mA. |
| 4 | E2 | passive | Emitter of the PNP 3906-type transistor (Q2); VEBO -5 V max. |
| 5 | B2 | passive | Base of the PNP 3906-type transistor (Q2); VEBO -5 V max. |
| 6 | C1 | passive | Collector of the NPN 3904-type transistor (Q1); VCEO 40 V, VCBO 60 V, IC max 200 mA. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOT-363 |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| NPN Collector-Base Voltage | VCBO | 60 | V | Ta=25°C | 1 | ||
| NPN Collector-Emitter Voltage | VCEO | 40 | V | Ta=25°C | 1 | ||
| NPN Emitter-Base Voltage | VEBO | 5 | V | Ta=25°C | 1 | ||
| NPN Collector Current | IC | 200 | mA | Ta=25°C | 1 | ||
| NPN Collector Power Dissipation | PC | 200 | mW | Ta=25°C | 1 | ||
| NPN Thermal Resistance Junction to Ambient | RΘJA | 625 | ℃/W | 1 | |||
| NPN Operation Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | ℃ | 1 | ||
| NPN Collector-base breakdown voltage | V(BR)CBO | 60 | V | IC=10µA, IE=0 | 1 | ||
| NPN Collector-emitter breakdown voltage | V(BR)CEO | 40 | V | IC=1mA, IB=0 | 1 | ||
| NPN Emitter-base breakdown voltage | V(BR)EBO | 5 | V | IE=10µA, IC=0 | 1 | ||
| NPN Collector cut-off current | ICEO | 50 | nA | VCE=30V, IB=0 | 1 | ||
| NPN Emitter cut-off current | IEBO | 50 | nA | VEB=5V, IC=0 | 1 | ||
| NPN DC current gain(1) | hFE(1) | 40 | VCE=1V, IC=100μA | 1 | |||
| NPN DC current gain(2) | hFE(2) | 70 | VCE=1V, IC=1mA | 1 | |||
| NPN DC current gain(3) | hFE(3) | 100 | 300 | VCE=1V, IC=10mA | 1 | ||
| NPN DC current gain(4) | hFE(4) | 60 | VCE=1V, IC=50mA | 1 | |||
| NPN DC current gain(5) | hFE(5) | 30 | VCE=1V, IC=100mA | 1 | |||
| NPN Collector-emitter saturation voltage | VCE(sat) | 0.2 | V | IC=10mA, IB=1mA | 1 | ||
| NPN Collector-emitter saturation voltage | VCE(sat) | 0.3 | V | IC=50mA, IB=5mA | 1 | ||
| NPN Base-emitter saturation voltage | VBE(sat) | 0.65 | 0.85 | V | IC=10mA, IB=1mA | 1 | |
| NPN Base-emitter saturation voltage | VBE(sat) | 0.95 | V | IC=50mA, IB=5mA | 1 | ||
| NPN Transition frequency | fT | 300 | MHz | VCE=20V, IC=10mA, f=100MHz | 1 | ||
| NPN Collector output capacitance | Cob | 4 | pF | VCB=5V, IE=0, f=1MHz | 1 | ||
| NPN Noise figure | NF | 5 | dB | VCE=5V,Ic=0.1mA,f=1kHz,Rg=1KΩ | 1 | ||
| NPN Delay time | td | 35 | ns | VCC=3V, VBE(off)=0.5V, IC=10mA, IB1=IB2=1mA | 1 | ||
| NPN Rise time | tr | 35 | ns | VCC=3V, VBE(off)=0.5V, IC=10mA, IB1=IB2=1mA | 1 | ||
| NPN Storage time | ts | 225 | ns | VCC=3V, IC=10mA, IB1=IB2=1mA | 1 | ||
| NPN Fall time | tf | 75 | ns | VCC=3V, IC=10mA, IB1=IB2=1mA | 1 | ||
| PNP Collector-Base Voltage | VCBO | -40 | V | Ta=25°C | 2 | ||
| PNP Collector-Emitter Voltage | VCEO | -40 | V | Ta=25°C | 2 | ||
| PNP Emitter-Base Voltage | VEBO | -5 | V | Ta=25°C | 2 | ||
| PNP Collector Current | IC | -200 | mA | Ta=25°C | 2 | ||
| PNP Collector Power Dissipation | PC | 200 | mW | Ta=25°C | 2 | ||
| PNP Thermal Resistance Junction to Ambient | RΘJA | 625 | ℃/W | 2 | |||
| PNP Operation Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | ℃ | 2 | ||
| PNP Collector-base breakdown voltage | V(BR)CBO | -40 | V | IC=-10µA, IE=0 | 2 | ||
| PNP Collector-emitter breakdown voltage | V(BR)CEO | -40 | V | IC=-1mA, IB=0 | 2 | ||
| PNP Emitter-base breakdown voltage | V(BR)EBO | -5 | V | IE=-10µA, IC=0 | 2 | ||
| PNP Collector cut-off current | ICEX | -50 | nA | VCE=-30V, VEB(off)=-3V | 2 | ||
| PNP Base cut-off current | IEBO | -50 | nA | VEB=-5V,IE=0 | 2 | ||
| PNP DC current gain(1) | hFE(1) | 60 | VCE=-1V, IC=-100μA | 2 | |||
| PNP DC current gain(2) | hFE(2) | 80 | VCE=-1V, IC=-1mA | 2 | |||
| PNP DC current gain(3) | hFE(3) | 100 | 300 | VCE=-1V, IC=-10mA | 2 | ||
| PNP DC current gain(4) | hFE(4) | 60 | VCE=-1V, IC=-50mA | 2 | |||
| PNP DC current gain(5) | hFE(5) | 30 | VCE=-1V, IC=-100mA | 2 | |||
| PNP Collector-emitter saturation voltage | VCE(sat) | -0.25 | V | IC=-10mA, IB=-1mA | 2 | ||
| PNP Collector-emitter saturation voltage | VCE(sat) | -0.4 | V | IC=-50mA, IB=-5mA | 2 | ||
| PNP Base-emitter saturation voltage | VBE(sat) | -0.65 | -0.85 | V | IC=-10mA, IB=-1mA | 2 | |
| PNP Base-emitter saturation voltage | VBE(sat) | -0.95 | V | IC=-50mA, IB=-5mA | 2 | ||
| PNP Transition frequency | fT | 250 | MHz | VCE=-20V, IC=-10mA, f=100MHz | 2 | ||
| PNP Collector output capacitance | Cob | 4.5 | pF | VCB=-5V, IE=0, f=1MHz | 2 | ||
| PNP Noise figure | NF | 4 | dB | VCE=-5V,Ic=-0.1mA,f=1kHz,Rg=1KΩ | 2 | ||
| PNP Delay time | td | 35 | ns | VCC=-3V, VBE(off)=-0.5V, IC=-10mA, IB1=IB2=-1mA | 2 | ||
| PNP Rise time | tr | 35 | ns | VCC=-3V, VBE(off)=-0.5V, IC=-10mA, IB1=IB2=-1mA | 2 | ||
| PNP Storage time | ts | 225 | ns | VCC=-3V, IC=-10mA, IB1=IB2=-1mA | 2 | ||
| PNP Fall time | tf | 75 | ns | VCC=-3V, IC=-10mA, IB1=IB2=-1mA | 2 |
CAD (KiCad official)
- Symbol:
HMMDT39467F - Footprint:
Package_TO_SOT_SMD:SOT-363_SC-70-6 - 3D model: SOT-363 (KiCad packages3D, STEP)
- 3D model files:
hmmdt39467f-etched.step/hmmdt39467f-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hmmdt39467f.step/hmmdt39467f.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (4 pp, sha256
a6d678dbd0665f04, retrieved 2026-10-23, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).