# HM70P04-VB

**VBsemi Elec** · MOSFETs · TO-220AB

HM70P04-VB from VBsemi Elec, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limit is ±20 V, with threshold VGS(th) of -2 V min to -4 V max at ID = -250 µA. |
| 2 | D | passive | Drain (also connected to the tab); drain-source voltage -40 V, continuous drain current -110 A (package limited), pulsed 240 A. |
| 3 | S | passive | Source; continuous source-drain diode current is 110 A at TC = 25 °C. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TO-220AB |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | VDS | -40 |  |  | V | VGS = 0 V, ID = - 250 µA | 2 |
| Gate-Source Threshold Voltage | VGS(th) | -2 | -3 | -4 | V | VDS = VGS, ID = - 250 µA | 2 |
| Gate-Source Leakage | IGSS |  |  | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | -1 | µA | VDS = - 40 V, VGS = 0 V | 2 |
| Zero Gate Voltage Drain Current (55 °C) | IDSS |  |  | -10 | µA | VDS = - 40 V, VGS = 0 V, TJ = 55 °C | 2 |
| On-State Drain Current | ID(on) | -120 |  |  | A | VDS ≥ 5 V, VGS = - 10 V | 2 |
| Total Gate Charge | Qg |  | 185 | 280 | nC | VDS = - 20 V, VGS = - 10 V, ID = - 110 A | 2 |
| Turn-On Delay Time | td(on) |  | 25 | 40 | ns | VDD = - 20 V, RL = 0.18 Ω, ID ≅ - 110 A, VGEN = - 10 V, Rg = 1 Ω | 2 |
| Rise Time | tr |  | 290 | 440 | ns | VDD = - 20 V, RL = 0.18 Ω, ID ≅ - 110 A, VGEN = - 10 V, Rg = 1 Ω | 2 |
| Turn-Off Delay Time | td(off) |  | 110 | 165 | ns | VDD = - 20 V, RL = 0.18 Ω, ID ≅ - 110 A, VGEN = - 10 V, Rg = 1 Ω | 2 |
| Fall Time | tf |  | 35 | 55 | ns | VDD = - 20 V, RL = 0.18 Ω, ID ≅ - 110 A, VGEN = - 10 V, Rg = 1 Ω | 2 |
| Continuous Source-Drain Diode Current | IS |  |  | -110 | A | TC = 25 °C | 2 |
| Pulse Diode Forward Current | ISM |  |  | -240 | A |  | 2 |
| Body Diode Voltage | VSD |  | -0.8 | -1.5 | V | IS = - 20 A | 2 |
| Body Diode Reverse Recovery Time | trr |  | 70 | 105 | ns | IF = - 20 A, di/dt = 100 A/µs, TJ = 25 °C | 2 |
| Body Diode Reverse Recovery Charge | Qrr |  | 130 | 200 | nC | IF = - 20 A, di/dt = 100 A/µs, TJ = 25 °C | 2 |
| Drain-Source Voltage | VDS |  |  | -40 | V | TA = 25 °C | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V | TA = 25 °C | 1 |
| Continuous Drain Current | ID |  |  | -110 | A | TJ = 175 °C, TC = 25 °C, package limited | 1 |
| Pulsed Drain Current | IDM |  |  | 240 | A | TA = 25 °C | 1 |
| Continuous Source-Drain Diode Current | IS |  |  | 110 | A | TC = 25 °C | 1 |
| Avalanche Current | IAS |  |  | 75 | A | L = 0.1 mH | 1 |
| Single-Pulse Avalanche Energy | EAS |  |  | 281 | mJ | L = 0.1 mH | 1 |
| Maximum Power Dissipation | PD |  |  | 375 | W | TC = 25 °C | 1 |
| Maximum Power Dissipation | PD |  |  | 262 | W | TC = 70 °C | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 |  | 175 | °C |  | 1 |
| Soldering Recommendations (Peak Temperature) |  |  |  | 260 | °C |  | 1 |
| Maximum Junction-to-Case (Drain) | RthJC |  | 0.33 | 0.4 | °C/W | Steady State | 1 |
| VDS Temperature Coefficient | ΔVDS/TJ |  | -40 |  | mV/°C | ID = - 250 µA | 2 |
| VGS(th) Temperature Coefficient | ΔVGS(th)/TJ |  | -5.5 |  | mV/°C | ID = - 250 µA | 2 |
| Drain-Source On-State Resistance | rDS(on) |  | 0.0041 |  | Ω | VGS = - 10 V, ID = - 20 A | 2 |
| Forward Transconductance | gfs |  | 75 |  | S | VDS = - 15 V, ID = - 20 A | 2 |
| Input Capacitance | Ciss |  | 11300 |  | pF | VDS = - 25 V, VGS = 0 V, f = 1 MHz | 2 |
| Output Capacitance | Coss |  | 1510 |  | pF | VDS = - 25 V, VGS = 0 V, f = 1 MHz | 2 |
| Reverse Transfer Capacitance | Crss |  | 1000 |  | pF | VDS = - 25 V, VGS = 0 V, f = 1 MHz | 2 |
| Gate-Source Charge | Qgs |  | 48 |  | nC | VDS = - 20 V, VGS = - 10 V, ID = - 110 A | 2 |
| Gate-Drain Charge | Qgd |  | 42 |  | nC | VDS = - 20 V, VGS = - 10 V, ID = - 110 A | 2 |
| Gate Resistance | Rg |  | 4 |  | Ω | f = 1 MHz | 2 |
| Reverse Recovery Fall Time | ta |  | 37 |  | ns | IF = - 20 A, di/dt = 100 A/µs, TJ = 25 °C | 2 |
| Reverse Recovery Rise Time | tb |  | 33 |  | ns | IF = - 20 A, di/dt = 100 A/µs, TJ = 25 °C | 2 |

## CAD (KiCad official)

- Symbol: `HM70P04-VB`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220AB (KiCad packages3D, STEP)
- 3D model files: `hm70p04-vb-etched.step` / `hm70p04-vb-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `hm70p04-vb.step` / `hm70p04-vb.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [VBsemi Elec datasheet](docs/hm70p04-vb-datasheet.pdf) (7 pp, sha256 `6ca99e9641ecab85`, retrieved 2026-10-26, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/hm70p04-vb-datasheet.pdf)