component
HM70P04-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownHM70P04-VB
VBsemi Elec · MOSFETs · TO-220AB
HM70P04-VB from VBsemi Elec, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limit is ±20 V, with threshold VGS(th) of -2 V min to -4 V max at ID = -250 µA. |
| 2 | D | passive | Drain (also connected to the tab); drain-source voltage -40 V, continuous drain current -110 A (package limited), pulsed 240 A. |
| 3 | S | passive | Source; continuous source-drain diode current is 110 A at TC = 25 °C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TO-220AB |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | VDS | -40 | V | VGS = 0 V, ID = - 250 µA | 2 | ||
| Gate-Source Threshold Voltage | VGS(th) | -2 | -3 | -4 | V | VDS = VGS, ID = - 250 µA | 2 |
| Gate-Source Leakage | IGSS | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | µA | VDS = - 40 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current (55 °C) | IDSS | -10 | µA | VDS = - 40 V, VGS = 0 V, TJ = 55 °C | 2 | ||
| On-State Drain Current | ID(on) | -120 | A | VDS ≥ 5 V, VGS = - 10 V | 2 | ||
| Total Gate Charge | Qg | 185 | 280 | nC | VDS = - 20 V, VGS = - 10 V, ID = - 110 A | 2 | |
| Turn-On Delay Time | td(on) | 25 | 40 | ns | VDD = - 20 V, RL = 0.18 Ω, ID ≅ - 110 A, VGEN = - 10 V, Rg = 1 Ω | 2 | |
| Rise Time | tr | 290 | 440 | ns | VDD = - 20 V, RL = 0.18 Ω, ID ≅ - 110 A, VGEN = - 10 V, Rg = 1 Ω | 2 | |
| Turn-Off Delay Time | td(off) | 110 | 165 | ns | VDD = - 20 V, RL = 0.18 Ω, ID ≅ - 110 A, VGEN = - 10 V, Rg = 1 Ω | 2 | |
| Fall Time | tf | 35 | 55 | ns | VDD = - 20 V, RL = 0.18 Ω, ID ≅ - 110 A, VGEN = - 10 V, Rg = 1 Ω | 2 | |
| Continuous Source-Drain Diode Current | IS | -110 | A | TC = 25 °C | 2 | ||
| Pulse Diode Forward Current | ISM | -240 | A | 2 | |||
| Body Diode Voltage | VSD | -0.8 | -1.5 | V | IS = - 20 A | 2 | |
| Body Diode Reverse Recovery Time | trr | 70 | 105 | ns | IF = - 20 A, di/dt = 100 A/µs, TJ = 25 °C | 2 | |
| Body Diode Reverse Recovery Charge | Qrr | 130 | 200 | nC | IF = - 20 A, di/dt = 100 A/µs, TJ = 25 °C | 2 | |
| Drain-Source Voltage | VDS | -40 | V | TA = 25 °C | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | TA = 25 °C | 1 | |
| Continuous Drain Current | ID | -110 | A | TJ = 175 °C, TC = 25 °C, package limited | 1 | ||
| Pulsed Drain Current | IDM | 240 | A | TA = 25 °C | 1 | ||
| Continuous Source-Drain Diode Current | IS | 110 | A | TC = 25 °C | 1 | ||
| Avalanche Current | IAS | 75 | A | L = 0.1 mH | 1 | ||
| Single-Pulse Avalanche Energy | EAS | 281 | mJ | L = 0.1 mH | 1 | ||
| Maximum Power Dissipation | PD | 375 | W | TC = 25 °C | 1 | ||
| Maximum Power Dissipation | PD | 262 | W | TC = 70 °C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 175 | °C | 1 | ||
| Soldering Recommendations (Peak Temperature) | 260 | °C | 1 | ||||
| Maximum Junction-to-Case (Drain) | RthJC | 0.33 | 0.4 | °C/W | Steady State | 1 | |
| VDS Temperature Coefficient | ΔVDS/TJ | -40 | mV/°C | ID = - 250 µA | 2 | ||
| VGS(th) Temperature Coefficient | ΔVGS(th)/TJ | -5.5 | mV/°C | ID = - 250 µA | 2 | ||
| Drain-Source On-State Resistance | rDS(on) | 0.0041 | Ω | VGS = - 10 V, ID = - 20 A | 2 | ||
| Forward Transconductance | gfs | 75 | S | VDS = - 15 V, ID = - 20 A | 2 | ||
| Input Capacitance | Ciss | 11300 | pF | VDS = - 25 V, VGS = 0 V, f = 1 MHz | 2 | ||
| Output Capacitance | Coss | 1510 | pF | VDS = - 25 V, VGS = 0 V, f = 1 MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 1000 | pF | VDS = - 25 V, VGS = 0 V, f = 1 MHz | 2 | ||
| Gate-Source Charge | Qgs | 48 | nC | VDS = - 20 V, VGS = - 10 V, ID = - 110 A | 2 | ||
| Gate-Drain Charge | Qgd | 42 | nC | VDS = - 20 V, VGS = - 10 V, ID = - 110 A | 2 | ||
| Gate Resistance | Rg | 4 | Ω | f = 1 MHz | 2 | ||
| Reverse Recovery Fall Time | ta | 37 | ns | IF = - 20 A, di/dt = 100 A/µs, TJ = 25 °C | 2 | ||
| Reverse Recovery Rise Time | tb | 33 | ns | IF = - 20 A, di/dt = 100 A/µs, TJ = 25 °C | 2 |
CAD (KiCad official)
- Symbol:
HM70P04-VB - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220AB (KiCad packages3D, STEP)
- 3D model files:
hm70p04-vb-etched.step/hm70p04-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hm70p04-vb.step/hm70p04-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (7 pp, sha256
6ca99e9641ecab85, retrieved 2026-10-26, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).