# HKTD7N65

**Guangdong Hottech** · MOSFETs · TO-252

HKTD7N65 from Guangdong Hottech, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; drives the MOSFET with VGS rated ±30 V max and threshold VGS(th) of 2.0 V min to 4.0 V max at ID=250µA. |
| 2 | D | passive | Drain, also connected to the metal tab; VDS rated 650 V max with continuous ID of 7 A and pulsed IDM of 28 A. |
| 3 | S | passive | Source; current return path for the 7 A continuous drain current and body diode (IS 7 A max). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Guangdong Hottech |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDS |  |  | 650 | V |  | 1 |
| Gate-source voltage | VGS | -30 |  | 30 | V |  | 1 |
| Continuous drain current | ID |  |  | 7 | A | VGS=10V | 1 |
| Pulsed drain current | IDM |  |  | 28 | A |  | 1 |
| Power dissipation | PD |  |  | 27.2 | W |  | 1 |
| Operating junction and storage temperature | TJ,TSTG | -55 |  | 150 | °C |  | 1 |
| Lead temperature for soldering purposes (1/8 in from case, 10 s) | TL |  |  | 260 | °C | 1/8 in from case for 10 s | 1 |
| Single pulsed avalanche energy | EAS |  |  | 550 | mJ | VDD=20V, L=0.5mH, RG=25Ω, Starting TJ=25°C | 1 |
| Thermal resistance, junction to ambient | RθJA |  |  | 100 | °C/W |  | 1 |
| Drain-source breakdown voltage | V(BR)DSS | 650 |  |  | V | VGS = 0V, ID = 250µA | 2 |
| Gate-source threshold voltage | VGS(th) | 2 |  | 4 | V | VDS = VGS, ID = 250µA | 2 |
| Drain-source on-resistance | RDS(on) |  | 1.08 | 1.3 | Ω | VGS = 10V, ID = 1A | 2 |
| Gate-source leakage | IGSS | -100 |  | 100 | nA | VGS = ±30V | 2 |
| Body diode voltage | VSD |  |  | 0.9 | V | TJ = 25ºC, ISD = 1.0A, VGS = 0V | 2 |
| Continuous body diode current | IS |  |  | 7 | A | TC = 25 ºC | 2 |
| Pulsed diode forward current | ISM |  |  | 28 | A |  | 2 |

## CAD (KiCad official)

- Symbol: `HKTD7N65`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `hktd7n65-etched.step` / `hktd7n65-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `hktd7n65.step` / `hktd7n65.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Guangdong Hottech datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603168999475855360) (5 pp, sha256 `aa8c1b4f632e33c2`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/hktd7n65-datasheet.pdf)