component
HKTD7N65
Public Made by Adomby adom
Guangdong Hottech MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownHKTD7N65
Guangdong Hottech · MOSFETs · TO-252
HKTD7N65 from Guangdong Hottech, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; drives the MOSFET with VGS rated ±30 V max and threshold VGS(th) of 2.0 V min to 4.0 V max at ID=250µA. |
| 2 | D | passive | Drain, also connected to the metal tab; VDS rated 650 V max with continuous ID of 7 A and pulsed IDM of 28 A. |
| 3 | S | passive | Source; current return path for the 7 A continuous drain current and body diode (IS 7 A max). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Guangdong Hottech |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDS | 650 | V | 1 | |||
| Gate-source voltage | VGS | -30 | 30 | V | 1 | ||
| Continuous drain current | ID | 7 | A | VGS=10V | 1 | ||
| Pulsed drain current | IDM | 28 | A | 1 | |||
| Power dissipation | PD | 27.2 | W | 1 | |||
| Operating junction and storage temperature | TJ,TSTG | -55 | 150 | °C | 1 | ||
| Lead temperature for soldering purposes (1/8 in from case, 10 s) | TL | 260 | °C | 1/8 in from case for 10 s | 1 | ||
| Single pulsed avalanche energy | EAS | 550 | mJ | VDD=20V, L=0.5mH, RG=25Ω, Starting TJ=25°C | 1 | ||
| Thermal resistance, junction to ambient | RθJA | 100 | °C/W | 1 | |||
| Drain-source breakdown voltage | V(BR)DSS | 650 | V | VGS = 0V, ID = 250µA | 2 | ||
| Gate-source threshold voltage | VGS(th) | 2 | 4 | V | VDS = VGS, ID = 250µA | 2 | |
| Drain-source on-resistance | RDS(on) | 1.08 | 1.3 | Ω | VGS = 10V, ID = 1A | 2 | |
| Gate-source leakage | IGSS | -100 | 100 | nA | VGS = ±30V | 2 | |
| Body diode voltage | VSD | 0.9 | V | TJ = 25ºC, ISD = 1.0A, VGS = 0V | 2 | ||
| Continuous body diode current | IS | 7 | A | TC = 25 ºC | 2 | ||
| Pulsed diode forward current | ISM | 28 | A | 2 |
CAD (KiCad official)
- Symbol:
HKTD7N65 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
hktd7n65-etched.step/hktd7n65-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hktd7n65.step/hktd7n65.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Guangdong Hottech datasheet (5 pp, sha256
aa8c1b4f632e33c2, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).