# HKTD5N50

**Guangdong Hottech** · MOSFETs · TO-252

HKTD5N50 from Guangdong Hottech, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; the gate-source voltage is rated at ±30 V maximum, with a threshold of 2.0 V min to 4.0 V max at ID=250µA. |
| 2 | D | passive | Drain, connected to the exposed tab; drain-source voltage is rated at 500 V and continuous drain current at 5 A. |
| 3 | S | passive | Source; body diode forward current is rated at 5 A continuous and 16 A pulsed. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Guangdong Hottech |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDS |  |  | 500 | V |  | 1 |
| Gate-source voltage | VGS | -30 |  | 30 | V |  | 1 |
| Continuous drain current | ID |  |  | 5 | A | VGS=10V | 1 |
| Pulsed drain current | IDM |  |  | 16 | A |  | 1 |
| Power dissipation | PD |  |  | 22 |  |  | 1 |
| Thermal resistance from junction to ambient | RθJA |  |  | 110 | C/W |  | 1 |
| Operating junction and storage temperature | TJ,TSTG | -55 |  | 150 | °C |  | 1 |
| Single Pulsed Avalanche Energy | EAS |  |  | 12 | mJ | VDD=20V, L=0.5mH, RG=25Ω, Starting TJ=25°C | 1 |
| Lead temperature for soldering purposes | TL |  |  | 260 | °C | 1/8 inch from case for 10s | 1 |
| Transient thermal impedance, junction to case | ZθJC(t) |  |  | 1.67 | °C/W | Duty = t/T, see Figure 9 | 4 |
| Drain-source breakdown voltage | V(BR)DSS | 500 |  |  | V | VGS=0V, ID=250μA | 2 |
| Zero gate voltage drain current | IDSS |  |  | 100 | nA | VDS=500V, VGS=0V | 2 |
| Gate-body leakage current | IGSS | -90 |  | 90 | nA | VDS=0V, VGS=±30V | 2 |
| Gate-threshold voltage | VGS(th) | 2 |  | 4 | V | VDS=VGS, ID=250μA | 2 |
| Drain-source on-resistance | RDS(ON) |  | 1.45 | 1.7 | Ω | VGS=10V, ID=1A | 2 |
| Drain-source on-resistance | RDS(ON) |  | 1.35 | 1.6 | Ω | VGS=10V, ID=2.5A | 2 |
| Forward transconductance | gFS | 5 |  |  | S | VDS=40V, ID=2A | 2 |
| Diode forward voltage | VSD |  |  | 1.5 | V | IS=5A, VGS=0V | 2 |
| Max. forward current | IS |  |  | 5 | A |  | 2 |
| Pulsed drain-source diode forward current | ISM |  |  | 16 | A |  | 2 |

## CAD (KiCad official)

- Symbol: `HKTD5N50`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `hktd5n50-etched.step` / `hktd5n50-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `hktd5n50.step` / `hktd5n50.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Guangdong Hottech datasheet](docs/hktd5n50-datasheet.pdf) (6 pp, sha256 `0d3d8b419b60ec88`, retrieved 2026-11-04, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/hktd5n50-datasheet.pdf)