component
HKTD5N50
Public Made by Adomby adom
Guangdong Hottech MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownHKTD5N50
Guangdong Hottech · MOSFETs · TO-252
HKTD5N50 from Guangdong Hottech, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; the gate-source voltage is rated at ±30 V maximum, with a threshold of 2.0 V min to 4.0 V max at ID=250µA. |
| 2 | D | passive | Drain, connected to the exposed tab; drain-source voltage is rated at 500 V and continuous drain current at 5 A. |
| 3 | S | passive | Source; body diode forward current is rated at 5 A continuous and 16 A pulsed. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Guangdong Hottech |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDS | 500 | V | 1 | |||
| Gate-source voltage | VGS | -30 | 30 | V | 1 | ||
| Continuous drain current | ID | 5 | A | VGS=10V | 1 | ||
| Pulsed drain current | IDM | 16 | A | 1 | |||
| Power dissipation | PD | 22 | 1 | ||||
| Thermal resistance from junction to ambient | RθJA | 110 | C/W | 1 | |||
| Operating junction and storage temperature | TJ,TSTG | -55 | 150 | °C | 1 | ||
| Single Pulsed Avalanche Energy | EAS | 12 | mJ | VDD=20V, L=0.5mH, RG=25Ω, Starting TJ=25°C | 1 | ||
| Lead temperature for soldering purposes | TL | 260 | °C | 1/8 inch from case for 10s | 1 | ||
| Transient thermal impedance, junction to case | ZθJC(t) | 1.67 | °C/W | Duty = t/T, see Figure 9 | 4 | ||
| Drain-source breakdown voltage | V(BR)DSS | 500 | V | VGS=0V, ID=250μA | 2 | ||
| Zero gate voltage drain current | IDSS | 100 | nA | VDS=500V, VGS=0V | 2 | ||
| Gate-body leakage current | IGSS | -90 | 90 | nA | VDS=0V, VGS=±30V | 2 | |
| Gate-threshold voltage | VGS(th) | 2 | 4 | V | VDS=VGS, ID=250μA | 2 | |
| Drain-source on-resistance | RDS(ON) | 1.45 | 1.7 | Ω | VGS=10V, ID=1A | 2 | |
| Drain-source on-resistance | RDS(ON) | 1.35 | 1.6 | Ω | VGS=10V, ID=2.5A | 2 | |
| Forward transconductance | gFS | 5 | S | VDS=40V, ID=2A | 2 | ||
| Diode forward voltage | VSD | 1.5 | V | IS=5A, VGS=0V | 2 | ||
| Max. forward current | IS | 5 | A | 2 | |||
| Pulsed drain-source diode forward current | ISM | 16 | A | 2 |
CAD (KiCad official)
- Symbol:
HKTD5N50 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
hktd5n50-etched.step/hktd5n50-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hktd5n50.step/hktd5n50.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Guangdong Hottech datasheet (6 pp, sha256
0d3d8b419b60ec88, retrieved 2026-11-04, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).