main
Ray Set visibility: public e09c4ab 6d ago
{
  "schema_version": 1,
  "type": "component",
  "slug": "himw65r048m1h",
  "title": "HIMW65R048M1H",
  "brief": "HXY MOSFET Silicon Carbide Field Effect Transistor (MOSFET), TO-247-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
  "version": "0.1.0",
  "license": "CC-BY-SA-4.0",
  "tags": [
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    "himw65r048m1h",
    "factory-2.0.0",
    "extractor-text"
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  "component": {
    "mpn": "HIMW65R048M1H",
    "manufacturer": "HXY MOSFET",
    "package": "TO-247-3",
    "pin_count": 3,
    "category": "Silicon Carbide (SiC) Devices",
    "subcategory": "Silicon Carbide Field Effect Transistor (MOSFET)",
    "datasheet": "https://datasheet.lcsc.com/datasheet/pdf/02eba78d0339ee791bde0f2d8756f7db.pdf",
    "parts": {
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      "model_3d_plain": "himw65r048m1h-etched.glb",
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      "model_3d_step_plain": "himw65r048m1h.step",
      "lbr": "himw65r048m1h.lbr"
    },
    "distributor_links": {
      "lcsc": "C42389151"
    },
    "distributor_check": {
      "checked_at": "2026-10-30T12:00:17Z",
      "source": "Component Ocean /api/assign-pns",
      "digikey": {
        "pn": null,
        "status": "no match"
      },
      "mouser": {
        "pn": null,
        "status": "no match"
      }
    },
    "pins": [
      {
        "number": "1",
        "name": "G",
        "type": "input",
        "description": "Gate; drive with VGS of -5/+20 V recommended, absolute maximum dynamic -10/+25 V."
      },
      {
        "number": "2",
        "name": "D",
        "type": "passive",
        "description": "Drain; drain-source voltage rated 650 V and continuous current 49 A at TC = 25 °C."
      },
      {
        "number": "3",
        "name": "S",
        "type": "passive",
        "description": "Source; power source terminal of the MOSFET and body diode."
      }
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        "primary_mode": "text+vision",
        "consensus_model": "claude-opus-5-5",
        "consensus": "agreed",
        "guards": "pin_guards 0.1: passed",
        "guard_notes": [
          "extractor flagged: Features mention a separate driver source pin, but the TO-247-3 package has only 3 leads and the sym",
          "vision extraction: provenance cannot be text-verified; needs consensus"
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        "pages_sent": 8,
        "cost_usd": 0.2282,
        "at": "2026-10-30T12:00:00"
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        "pages": 8,
        "sha256": "ef0c163893632919",
        "source_tier": "lcsc"
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      "cad": "KiCad official (CC-BY-SA 4.0)",
      "pins": {
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        "described": 3,
        "cites_pages": true,
        "refuses_to_fabricate": true
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        "role": "plain",
        "up": "Z",
        "units": "mm",
        "origin": "footprint origin = pad-pattern centre",
        "seat": "body on z = 0, through-hole leads below",
        "extents_mm": [
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          41.1
        ],
        "zmin_mm": -15.83,
        "centre_offset_mm": 0.185,
        "footprint_binding": "identity",
        "sha256": "ec0db59b04bcea2e0db6f976bf3ab8644e761c8b0059239f77f4febd6dc9eff4",
        "checked": "2026-10-30",
        "checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
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        "sha256": "5f055c7b7e36705875a19f6e8749d7a2be1d8a70f6b8fd651dc2b429babad76d",
        "checked": "2026-10-30",
        "checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
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  },
  "metadata": {
    "specs": {
      "Manufacturer": "HXY MOSFET",
      "Package": "TO-247-3",
      "Category": "Silicon Carbide (SiC) Devices",
      "Pins": "3"
    },
    "characteristics": {
      "version": 1,
      "source": "datasheet",
      "datasheet_sha256": "ef0c163893632919d3da74e8bd23bf5a3065d8ab8ba908e77bc3bf6797b96f52",
      "rows": [
        {
          "name": "Drain-source voltage",
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          "kind": "absolute_maximum",
          "unit": "V",
          "min": null,
          "typ": null,
          "max": 650,
          "conditions": "TC = 25°C",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Continuous drain current",
          "symbol": "ID",
          "kind": "absolute_maximum",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": 49,
          "conditions": "TC = 25°C",
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          "source": "datasheet"
        },
        {
          "name": "Continuous drain current",
          "symbol": "ID",
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          "unit": "A",
          "min": null,
          "typ": null,
          "max": 35,
          "conditions": "TC = 100°C",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Pulsed drain current",
          "symbol": "ID pulse",
          "kind": "absolute_maximum",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": 123,
          "conditions": "TC = 25°C, tp limited by Tjmax",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Gate-Source voltage",
          "symbol": "VGS",
          "kind": "absolute_maximum",
          "unit": "V",
          "min": -5,
          "typ": null,
          "max": 20,
          "conditions": "",
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          "source": "datasheet"
        },
        {
          "name": "Gate-Source voltage (dynamic, absolute maximum values)",
          "symbol": "VGSmax",
          "kind": "absolute_maximum",
          "unit": "V",
          "min": -10,
          "typ": null,
          "max": 25,
          "conditions": "",
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        },
        {
          "name": "Power dissipation",
          "symbol": "Ptot",
          "kind": "absolute_maximum",
          "unit": "W",
          "min": null,
          "typ": null,
          "max": 242,
          "conditions": "TC = 25°C",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Avalanche energy, single pulse",
          "symbol": "EAS",
          "kind": "absolute_maximum",
          "unit": "mJ",
          "min": null,
          "typ": null,
          "max": 1000,
          "conditions": "L=10mH",
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        },
        {
          "name": "Operating junction and storage temperature",
          "symbol": "Tj, Tstg",
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          "unit": "°C",
          "min": -55,
          "typ": null,
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          "conditions": "",
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        {
          "name": "Thermal resistance, junction-case",
          "symbol": "RthJC",
          "kind": "thermal",
          "unit": "°C/W",
          "min": null,
          "typ": null,
          "max": 0.62,
          "conditions": "Max",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Thermal resistance, junction-ambient",
          "symbol": "RthJA",
          "kind": "thermal",
          "unit": "°C/W",
          "min": null,
          "typ": null,
          "max": 40,
          "conditions": "Max",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Drain-source breakdown voltage",
          "symbol": "BVDSS",
          "kind": "electrical",
          "unit": "V",
          "min": 650,
          "typ": null,
          "max": null,
          "conditions": "VGS=0V, ID=250uA",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Gate threshold voltage",
          "symbol": "VGS(th)",
          "kind": "electrical",
          "unit": "V",
          "min": 2,
          "typ": null,
          "max": 4,
          "conditions": "VDS=VGS, ID=7mA",
          "source_page": 2,
          "source": "datasheet"
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  "discovery_triggers": [
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  "discovery_pitch": "HIMW65R048M1H (HXY MOSFET) component page: datasheet pinout, KiCad symbol, footprint and 3D.",
  "author": {
    "name": "Ray",
    "email": "[email protected]"
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