component

HIMW65R048M1H

Public Made by Adom

by adom

HXY MOSFET Silicon Carbide Field Effect Transistor (MOSFET), TO-247-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componentsilicon carbide (sic) deviceshimw65r048m1hfactory-2.0.0extractor-text

Verified HIMW65R048M1H

by Ray · last 30 Oct 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

30 Oct 2026RayPublished by the parts factory: tier lcsc, 3 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: HIMW65R048M1H · TO-247-3 · 3 pins
  • ✓copper: 3 copper pads, none touching another net
  • ✓datasheet: all 3 pin names found in the 8-page datasheet
  • •distributor (warn): no ['digikey', 'mouser'] number
  • ✓family: TO-247-3_Vertical
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-1fyp66lh/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • •package_fit (skip): no component.package_dims on the page: the model is unchecked against the datasheet drawing
  • ✓pads: 3 pins = 3 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 3 pins agree
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ himw65r048m1h.kicad_sym✓ himw65r048m1h.kicad_mod✓ himw65r048m1h.step
Spot something wrong? Report it as an issue Propose a fix Records are signed by members of adom.
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity

3D Model

Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

Symbol & Footprint

Schematic Symbol

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

PCB Footprint

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

Datasheet

Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Download PDF
Contents

README

markdown

HIMW65R048M1H

HXY MOSFET · Silicon Carbide Field Effect Transistor (MOSFET) · TO-247-3

HIMW65R048M1H from HXY MOSFET, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; drive with VGS of -5/+20 V recommended, absolute maximum dynamic -10/+25 V.
2 D passive Drain; drain-source voltage rated 650 V and continuous current 49 A at TC = 25 °C.
3 S passive Source; power source terminal of the MOSFET and body diode.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package TO-247-3
Category Silicon Carbide (SiC) Devices
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source voltage VDS 650 V TC = 25°C 1
Continuous drain current ID 49 A TC = 25°C 1
Continuous drain current ID 35 A TC = 100°C 1
Pulsed drain current ID pulse 123 A TC = 25°C, tp limited by Tjmax 1
Gate-Source voltage VGS -5 20 V 1
Gate-Source voltage (dynamic, absolute maximum values) VGSmax -10 25 V 1
Power dissipation Ptot 242 W TC = 25°C 1
Avalanche energy, single pulse EAS 1000 mJ L=10mH 1
Operating junction and storage temperature Tj, Tstg -55 175 °C 1
Thermal resistance, junction-case RthJC 0.62 °C/W Max 1
Thermal resistance, junction-ambient RthJA 40 °C/W Max 1
Drain-source breakdown voltage BVDSS 650 V VGS=0V, ID=250uA 2
Gate threshold voltage VGS(th) 2 4 V VDS=VGS, ID=7mA 2

CAD (KiCad official)

  • Symbol: HIMW65R048M1H
  • Footprint: Package_TO_SOT_THT:TO-247-3_Vertical
  • 3D model: TO-247-3 (KiCad packages3D, STEP)
  • 3D model files: himw65r048m1h-etched.step / himw65r048m1h-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); himw65r048m1h.step / himw65r048m1h.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (8 pp, sha256 ef0c163893632919, retrieved 2026-10-30, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF