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HIMW120R220M1H
Public Made by Adomby adom
HXY MOSFET Silicon Carbide Field Effect Transistor (MOSFET), TO-247-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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HIMW120R220M1H
HXY MOSFET · Silicon Carbide Field Effect Transistor (MOSFET) · TO-247-3
HIMW120R220M1H from HXY MOSFET, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate control terminal with recommended gate-source drive of -4/+18 V and absolute maximum dynamic gate-source voltage of -8/+22 V. |
| 2 | D | passive | Drain terminal rated for 1200 V drain-source voltage and 17 A continuous current at TC=25°C (12 A at TC=100°C). |
| 3 | S | passive | Source terminal, which also connects to the anode of the intrinsic body diode shown in the symbol. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | TO-247-3 |
| Category | Silicon Carbide (SiC) Devices |
| Pins | 3 |
CAD (KiCad official)
- Symbol:
HIMW120R220M1H - Footprint:
Package_TO_SOT_THT:TO-247-3_Vertical - 3D model: TO-247-3 (KiCad packages3D, STEP)
- 3D model files:
himw120r220m1h-etched.step/himw120r220m1h-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);himw120r220m1h.step/himw120r220m1h.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (9 pp, sha256
442d06ec921c217b, retrieved 2026-10-29, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# HIMW120R220M1H
**HXY MOSFET** · Silicon Carbide Field Effect Transistor (MOSFET) · TO-247-3
HIMW120R220M1H from HXY MOSFET, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate control terminal with recommended gate-source drive of -4/+18 V and absolute maximum dynamic gate-source voltage of -8/+22 V. |
| 2 | D | passive | Drain terminal rated for 1200 V drain-source voltage and 17 A continuous current at TC=25°C (12 A at TC=100°C). |
| 3 | S | passive | Source terminal, which also connects to the anode of the intrinsic body diode shown in the symbol. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | TO-247-3 |
| Category | Silicon Carbide (SiC) Devices |
| Pins | 3 |
## CAD (KiCad official)
- Symbol: `HIMW120R220M1H`
- Footprint: `Package_TO_SOT_THT:TO-247-3_Vertical`
- 3D model: TO-247-3 (KiCad packages3D, STEP)
- 3D model files: `himw120r220m1h-etched.step` / `himw120r220m1h-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `himw120r220m1h.step` / `himw120r220m1h.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [HXY MOSFET datasheet](docs/himw120r220m1h-datasheet.pdf) (9 pp, sha256 `442d06ec921c217b`, retrieved 2026-10-29, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/himw120r220m1h-datasheet.pdf)