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HIMW120R220M1H

HXY MOSFET · Silicon Carbide Field Effect Transistor (MOSFET) · TO-247-3

HIMW120R220M1H from HXY MOSFET, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate control terminal with recommended gate-source drive of -4/+18 V and absolute maximum dynamic gate-source voltage of -8/+22 V.
2 D passive Drain terminal rated for 1200 V drain-source voltage and 17 A continuous current at TC=25°C (12 A at TC=100°C).
3 S passive Source terminal, which also connects to the anode of the intrinsic body diode shown in the symbol.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package TO-247-3
Category Silicon Carbide (SiC) Devices
Pins 3

CAD (KiCad official)

  • Symbol: HIMW120R220M1H
  • Footprint: Package_TO_SOT_THT:TO-247-3_Vertical
  • 3D model: TO-247-3 (KiCad packages3D, STEP)
  • 3D model files: himw120r220m1h-etched.step / himw120r220m1h-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); himw120r220m1h.step / himw120r220m1h.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (9 pp, sha256 442d06ec921c217b, retrieved 2026-10-29, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF