HFDS8958B

HXY MOSFET · MOSFETs · SOP-8

HFDS8958B from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	S1	passive	Source of MOSFET 1 of the dual N+P pair, rated for VDS of 30V (N-channel) or -30V (P-channel) per the datasheet ratings.
2	G1	input	Gate of MOSFET 1, with a maximum gate-source voltage of ±20V.
3	S2	passive	Source of MOSFET 2 of the dual N+P pair, rated for VDS of 30V (N-channel) or -30V (P-channel) per the datasheet ratings.
4	G2	input	Gate of MOSFET 2, with a maximum gate-source voltage of ±20V.
5	D2	passive	Drain of MOSFET 2, connected internally with pin 6 and carrying up to 6A (N-channel) or -5.5A (P-channel) continuous.
6	D2	passive	Drain of MOSFET 2, connected internally with pin 5 and carrying up to 6A (N-channel) or -5.5A (P-channel) continuous.
7	D1	passive	Drain of MOSFET 1, connected internally with pin 8 and carrying up to 6A (N-channel) or -5.5A (P-channel) continuous.
8	D1	passive	Drain of MOSFET 1, connected internally with pin 7 and carrying up to 6A (N-channel) or -5.5A (P-channel) continuous.

Key specifications

Parameter	Value
Manufacturer	HXY MOSFET
Package	SOP-8
Category	Transistors/Thyristors
Pins	8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
N-ch Drain-Source Voltage	VDS			30	V	N-Channel	1
P-ch Drain-Source Voltage	VDS			-30	V	P-Channel	1
N-ch Gate-Source Voltage	VGS	-20		20	V	N-Channel	1
P-ch Gate-Source Voltage	VGS	-20		20	V	P-Channel	1
N-ch Continuous Drain Current	ID			6	A	TA=25℃, VGS @ 10V	1
P-ch Continuous Drain Current	ID			-5.5	A	TA=25℃, VGS @ 10V	1
N-ch Continuous Drain Current	ID			5	A	TA=70℃, VGS @ 10V	1
P-ch Continuous Drain Current	ID			-4.3	A	TA=70℃, VGS @ 10V	1
N-ch Pulsed Drain Current	IDM			30	A	N-Channel	1
P-ch Pulsed Drain Current	IDM			-30	A	P-Channel	1
N-ch Single Pulse Avalanche Energy	EAS			5	mJ	N-Channel	1
P-ch Single Pulse Avalanche Energy	EAS			26	mJ	P-Channel	1
Total Power Dissipation (each channel)	PD			2	W	TA=25℃	1
Storage Temperature Range	TSTG	-55		150	℃		1
Operating Junction Temperature Range	TJ	-55		150	℃		1
Thermal Resistance Junction-Ambient	RθJA			62.5	℃/W		1
Thermal Resistance Junction-Case	RθJC			40	℃/W		1
N-ch Drain-Source Breakdown Voltage	BVDSS	30			V	ID=250µA, VGS=0V	2
N-ch Zero Gate Voltage Drain Current	IDSS			1	µA	VDS=30V, VGS=0V	2
N-ch Zero Gate Voltage Drain Current	IDSS			5	µA	VDS=30V, VGS=0V, TJ=55°C	2
N-ch Gate-Body leakage current	IGSS			100	nA	VDS=0V, VGS=±20V	2
N-ch Gate Threshold Voltage	VGS(th)	1.2	1.8	2.4	V	VDS=VGS ID=250µA	2
N-ch On state drain current	ID(ON)	30			A	VGS=10V, VDS=5V	2
N-ch Static Drain-Source On-Resistance	RDS(ON)		16	22	mΩ	VGS=10V, ID=6A	2
N-ch Static Drain-Source On-Resistance	RDS(ON)		22	30	mΩ	VGS=4.5V, ID=5A	2
N-ch Static Drain-Source On-Resistance	RDS(ON)		32	40	mΩ	VGS=10V, ID=6A, TJ=125°C	2
N-ch Forward Transconductance	gFS		15		S	VDS=5V, ID=6A	2
N-ch Diode Forward Voltage	VSD		0.76	1	V	IS=1A,VGS=0V	2
N-ch Maximum Body-Diode Continuous Current	IS			2.5	A		2
N-ch Input Capacitance	Ciss	200	255	310	pF	VGS=0V, VDS=15V, f=1MHz	2
N-ch Output Capacitance	Coss	30	45	60	pF	VGS=0V, VDS=15V, f=1MHz	2
N-ch Reverse Transfer Capacitance	Crss	20	35	50	pF	VGS=0V, VDS=15V, f=1MHz	2
N-ch Gate resistance	Rg	1.6	3.25	4.9	Ω	VGS=0V, VDS=0V, f=1MHz	2
N-ch Total Gate Charge (10V)	Qg	4	5.2	6	nC	VGS=10V, VDS=15V, ID=6A	2
N-ch Total Gate Charge (4.5V)	Qg	2	2.55	3	nC	VGS=4.5V, VDS=15V, ID=6A	2
N-ch Body Diode Reverse Recovery Time	trr		8.5	12	ns	IF=6A, dI/dt=100A/µs	2
N-ch Body Diode Reverse Recovery Charge	Qrr		2.2	3	nC	IF=6A, dI/dt=100A/µs	2
P-ch Drain-Source Breakdown Voltage	BVDSS			-30	V	ID=-250µA, VGS=0V	6
P-ch Zero Gate Voltage Drain Current	IDSS			-1	µA	VDS=-30V, VGS=0V	6
P-ch Zero Gate Voltage Drain Current	IDSS			-5	µA	VDS=-30V, VGS=0V, TJ=55°C	6
P-ch Gate-Body leakage current	IGSS			100	nA	VDS=0V, VGS=±20V	6
P-ch Gate Threshold Voltage	VGS(th)	-1.3	-1.85	-2.4	V	VDS=VGS ID=-250µA	6
P-ch On state drain current	ID(ON)			-30	A	VGS=-10V, VDS=-5V	6
P-ch Static Drain-Source On-Resistance	RDS(ON)		36	45	mΩ	VGS=-10V, ID=-6.5A	6
P-ch Static Drain-Source On-Resistance	RDS(ON)		32	40	mΩ	TJ=125°C	6
P-ch Static Drain-Source On-Resistance	RDS(ON)		68	77	mΩ	VGS=-4.5V, ID=-5A	6
P-ch Forward Transconductance	gFS		18		S	VDS=-5V, ID=-6.5A	6
P-ch Diode Forward Voltage	VSD		-0.8	-1	V	IS=-1A,VGS=0V	6
P-ch Maximum Body-Diode Continuous Current	IS			-2.5	A		6
P-ch Gate resistance	Rg	1.5	3.2	5	Ω	VGS=0V, VDS=0V, f=1MHz	6
P-ch Total Gate Charge (10V)	Qg		13.6	16	nC	VGS=10V, VDS=-15V, ID=-6.5A	6
P-ch Total Gate Charge (4.5V)	Qg		6.7	8	nC		6
P-ch Body Diode Reverse Recovery Time	trr			15	ns	IF=-6.5A, dI/dt=100A/µs	6
P-ch Input Capacitance	Ciss		760		pF	VGS=0V, VDS=-15V, f=1MHz	6
P-ch Output Capacitance	Coss		140		pF	VGS=0V, VDS=-15V, f=1MHz	6
P-ch Reverse Transfer Capacitance	Crss		95		pF	VGS=0V, VDS=-15V, f=1MHz	6

CAD (KiCad official)

Symbol: HFDS8958B
Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
3D model: SOP-8 (KiCad packages3D, STEP)
3D model files: hfds8958b-etched.step / hfds8958b-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hfds8958b.step / hfds8958b.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: HXY MOSFET datasheet (11 pp, sha256 e954d2fd8a3b324f, retrieved 2026-10-27, tier: lcsc)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF

# HFDS8958B

**HXY MOSFET** · MOSFETs · SOP-8

HFDS8958B from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of MOSFET 1 of the dual N+P pair, rated for VDS of 30V (N-channel) or -30V (P-channel) per the datasheet ratings. |
| 2 | G1 | input | Gate of MOSFET 1, with a maximum gate-source voltage of ±20V. |
| 3 | S2 | passive | Source of MOSFET 2 of the dual N+P pair, rated for VDS of 30V (N-channel) or -30V (P-channel) per the datasheet ratings. |
| 4 | G2 | input | Gate of MOSFET 2, with a maximum gate-source voltage of ±20V. |
| 5 | D2 | passive | Drain of MOSFET 2, connected internally with pin 6 and carrying up to 6A (N-channel) or -5.5A (P-channel) continuous. |
| 6 | D2 | passive | Drain of MOSFET 2, connected internally with pin 5 and carrying up to 6A (N-channel) or -5.5A (P-channel) continuous. |
| 7 | D1 | passive | Drain of MOSFET 1, connected internally with pin 8 and carrying up to 6A (N-channel) or -5.5A (P-channel) continuous. |
| 8 | D1 | passive | Drain of MOSFET 1, connected internally with pin 7 and carrying up to 6A (N-channel) or -5.5A (P-channel) continuous. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| N-ch Drain-Source Voltage | VDS |  |  | 30 | V | N-Channel | 1 |
| P-ch Drain-Source Voltage | VDS |  |  | -30 | V | P-Channel | 1 |
| N-ch Gate-Source Voltage | VGS | -20 |  | 20 | V | N-Channel | 1 |
| P-ch Gate-Source Voltage | VGS | -20 |  | 20 | V | P-Channel | 1 |
| N-ch Continuous Drain Current | ID |  |  | 6 | A | TA=25℃, VGS @ 10V | 1 |
| P-ch Continuous Drain Current | ID |  |  | -5.5 | A | TA=25℃, VGS @ 10V | 1 |
| N-ch Continuous Drain Current | ID |  |  | 5 | A | TA=70℃, VGS @ 10V | 1 |
| P-ch Continuous Drain Current | ID |  |  | -4.3 | A | TA=70℃, VGS @ 10V | 1 |
| N-ch Pulsed Drain Current | IDM |  |  | 30 | A | N-Channel | 1 |
| P-ch Pulsed Drain Current | IDM |  |  | -30 | A | P-Channel | 1 |
| N-ch Single Pulse Avalanche Energy | EAS |  |  | 5 | mJ | N-Channel | 1 |
| P-ch Single Pulse Avalanche Energy | EAS |  |  | 26 | mJ | P-Channel | 1 |
| Total Power Dissipation (each channel) | PD |  |  | 2 | W | TA=25℃ | 1 |
| Storage Temperature Range | TSTG | -55 |  | 150 | ℃ |  | 1 |
| Operating Junction Temperature Range | TJ | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance Junction-Ambient | RθJA |  |  | 62.5 | ℃/W |  | 1 |
| Thermal Resistance Junction-Case | RθJC |  |  | 40 | ℃/W |  | 1 |
| N-ch Drain-Source Breakdown Voltage | BVDSS | 30 |  |  | V | ID=250µA, VGS=0V | 2 |
| N-ch Zero Gate Voltage Drain Current | IDSS |  |  | 1 | µA | VDS=30V, VGS=0V | 2 |
| N-ch Zero Gate Voltage Drain Current | IDSS |  |  | 5 | µA | VDS=30V, VGS=0V, TJ=55°C | 2 |
| N-ch Gate-Body leakage current | IGSS |  |  | 100 | nA | VDS=0V, VGS=±20V | 2 |
| N-ch Gate Threshold Voltage | VGS(th) | 1.2 | 1.8 | 2.4 | V | VDS=VGS ID=250µA | 2 |
| N-ch On state drain current | ID(ON) | 30 |  |  | A | VGS=10V, VDS=5V | 2 |
| N-ch Static Drain-Source On-Resistance | RDS(ON) |  | 16 | 22 | mΩ | VGS=10V, ID=6A | 2 |
| N-ch Static Drain-Source On-Resistance | RDS(ON) |  | 22 | 30 | mΩ | VGS=4.5V, ID=5A | 2 |
| N-ch Static Drain-Source On-Resistance | RDS(ON) |  | 32 | 40 | mΩ | VGS=10V, ID=6A, TJ=125°C | 2 |
| N-ch Forward Transconductance | gFS |  | 15 |  | S | VDS=5V, ID=6A | 2 |
| N-ch Diode Forward Voltage | VSD |  | 0.76 | 1 | V | IS=1A,VGS=0V | 2 |
| N-ch Maximum Body-Diode Continuous Current | IS |  |  | 2.5 | A |  | 2 |
| N-ch Input Capacitance | Ciss | 200 | 255 | 310 | pF | VGS=0V, VDS=15V, f=1MHz | 2 |
| N-ch Output Capacitance | Coss | 30 | 45 | 60 | pF | VGS=0V, VDS=15V, f=1MHz | 2 |
| N-ch Reverse Transfer Capacitance | Crss | 20 | 35 | 50 | pF | VGS=0V, VDS=15V, f=1MHz | 2 |
| N-ch Gate resistance | Rg | 1.6 | 3.25 | 4.9 | Ω | VGS=0V, VDS=0V, f=1MHz | 2 |
| N-ch Total Gate Charge (10V) | Qg | 4 | 5.2 | 6 | nC | VGS=10V, VDS=15V, ID=6A | 2 |
| N-ch Total Gate Charge (4.5V) | Qg | 2 | 2.55 | 3 | nC | VGS=4.5V, VDS=15V, ID=6A | 2 |
| N-ch Body Diode Reverse Recovery Time | trr |  | 8.5 | 12 | ns | IF=6A, dI/dt=100A/µs | 2 |
| N-ch Body Diode Reverse Recovery Charge | Qrr |  | 2.2 | 3 | nC | IF=6A, dI/dt=100A/µs | 2 |
| P-ch Drain-Source Breakdown Voltage | BVDSS |  |  | -30 | V | ID=-250µA, VGS=0V | 6 |
| P-ch Zero Gate Voltage Drain Current | IDSS |  |  | -1 | µA | VDS=-30V, VGS=0V | 6 |
| P-ch Zero Gate Voltage Drain Current | IDSS |  |  | -5 | µA | VDS=-30V, VGS=0V, TJ=55°C | 6 |
| P-ch Gate-Body leakage current | IGSS |  |  | 100 | nA | VDS=0V, VGS=±20V | 6 |
| P-ch Gate Threshold Voltage | VGS(th) | -1.3 | -1.85 | -2.4 | V | VDS=VGS ID=-250µA | 6 |
| P-ch On state drain current | ID(ON) |  |  | -30 | A | VGS=-10V, VDS=-5V | 6 |
| P-ch Static Drain-Source On-Resistance | RDS(ON) |  | 36 | 45 | mΩ | VGS=-10V, ID=-6.5A | 6 |
| P-ch Static Drain-Source On-Resistance | RDS(ON) |  | 32 | 40 | mΩ | TJ=125°C | 6 |
| P-ch Static Drain-Source On-Resistance | RDS(ON) |  | 68 | 77 | mΩ | VGS=-4.5V, ID=-5A | 6 |
| P-ch Forward Transconductance | gFS |  | 18 |  | S | VDS=-5V, ID=-6.5A | 6 |
| P-ch Diode Forward Voltage | VSD |  | -0.8 | -1 | V | IS=-1A,VGS=0V | 6 |
| P-ch Maximum Body-Diode Continuous Current | IS |  |  | -2.5 | A |  | 6 |
| P-ch Gate resistance | Rg | 1.5 | 3.2 | 5 | Ω | VGS=0V, VDS=0V, f=1MHz | 6 |
| P-ch Total Gate Charge (10V) | Qg |  | 13.6 | 16 | nC | VGS=10V, VDS=-15V, ID=-6.5A | 6 |
| P-ch Total Gate Charge (4.5V) | Qg |  | 6.7 | 8 | nC |  | 6 |
| P-ch Body Diode Reverse Recovery Time | trr |  |  | 15 | ns | IF=-6.5A, dI/dt=100A/µs | 6 |
| P-ch Input Capacitance | Ciss |  | 760 |  | pF | VGS=0V, VDS=-15V, f=1MHz | 6 |
| P-ch Output Capacitance | Coss |  | 140 |  | pF | VGS=0V, VDS=-15V, f=1MHz | 6 |
| P-ch Reverse Transfer Capacitance | Crss |  | 95 |  | pF | VGS=0V, VDS=-15V, f=1MHz | 6 |

## CAD (KiCad official)

- Symbol: `HFDS8958B`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `hfds8958b-etched.step` / `hfds8958b-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `hfds8958b.step` / `hfds8958b.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HXY MOSFET datasheet](docs/hfds8958b-datasheet.pdf) (11 pp, sha256 `e954d2fd8a3b324f`, retrieved 2026-10-27, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/hfds8958b-datasheet.pdf)