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HFDS8958B

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HXY MOSFET MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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HFDS8958B

HXY MOSFET · MOSFETs · SOP-8

HFDS8958B from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of MOSFET 1 of the dual N+P pair, rated for VDS of 30V (N-channel) or -30V (P-channel) per the datasheet ratings.
2 G1 input Gate of MOSFET 1, with a maximum gate-source voltage of ±20V.
3 S2 passive Source of MOSFET 2 of the dual N+P pair, rated for VDS of 30V (N-channel) or -30V (P-channel) per the datasheet ratings.
4 G2 input Gate of MOSFET 2, with a maximum gate-source voltage of ±20V.
5 D2 passive Drain of MOSFET 2, connected internally with pin 6 and carrying up to 6A (N-channel) or -5.5A (P-channel) continuous.
6 D2 passive Drain of MOSFET 2, connected internally with pin 5 and carrying up to 6A (N-channel) or -5.5A (P-channel) continuous.
7 D1 passive Drain of MOSFET 1, connected internally with pin 8 and carrying up to 6A (N-channel) or -5.5A (P-channel) continuous.
8 D1 passive Drain of MOSFET 1, connected internally with pin 7 and carrying up to 6A (N-channel) or -5.5A (P-channel) continuous.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
N-ch Drain-Source Voltage VDS 30 V N-Channel 1
P-ch Drain-Source Voltage VDS -30 V P-Channel 1
N-ch Gate-Source Voltage VGS -20 20 V N-Channel 1
P-ch Gate-Source Voltage VGS -20 20 V P-Channel 1
N-ch Continuous Drain Current ID 6 A TA=25℃, VGS @ 10V 1
P-ch Continuous Drain Current ID -5.5 A TA=25℃, VGS @ 10V 1
N-ch Continuous Drain Current ID 5 A TA=70℃, VGS @ 10V 1
P-ch Continuous Drain Current ID -4.3 A TA=70℃, VGS @ 10V 1
N-ch Pulsed Drain Current IDM 30 A N-Channel 1
P-ch Pulsed Drain Current IDM -30 A P-Channel 1
N-ch Single Pulse Avalanche Energy EAS 5 mJ N-Channel 1
P-ch Single Pulse Avalanche Energy EAS 26 mJ P-Channel 1
Total Power Dissipation (each channel) PD 2 W TA=25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-Ambient RθJA 62.5 ℃/W 1
Thermal Resistance Junction-Case RθJC 40 ℃/W 1
N-ch Drain-Source Breakdown Voltage BVDSS 30 V ID=250µA, VGS=0V 2
N-ch Zero Gate Voltage Drain Current IDSS 1 µA VDS=30V, VGS=0V 2
N-ch Zero Gate Voltage Drain Current IDSS 5 µA VDS=30V, VGS=0V, TJ=55°C 2
N-ch Gate-Body leakage current IGSS 100 nA VDS=0V, VGS=±20V 2
N-ch Gate Threshold Voltage VGS(th) 1.2 1.8 2.4 V VDS=VGS ID=250µA 2
N-ch On state drain current ID(ON) 30 A VGS=10V, VDS=5V 2
N-ch Static Drain-Source On-Resistance RDS(ON) 16 22 mΩ VGS=10V, ID=6A 2
N-ch Static Drain-Source On-Resistance RDS(ON) 22 30 mΩ VGS=4.5V, ID=5A 2
N-ch Static Drain-Source On-Resistance RDS(ON) 32 40 mΩ VGS=10V, ID=6A, TJ=125°C 2
N-ch Forward Transconductance gFS 15 S VDS=5V, ID=6A 2
N-ch Diode Forward Voltage VSD 0.76 1 V IS=1A,VGS=0V 2
N-ch Maximum Body-Diode Continuous Current IS 2.5 A 2
N-ch Input Capacitance Ciss 200 255 310 pF VGS=0V, VDS=15V, f=1MHz 2
N-ch Output Capacitance Coss 30 45 60 pF VGS=0V, VDS=15V, f=1MHz 2
N-ch Reverse Transfer Capacitance Crss 20 35 50 pF VGS=0V, VDS=15V, f=1MHz 2
N-ch Gate resistance Rg 1.6 3.25 4.9 Ω VGS=0V, VDS=0V, f=1MHz 2
N-ch Total Gate Charge (10V) Qg 4 5.2 6 nC VGS=10V, VDS=15V, ID=6A 2
N-ch Total Gate Charge (4.5V) Qg 2 2.55 3 nC VGS=4.5V, VDS=15V, ID=6A 2
N-ch Body Diode Reverse Recovery Time trr 8.5 12 ns IF=6A, dI/dt=100A/µs 2
N-ch Body Diode Reverse Recovery Charge Qrr 2.2 3 nC IF=6A, dI/dt=100A/µs 2
P-ch Drain-Source Breakdown Voltage BVDSS -30 V ID=-250µA, VGS=0V 6
P-ch Zero Gate Voltage Drain Current IDSS -1 µA VDS=-30V, VGS=0V 6
P-ch Zero Gate Voltage Drain Current IDSS -5 µA VDS=-30V, VGS=0V, TJ=55°C 6
P-ch Gate-Body leakage current IGSS 100 nA VDS=0V, VGS=±20V 6
P-ch Gate Threshold Voltage VGS(th) -1.3 -1.85 -2.4 V VDS=VGS ID=-250µA 6
P-ch On state drain current ID(ON) -30 A VGS=-10V, VDS=-5V 6
P-ch Static Drain-Source On-Resistance RDS(ON) 36 45 mΩ VGS=-10V, ID=-6.5A 6
P-ch Static Drain-Source On-Resistance RDS(ON) 32 40 mΩ TJ=125°C 6
P-ch Static Drain-Source On-Resistance RDS(ON) 68 77 mΩ VGS=-4.5V, ID=-5A 6
P-ch Forward Transconductance gFS 18 S VDS=-5V, ID=-6.5A 6
P-ch Diode Forward Voltage VSD -0.8 -1 V IS=-1A,VGS=0V 6
P-ch Maximum Body-Diode Continuous Current IS -2.5 A 6
P-ch Gate resistance Rg 1.5 3.2 5 Ω VGS=0V, VDS=0V, f=1MHz 6
P-ch Total Gate Charge (10V) Qg 13.6 16 nC VGS=10V, VDS=-15V, ID=-6.5A 6
P-ch Total Gate Charge (4.5V) Qg 6.7 8 nC 6
P-ch Body Diode Reverse Recovery Time trr 15 ns IF=-6.5A, dI/dt=100A/µs 6
P-ch Input Capacitance Ciss 760 pF VGS=0V, VDS=-15V, f=1MHz 6
P-ch Output Capacitance Coss 140 pF VGS=0V, VDS=-15V, f=1MHz 6
P-ch Reverse Transfer Capacitance Crss 95 pF VGS=0V, VDS=-15V, f=1MHz 6

CAD (KiCad official)

  • Symbol: HFDS8958B
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: hfds8958b-etched.step / hfds8958b-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hfds8958b.step / hfds8958b.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (11 pp, sha256 e954d2fd8a3b324f, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF