component
HESDNC7
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HXY MOSFET ESD And Surge Protection (TVS/ESD), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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HESDNC7
HXY MOSFET · ESD And Surge Protection (TVS/ESD) · SOT-23
HESDNC7 from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | 1 | passive | One terminal of the bidirectional ESD protection diode pair (tied with pin 2 in all electrical characteristics); clamping voltage is max 12 V at IPP = 10 A (8x20 µs) from pin 1/2 to pin 3, and junction capacitance is max 15 pF at 0 V, 1 MHz. |
| 2 | 2 | passive | The second terminal of the bidirectional ESD protection diode pair (tied with pin 1 in all electrical characteristics); clamping voltage is max 12 V at IPP = 10 A (8x20 µs) from pin 1/2 to pin 3, and junction capacitance is max 15 pF at 0 V, 1 MHz. |
| 3 | 3 | passive | Common terminal of the bidirectional protection pair, opposite pins 1 and 2; clamping voltage from pin 3 to pin 1/2 is max 20 V at IPP = 10 A (8x20 µs), and junction capacitance is max 15 pF. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOT-23 |
| Category | Circuit Protection |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Peak Pulse Power | PPP | 200 | W | tp = 8/20μs | 1 | ||
| Maximum lead temperature for soldering | TL | 260 | °C | during 10s | 1 | ||
| Storage Temperature Range | Tstg | -55 | 150 | °C | 1 | ||
| Operating Temperature Range | Top | -55 | 125 | °C | 1 | ||
| Maximum junction temperature | Tj | 150 | °C | 1 | |||
| IEC61000-4-2 ESD air discharge | -30 | 30 | KV | IEC61000-4-2 (ESD) air discharge | 1 | ||
| IEC61000-4-2 ESD contact discharge | -30 | 30 | KV | IEC61000-4-2 (ESD) contact discharge | 1 | ||
| IEC61000-4-4 EFT | 15 | A | IEC61000-4-4 (EFT) | 1 | |||
| Reverse stand-off voltage (Pin 1、2 to Pin 3) | VRWM | 7 | V | Pin 1、2 to Pin 3 | 2 | ||
| Reverse stand-off voltage (Pin 3 to Pin 1、2) | VRWM | 12 | V | Pin 3 to Pin 1、2 | 2 | ||
| Reverse breakdown voltage (Pin 1、2 to Pin 3) | VBR | 7.5 | V | IT = 1 mA, Pin 1、2 to Pin 3 | 2 | ||
| Reverse breakdown voltage (Pin 3 to Pin 1、2) | VBR | 13.3 | V | IT = 1 mA, Pin 3 to Pin 1、2 | 2 | ||
| Reverse leakage current (Pin 1、2 to Pin 3) | IR | 200 | nA | VR = VRWM, Pin 1、2 to Pin 3 | 2 | ||
| Reverse leakage current (Pin 3 to Pin 1、2) | IR | 100 | nA | VR = VRWM, Pin 3 to Pin 1、2 | 2 | ||
| Clamping voltage (Pin 1、2 to Pin 3) | VC | 12 | V | IPP = 10A (8 x 20µs pulse), Pin 1、2 to Pin 3 | 2 | ||
| Clamping voltage (Pin 3 to Pin 1、2) | VC | 20 | V | IPP = 10A (8 x 20µs pulse), Pin 3 to Pin 1 、2 | 2 | ||
| Junction capacitance (Pin 1、2 to Pin 3) | CJ | 15 | pF | VR = 0V, f = 1MHz, Pin 1、2 to Pin 3 | 2 | ||
| Junction capacitance (Pin 3 to Pin 1、2) | CJ | 15 | pF | VR = 0V, f = 1MHz, Pin 3 to Pin 1、2 | 2 |
CAD (KiCad official)
- Symbol:
HESDNC7 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
hesdnc7-etched.step/hesdnc7-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hesdnc7.step/hesdnc7.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (5 pp, sha256
2c98ae0743fbf0c1, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# HESDNC7
**HXY MOSFET** · ESD And Surge Protection (TVS/ESD) · SOT-23
HESDNC7 from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | 1 | passive | One terminal of the bidirectional ESD protection diode pair (tied with pin 2 in all electrical characteristics); clamping voltage is max 12 V at IPP = 10 A (8x20 µs) from pin 1/2 to pin 3, and junction capacitance is max 15 pF at 0 V, 1 MHz. |
| 2 | 2 | passive | The second terminal of the bidirectional ESD protection diode pair (tied with pin 1 in all electrical characteristics); clamping voltage is max 12 V at IPP = 10 A (8x20 µs) from pin 1/2 to pin 3, and junction capacitance is max 15 pF at 0 V, 1 MHz. |
| 3 | 3 | passive | Common terminal of the bidirectional protection pair, opposite pins 1 and 2; clamping voltage from pin 3 to pin 1/2 is max 20 V at IPP = 10 A (8x20 µs), and junction capacitance is max 15 pF. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOT-23 |
| Category | Circuit Protection |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Peak Pulse Power | PPP | | | 200 | W | tp = 8/20μs | 1 |
| Maximum lead temperature for soldering | TL | | | 260 | °C | during 10s | 1 |
| Storage Temperature Range | Tstg | -55 | | 150 | °C | | 1 |
| Operating Temperature Range | Top | -55 | | 125 | °C | | 1 |
| Maximum junction temperature | Tj | | | 150 | °C | | 1 |
| IEC61000-4-2 ESD air discharge | | -30 | | 30 | KV | IEC61000-4-2 (ESD) air discharge | 1 |
| IEC61000-4-2 ESD contact discharge | | -30 | | 30 | KV | IEC61000-4-2 (ESD) contact discharge | 1 |
| IEC61000-4-4 EFT | | | | 15 | A | IEC61000-4-4 (EFT) | 1 |
| Reverse stand-off voltage (Pin 1、2 to Pin 3) | VRWM | | | 7 | V | Pin 1、2 to Pin 3 | 2 |
| Reverse stand-off voltage (Pin 3 to Pin 1、2) | VRWM | | | 12 | V | Pin 3 to Pin 1、2 | 2 |
| Reverse breakdown voltage (Pin 1、2 to Pin 3) | VBR | 7.5 | | | V | IT = 1 mA, Pin 1、2 to Pin 3 | 2 |
| Reverse breakdown voltage (Pin 3 to Pin 1、2) | VBR | 13.3 | | | V | IT = 1 mA, Pin 3 to Pin 1、2 | 2 |
| Reverse leakage current (Pin 1、2 to Pin 3) | IR | | | 200 | nA | VR = VRWM, Pin 1、2 to Pin 3 | 2 |
| Reverse leakage current (Pin 3 to Pin 1、2) | IR | | | 100 | nA | VR = VRWM, Pin 3 to Pin 1、2 | 2 |
| Clamping voltage (Pin 1、2 to Pin 3) | VC | | | 12 | V | IPP = 10A (8 x 20µs pulse), Pin 1、2 to Pin 3 | 2 |
| Clamping voltage (Pin 3 to Pin 1、2) | VC | | | 20 | V | IPP = 10A (8 x 20µs pulse), Pin 3 to Pin 1 、2 | 2 |
| Junction capacitance (Pin 1、2 to Pin 3) | CJ | | | 15 | pF | VR = 0V, f = 1MHz, Pin 1、2 to Pin 3 | 2 |
| Junction capacitance (Pin 3 to Pin 1、2) | CJ | | | 15 | pF | VR = 0V, f = 1MHz, Pin 3 to Pin 1、2 | 2 |
## CAD (KiCad official)
- Symbol: `HESDNC7`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `hesdnc7-etched.step` / `hesdnc7-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `hesdnc7.step` / `hesdnc7.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [HXY MOSFET datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8758128555958120448) (5 pp, sha256 `2c98ae0743fbf0c1`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/hesdnc7-datasheet.pdf)