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HESDNC7

HXY MOSFET · ESD And Surge Protection (TVS/ESD) · SOT-23

HESDNC7 from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 1 passive One terminal of the bidirectional ESD protection diode pair (tied with pin 2 in all electrical characteristics); clamping voltage is max 12 V at IPP = 10 A (8x20 µs) from pin 1/2 to pin 3, and junction capacitance is max 15 pF at 0 V, 1 MHz.
2 2 passive The second terminal of the bidirectional ESD protection diode pair (tied with pin 1 in all electrical characteristics); clamping voltage is max 12 V at IPP = 10 A (8x20 µs) from pin 1/2 to pin 3, and junction capacitance is max 15 pF at 0 V, 1 MHz.
3 3 passive Common terminal of the bidirectional protection pair, opposite pins 1 and 2; clamping voltage from pin 3 to pin 1/2 is max 20 V at IPP = 10 A (8x20 µs), and junction capacitance is max 15 pF.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOT-23
Category Circuit Protection
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Peak Pulse Power PPP 200 W tp = 8/20μs 1
Maximum lead temperature for soldering TL 260 °C during 10s 1
Storage Temperature Range Tstg -55 150 °C 1
Operating Temperature Range Top -55 125 °C 1
Maximum junction temperature Tj 150 °C 1
IEC61000-4-2 ESD air discharge -30 30 KV IEC61000-4-2 (ESD) air discharge 1
IEC61000-4-2 ESD contact discharge -30 30 KV IEC61000-4-2 (ESD) contact discharge 1
IEC61000-4-4 EFT 15 A IEC61000-4-4 (EFT) 1
Reverse stand-off voltage (Pin 1、2 to Pin 3) VRWM 7 V Pin 1、2 to Pin 3 2
Reverse stand-off voltage (Pin 3 to Pin 1、2) VRWM 12 V Pin 3 to Pin 1、2 2
Reverse breakdown voltage (Pin 1、2 to Pin 3) VBR 7.5 V IT = 1 mA, Pin 1、2 to Pin 3 2
Reverse breakdown voltage (Pin 3 to Pin 1、2) VBR 13.3 V IT = 1 mA, Pin 3 to Pin 1、2 2
Reverse leakage current (Pin 1、2 to Pin 3) IR 200 nA VR = VRWM, Pin 1、2 to Pin 3 2
Reverse leakage current (Pin 3 to Pin 1、2) IR 100 nA VR = VRWM, Pin 3 to Pin 1、2 2
Clamping voltage (Pin 1、2 to Pin 3) VC 12 V IPP = 10A (8 x 20µs pulse), Pin 1、2 to Pin 3 2
Clamping voltage (Pin 3 to Pin 1、2) VC 20 V IPP = 10A (8 x 20µs pulse), Pin 3 to Pin 1 、2 2
Junction capacitance (Pin 1、2 to Pin 3) CJ 15 pF VR = 0V, f = 1MHz, Pin 1、2 to Pin 3 2
Junction capacitance (Pin 3 to Pin 1、2) CJ 15 pF VR = 0V, f = 1MHz, Pin 3 to Pin 1、2 2

CAD (KiCad official)

  • Symbol: HESDNC7
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: hesdnc7-etched.step / hesdnc7-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hesdnc7.step / hesdnc7.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (5 pp, sha256 2c98ae0743fbf0c1, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF