# HESDM3051N2T5G

**HXY MOSFET** · Electrostatic And Surge Protection (TVS/ESD) · DFN1006-2

HESDM3051N2T5G from HXY MOSFET, in a DFN1006-2. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | 1 | passive | Bidirectional ESD protection line terminal protecting one I/O line, with 5.0 V reverse working voltage; the device is bidirectional so pins 1 and 2 are interchangeable. |
| 2 | 2 | passive | Bidirectional ESD protection line terminal (other side of the diode), with 5.0 V reverse working voltage; connect to ground or the opposite side of the protected line as the application requires. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | DFN1006-2 |
| Category | Circuit Protection |
| Pins | 2 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Tstg Storage Temperature Range | Tstg | -55 |  | 150 | °C |  | 1 |
| Tj Maximum junction temperature | Tj |  |  | 150 | °C |  | 1 |
| Maximum lead temperature for soldering | TL |  |  | 260 | °C | during 10s | 1 |
| Peak Pulse Power | PPP |  |  | 105 | μ | tp = 8/20 μs (table value; unit cell garbled, see review) | 1 |
| ESD contact discharge (IEC61000-4-2) |  | -30 |  | 30 | kV | IEC61000-4-2 contact discharge | 1 |
| ESD air discharge (IEC61000-4-2) |  | -30 |  | 30 | kV | IEC61000-4-2 air discharge | 1 |
| EFT (IEC61000-4-4) |  |  |  | 40 | A | IEC61000-4-4 (EFT) | 1 |
| Reverse Working Voltage | VRWM |  |  | 5 | V |  | 2 |
| Reverse Breakdown Voltage | VBR | 5.6 |  |  | V | IT = 1mA | 2 |
| Reverse Leakage Current |  |  |  | 0.3 | μA | VRWM = 5.0V | 2 |
| Clamping Voltage |  |  |  | 8 | V | IPP = 1A, tp = 8/20μs | 2 |
| Clamping Voltage |  |  |  | 15 | V | IPP = 8A, tp = 8/20μs | 2 |
| Junction Capacitance | CJ |  |  | 12 | pF | VR = 0V, f = 1MHz | 2 |

## CAD (KiCad official)

- Symbol: `HESDM3051N2T5G`
- Footprint: `Diode_SMD:D_SOD-882`
- 3D model: DFN1006-2 (KiCad packages3D, STEP)
- 3D model files: `hesdm3051n2t5g-etched.step` / `hesdm3051n2t5g-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `hesdm3051n2t5g.step` / `hesdm3051n2t5g.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HXY MOSFET datasheet](docs/hesdm3051n2t5g-datasheet.pdf) (4 pp, sha256 `43a28d93a4464944`, retrieved 2026-10-29, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/hesdm3051n2t5g-datasheet.pdf)