component
HESDM3051N2T5G
Public Made by Adomby adom
HXY MOSFET Electrostatic And Surge Protection (TVS/ESD), DFN1006-2. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownHESDM3051N2T5G
HXY MOSFET · Electrostatic And Surge Protection (TVS/ESD) · DFN1006-2
HESDM3051N2T5G from HXY MOSFET, in a DFN1006-2. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | 1 | passive | Bidirectional ESD protection line terminal protecting one I/O line, with 5.0 V reverse working voltage; the device is bidirectional so pins 1 and 2 are interchangeable. |
| 2 | 2 | passive | Bidirectional ESD protection line terminal (other side of the diode), with 5.0 V reverse working voltage; connect to ground or the opposite side of the protected line as the application requires. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | DFN1006-2 |
| Category | Circuit Protection |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Tstg Storage Temperature Range | Tstg | -55 | 150 | °C | 1 | ||
| Tj Maximum junction temperature | Tj | 150 | °C | 1 | |||
| Maximum lead temperature for soldering | TL | 260 | °C | during 10s | 1 | ||
| Peak Pulse Power | PPP | 105 | μ | tp = 8/20 μs (table value; unit cell garbled, see review) | 1 | ||
| ESD contact discharge (IEC61000-4-2) | -30 | 30 | kV | IEC61000-4-2 contact discharge | 1 | ||
| ESD air discharge (IEC61000-4-2) | -30 | 30 | kV | IEC61000-4-2 air discharge | 1 | ||
| EFT (IEC61000-4-4) | 40 | A | IEC61000-4-4 (EFT) | 1 | |||
| Reverse Working Voltage | VRWM | 5 | V | 2 | |||
| Reverse Breakdown Voltage | VBR | 5.6 | V | IT = 1mA | 2 | ||
| Reverse Leakage Current | 0.3 | μA | VRWM = 5.0V | 2 | |||
| Clamping Voltage | 8 | V | IPP = 1A, tp = 8/20μs | 2 | |||
| Clamping Voltage | 15 | V | IPP = 8A, tp = 8/20μs | 2 | |||
| Junction Capacitance | CJ | 12 | pF | VR = 0V, f = 1MHz | 2 |
CAD (KiCad official)
- Symbol:
HESDM3051N2T5G - Footprint:
Diode_SMD:D_SOD-882 - 3D model: DFN1006-2 (KiCad packages3D, STEP)
- 3D model files:
hesdm3051n2t5g-etched.step/hesdm3051n2t5g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hesdm3051n2t5g.step/hesdm3051n2t5g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (4 pp, sha256
43a28d93a4464944, retrieved 2026-10-29, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).