# HESDBL12VA1

**HXY MOSFET** · ESD And Surge Protection (TVS/ESD) · DFN1006-2L

HESDBL12VA1 from HXY MOSFET, in a DFN1006-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | 1 | passive | One terminal of the bi-directional ESD protection diode that clamps the protected line; the datasheet does not give a separate function or polarity for this terminal. |
| 2 | 2 | passive | The other terminal of the bi-directional ESD protection diode that clamps the protected line; the datasheet does not give a separate function or polarity for this terminal. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | DFN1006-2L |
| Category | Circuit Protection |
| Pins | 2 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Peak Pulse Power (tp = 8/20 µs) | PPP |  |  | 140 | W | tp = 8/20 µs, Tamb = 25 °C | 1 |
| Maximum lead temperature for soldering | TL |  |  | 260 | °C | during 10 s | 1 |
| Storage Temperature Range | Tstg | -55 |  | 150 | °C |  | 1 |
| Operating Temperature Range | Top | -55 |  | 150 | °C |  | 1 |
| Maximum junction temperature | Tj |  |  | 150 | °C |  | 1 |
| IEC61000-4-2 (ESD) air discharge |  | -20 |  | 20 | KV | IEC61000-4-2, air discharge | 1 |
| IEC61000-4-2 (ESD) contact discharge |  | -20 |  | 20 |  | IEC61000-4-2, contact discharge | 1 |
| Reverse working voltage | VRWM |  |  | 12 | V |  | 2 |
| Breakdown voltage (min) | VBR | 13.3 |  |  | V | IT = 1.0 mA, measured at 25 °C | 2 |
| Clamping voltage | VC |  |  | 16 | V | IPP = 8 A | 2 |
| Peak pulse current | IPP |  |  | 8 | A | 8/20 µs surge per Figure 1 | 2 |
| Peak pulse power | PPK |  |  | 100 | W | 8/20 µs surge per Figure 1 | 2 |
| Reverse leakage current | IR |  |  | 1 | A | @ VRWM | 2 |
| Capacitance | C |  | 17 |  | pF |  | 2 |

## CAD (KiCad official)

- Symbol: `HESDBL12VA1`
- Footprint: `Diode_SMD:D_SOD-882`
- 3D model: DFN1006-2L (KiCad packages3D, STEP)
- 3D model files: `hesdbl12va1-etched.step` / `hesdbl12va1-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `hesdbl12va1.step` / `hesdbl12va1.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HXY MOSFET datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8604438645877596160) (4 pp, sha256 `733ec9362fc15096`, retrieved 2026-10-16, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/hesdbl12va1-datasheet.pdf)