component

HESDBL12VA1

Public Made by Adom

by adom

HXY MOSFET ESD And Surge Protection (TVS/ESD), DFN1006-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
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HESDBL12VA1

HXY MOSFET · ESD And Surge Protection (TVS/ESD) · DFN1006-2L

HESDBL12VA1 from HXY MOSFET, in a DFN1006-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 1 passive One terminal of the bi-directional ESD protection diode that clamps the protected line; the datasheet does not give a separate function or polarity for this terminal.
2 2 passive The other terminal of the bi-directional ESD protection diode that clamps the protected line; the datasheet does not give a separate function or polarity for this terminal.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package DFN1006-2L
Category Circuit Protection
Pins 2

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Peak Pulse Power (tp = 8/20 µs) PPP 140 W tp = 8/20 µs, Tamb = 25 °C 1
Maximum lead temperature for soldering TL 260 °C during 10 s 1
Storage Temperature Range Tstg -55 150 °C 1
Operating Temperature Range Top -55 150 °C 1
Maximum junction temperature Tj 150 °C 1
IEC61000-4-2 (ESD) air discharge -20 20 KV IEC61000-4-2, air discharge 1
IEC61000-4-2 (ESD) contact discharge -20 20 IEC61000-4-2, contact discharge 1
Reverse working voltage VRWM 12 V 2
Breakdown voltage (min) VBR 13.3 V IT = 1.0 mA, measured at 25 °C 2
Clamping voltage VC 16 V IPP = 8 A 2
Peak pulse current IPP 8 A 8/20 µs surge per Figure 1 2
Peak pulse power PPK 100 W 8/20 µs surge per Figure 1 2
Reverse leakage current IR 1 A @ VRWM 2
Capacitance C 17 pF 2

CAD (KiCad official)

  • Symbol: HESDBL12VA1
  • Footprint: Diode_SMD:D_SOD-882
  • 3D model: DFN1006-2L (KiCad packages3D, STEP)
  • 3D model files: hesdbl12va1-etched.step / hesdbl12va1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hesdbl12va1.step / hesdbl12va1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (4 pp, sha256 733ec9362fc15096, retrieved 2026-10-16, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF