component
HESD7551N2T5G
Public Made by Adomby adom
HXY MOSFET Electrostatic And Surge Protection (TVS/ESD), DFN1006-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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HESD7551N2T5G
HXY MOSFET · Electrostatic And Surge Protection (TVS/ESD) · DFN1006-2L
HESD7551N2T5G from HXY MOSFET, in a DFN1006-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | 1 | passive | Bidirectional ESD protection line terminal protecting one data/control line, 3.3V reverse working voltage, ±8kV contact / ±15kV air IEC 61000-4-2. |
| 2 | 2 | passive | Second terminal of the bidirectional ESD protection diode (connect to the other side of the protected line or ground), 3.3V reverse working voltage, 0.30pF typical junction capacitance. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | DFN1006-2L |
| Category | Circuit Protection |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Reverse Breakdown Voltage | VBR | 4.2 | V | IT = 1mA | 2 | ||
| Reverse Leakage Current | IR | 100 | nA | VRWM = 3.3V | 2 | ||
| Clamping Voltage | VC | 12 | V | IPP = 1A, tp = 8/20μs | 2 | ||
| Clamping Voltage | VC | 25 | V | IPP = 4A, tp = 8/20μs | 2 | ||
| Junction Capacitance | CJ | 0.3 | 0.45 | pF | VR = 0V, f = 1MHz | 2 | |
| Reverse Working Voltage | VRWM | 3.3 | V | 2 | |||
| Peak Pulse Power | PPP | 100 | W | tp = 8/20μs | 1 | ||
| Maximum lead temperature for soldering | TL | 260 | °C | during 10s | 1 | ||
| Storage Temperature Range | Tstg | -55 | 150 | °C | 1 | ||
| Operating Temperature Range | Top | -55 | 150 | °C | 1 | ||
| Maximum junction temperature | Tj | 150 | °C | 1 | |||
| IEC61000-4-2 ESD air discharge | -15 | 15 | kV | air discharge | 1 | ||
| IEC61000-4-2 ESD contact discharge | -8 | 8 | kV | contact discharge | 1 | ||
| IEC61000-4-4 EFT | 40 | A | 5/50 ns | 1 |
CAD (KiCad official)
- Symbol:
HESD7551N2T5G - Footprint:
Diode_SMD:D_SOD-882 - 3D model: DFN1006-2L (KiCad packages3D, STEP)
- 3D model files:
hesd7551n2t5g-etched.step/hesd7551n2t5g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hesd7551n2t5g.step/hesd7551n2t5g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (5 pp, sha256
41941385b914e4c0, retrieved 2026-10-26, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# HESD7551N2T5G
**HXY MOSFET** · Electrostatic And Surge Protection (TVS/ESD) · DFN1006-2L
HESD7551N2T5G from HXY MOSFET, in a DFN1006-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | 1 | passive | Bidirectional ESD protection line terminal protecting one data/control line, 3.3V reverse working voltage, ±8kV contact / ±15kV air IEC 61000-4-2. |
| 2 | 2 | passive | Second terminal of the bidirectional ESD protection diode (connect to the other side of the protected line or ground), 3.3V reverse working voltage, 0.30pF typical junction capacitance. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | DFN1006-2L |
| Category | Circuit Protection |
| Pins | 2 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Reverse Breakdown Voltage | VBR | 4.2 | | | V | IT = 1mA | 2 |
| Reverse Leakage Current | IR | | | 100 | nA | VRWM = 3.3V | 2 |
| Clamping Voltage | VC | | | 12 | V | IPP = 1A, tp = 8/20μs | 2 |
| Clamping Voltage | VC | | | 25 | V | IPP = 4A, tp = 8/20μs | 2 |
| Junction Capacitance | CJ | | 0.3 | 0.45 | pF | VR = 0V, f = 1MHz | 2 |
| Reverse Working Voltage | VRWM | | | 3.3 | V | | 2 |
| Peak Pulse Power | PPP | | | 100 | W | tp = 8/20μs | 1 |
| Maximum lead temperature for soldering | TL | | | 260 | °C | during 10s | 1 |
| Storage Temperature Range | Tstg | -55 | | 150 | °C | | 1 |
| Operating Temperature Range | Top | -55 | | 150 | °C | | 1 |
| Maximum junction temperature | Tj | | | 150 | °C | | 1 |
| IEC61000-4-2 ESD air discharge | | -15 | | 15 | kV | air discharge | 1 |
| IEC61000-4-2 ESD contact discharge | | -8 | | 8 | kV | contact discharge | 1 |
| IEC61000-4-4 EFT | | | | 40 | A | 5/50 ns | 1 |
## CAD (KiCad official)
- Symbol: `HESD7551N2T5G`
- Footprint: `Diode_SMD:D_SOD-882`
- 3D model: DFN1006-2L (KiCad packages3D, STEP)
- 3D model files: `hesd7551n2t5g-etched.step` / `hesd7551n2t5g-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `hesd7551n2t5g.step` / `hesd7551n2t5g.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [HXY MOSFET datasheet](docs/hesd7551n2t5g-datasheet.pdf) (5 pp, sha256 `41941385b914e4c0`, retrieved 2026-10-26, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/hesd7551n2t5g-datasheet.pdf)