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HESD7551N2T5G

Public Made by Adom

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HXY MOSFET Electrostatic And Surge Protection (TVS/ESD), DFN1006-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
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docs Publish 0.1.0 · Ray 14d ago
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hesd7551n2t5g-etched.glb Publish 0.1.0 · Ray 14d ago
hesd7551n2t5g-etched.step hesd7551n2t5g: factory component page (tier=lcsc) · Ray 14d ago
hesd7551n2t5g-hero.glb hesd7551n2t5g: hero GLB from the etched model (keeps the MPN mark) · Ray 14d ago
hesd7551n2t5g-hero.overlay.json Publish 0.1.0 · Ray 14d ago
hesd7551n2t5g.glb Publish 0.1.0 · Ray 14d ago
hesd7551n2t5g.kicad_mod Publish 0.1.0 · Ray 14d ago
hesd7551n2t5g.kicad_sym hesd7551n2t5g: symbol repaired (bidirectional TVS (the page says so)) · Ray 5d ago
hesd7551n2t5g.lbr hesd7551n2t5g: symbol repaired (bidirectional TVS (the page says so)) · Ray 5d ago
hesd7551n2t5g.step Publish 0.1.0 · Ray 14d ago
package.json Publish 0.1.0 · Ray 14d ago
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README.md Publish 0.1.0 · Ray 14d ago

HESD7551N2T5G

HXY MOSFET · Electrostatic And Surge Protection (TVS/ESD) · DFN1006-2L

HESD7551N2T5G from HXY MOSFET, in a DFN1006-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 1 passive Bidirectional ESD protection line terminal protecting one data/control line, 3.3V reverse working voltage, ±8kV contact / ±15kV air IEC 61000-4-2.
2 2 passive Second terminal of the bidirectional ESD protection diode (connect to the other side of the protected line or ground), 3.3V reverse working voltage, 0.30pF typical junction capacitance.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package DFN1006-2L
Category Circuit Protection
Pins 2

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Reverse Breakdown Voltage VBR 4.2 V IT = 1mA 2
Reverse Leakage Current IR 100 nA VRWM = 3.3V 2
Clamping Voltage VC 12 V IPP = 1A, tp = 8/20μs 2
Clamping Voltage VC 25 V IPP = 4A, tp = 8/20μs 2
Junction Capacitance CJ 0.3 0.45 pF VR = 0V, f = 1MHz 2
Reverse Working Voltage VRWM 3.3 V 2
Peak Pulse Power PPP 100 W tp = 8/20μs 1
Maximum lead temperature for soldering TL 260 °C during 10s 1
Storage Temperature Range Tstg -55 150 °C 1
Operating Temperature Range Top -55 150 °C 1
Maximum junction temperature Tj 150 °C 1
IEC61000-4-2 ESD air discharge -15 15 kV air discharge 1
IEC61000-4-2 ESD contact discharge -8 8 kV contact discharge 1
IEC61000-4-4 EFT 40 A 5/50 ns 1

CAD (KiCad official)

  • Symbol: HESD7551N2T5G
  • Footprint: Diode_SMD:D_SOD-882
  • 3D model: DFN1006-2L (KiCad packages3D, STEP)
  • 3D model files: hesd7551n2t5g-etched.step / hesd7551n2t5g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hesd7551n2t5g.step / hesd7551n2t5g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (5 pp, sha256 41941385b914e4c0, retrieved 2026-10-26, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF