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HE8550G-E-AE3-R

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UTC Unisonic Tech Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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HE8550G-E-AE3-R

UTC Unisonic Tech · Bipolar (BJT) · SOT-23

HE8550G-E-AE3-R from UTC Unisonic Tech, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base terminal of the PNP transistor (pin assignment B on the SOT-23 variant, per the ordering table); the datasheet gives no pin-specific electrical limit for the base, and the device ratings are VEBO -6 V and VCBO -40 V.
2 E passive Emitter terminal of the PNP transistor (pin assignment E on the SOT-23 variant, per the ordering table); the datasheet gives no pin-specific electrical limit for the emitter, and the device rating is VEBO -6 V.
3 C passive Collector terminal of the PNP transistor (pin assignment C on the SOT-23 variant, per the ordering table); the device is rated for collector current IC -1.5 A, VCEO -25 V, and total collector dissipation 350 mW in SOT-23.

Key specifications

Parameter Value
Manufacturer UTC Unisonic Tech
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Base Breakdown Voltage BVCBO -40 V IC=-100μA, IE=0 2
Collector-Emitter Breakdown Voltage BVCEO -25 V IC=-2mA, IB=0 2
Emitter-Base Breakdown Voltage BVEBO -6 V IE=-100μA, IC=0 2
Collector Cut-Off Current ICBO -100 nA VCB=-35V, IE=0 2
Emitter Cut-Off Current IEBO -100 nA VEB=-6V, IC=0 2
DC Current Gain hFE1 45 170 VCE=-1V, IC=-5mA 2
DC Current Gain hFE2 85 160 500 VCE=-1V, IC=-100mA 2
DC Current Gain hFE3 40 80 VCE=-1V, IC=-800mA 2
DC Current Gain hFE2 rank E range (classification table) hFE2 250 500 2
Collector-Emitter Saturation Voltage VCE(SAT) -0.28 -0.5 V IC=-800mA, IB=-80mA 2
Base-Emitter Saturation Voltage VBE(SAT) -0.98 -1.2 V IC=-800mA, IB=-80mA 2
Base-Emitter Voltage VBE -0.66 -1 V VCE=-1V,IC=-10mA 2
Current Gain Bandwidth Product fT 100 190 MHz VCE=-10V,IC=-50mA 2
Output Capacitance Cob 9 pF VCB=-10V, IE=0 f=1MHz 2
Collector Dissipation (SOT-23 package) PC 350 mW SOT-23 package 2
Collector-Base Voltage VCBO -40 V 2
Collector-Emitter Voltage VCEO -25 V 2
Emitter-Base Voltage VEBO -6 V 2
Collector Current IC -1.5 A 2
Junction Temperature TJ 150 C 2
Storage Temperature TSTG -65 150 C 2

CAD (KiCad official)

  • Symbol: HE8550G-E-AE3-R
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: he8550g-e-ae3-r-etched.step / he8550g-e-ae3-r-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); he8550g-e-ae3-r.step / he8550g-e-ae3-r.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UTC Unisonic Tech datasheet (4 pp, sha256 d49dcb27a4d69e2d, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF